K.W. Benz

University of Freiburg

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M. Fiederle

University of Freiburg

P. Dold

Tohoku University

Wolfgang Neumann

Urbana University

C. Eiche

University of Freiburg

D. Ebling

Hochschule Düsseldorf University of Applied Sciences

R. Schwarz

Instituto Superior Técnico

A. Cröll

University of Alabama in Huntsville

V. Babentsov

V.E. Lashkaryov Institute of Semiconductor Physics

W. Joerger

University of Freiburg

M. Salk

Fraunhofer Institute for High-Speed Dynamics, Ernst-Mach-Institut

Cooperative Institutions

University of Freiburg

University of Stuttgart

Internationale Akademie Berlin

Technical University of Munich

Charles University

Humboldt-Universität zu Berlin

Technische Universität Berlin

Fraunhofer Institute for Applied Solid State Physics

Innovations for High Performance Microelectronics

Max Planck Institute for Solid State Research

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Ytterbium-doped InP light-emitting diode at 1.0 μm

Applied Physics Letters (1985)

W.H. Haydl H. Müller H. Ennen W. Körber K.W. Benz

Light-emitting pn junction diodes have been realized in ytterbium-doped InP. The p-type epitaxial layers, which contained the dopant ytterbium (Yb), were grown by liquid phase epitaxy on (100) oriented n+-type InP substrates. Ohmic contacts were alloyed, and the diodes biased in forward direction. At 77 K, emissions were observed at 1.38 eV (0.90 μm) and 1.24 eV (1.00 μm) due to near band-edge electron hole recombination and transitions between the spin-orbit levels 2F5/2→2F7/2 of Yb3+(4f13), respectively. The dependence of the electroluminescence intensity with applied voltage is presented. The external quantum efficiency was determined to be 8×10−4 at 77 K.

Ytterbium

Ohmic contact

Quantum Efficiency

10.1063/1.95869

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Citations (67)

Rare earth ions in LPE III-V semiconductors

Journal of Crystal Growth (1986)

W. Körber J. Weber A. Hangleiter K.W. Benz H. Ennen

Supercooling

10.1016/0022-0248(86)90548-8

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Citations (66)

White beam X-ray topography at the synchrotron light source ANKA, Research Centre Karlsruhe

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2003)

A.N. Danilewsky R. Simon A. Fauler M. Fiederle K.W. Benz

Reflection

10.1016/s0168-583x(02)01401-5

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Citations (42)

Preparation of Semi‐insulating CdTe Doped with Group IV Elements by Post Growth Annealing.

ChemInform (2003)

Ivan Turkevych R. Grill J. Franc Pavel Hoeschl E. Belas

Abstract For Abstract see ChemInform Abstract in Full Text.

Cadmium telluride photovoltaics

10.1002/chin.200330015

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Citations (1)

Masthead

Crystal Research and Technology (1992)

W Kleber Hugo Neels Leipzig Bohm J. Heydenreich Halle Paufler

10.1002/crat.2170270801

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Citations (0)

Characterization of bulk Cu0.85In1.05Se2 by photoluminescence and cathodoluminescence

Journal of Crystal Growth (1998)

M. D. Lampert Bertrand Meyer M. Hornung K.W. Benz A. Petersson

Cathodoluminescence

Crystal (programming language)

Acceptor

Stoichiometry

10.1016/s0022-0248(97)00352-7

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Citations (6)

1. Was sind Kristalle?

De Gruyter eBooks (2018)

Wolfgang Neumann K.W. Benz

10.1515/9783110439076-005

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Isoelectronic impurity states in direct-gap III-V compounds: The case of InP: Bi

Physical review. B, Condensed matter (1978)

W. W. Rühle W. Schmid R. Meck N. Stath J. U. Fischbach

The isoelectronic impurity Bi in the direct-gap III-V compound InP is studied by emission and absorption spectroscopy including magnetic-field, time-resolved, temperature- and excitation-dependent measurements. Doping with Bi gives rise to two emission lines, a sharp Bi "bound exciton" (Bi, $X$) and a broader $(\mathrm{Bi}, X)\ensuremath{-}(\mathrm{Bi}, X)$ bound-excitonic molecule. The hole of the bound Bi-exciton is extremely localized while the electron has a typical donorlike Bohr radius. Therefore the ${\mathrm{Bi}}^{+}$ behaves like a pseudodonor, in particular, in magnetoluminescence experiments. The $(\mathrm{Bi}, X)\ensuremath{-}(\mathrm{Bi}, X)$ bound-excitonic molecules resemble an ${\mathrm{H}}_{2}$-like "pseudodonor molecule." This new type of isoelectronic complex is investigated and discussed in detail.

Bohr radius

10.1103/physrevb.18.7022

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Citations (40)

Determination of the EL2 introduction rate and Fermi-level shift due to proton and pion irradiation in semi-insulating GaAs

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (1998)

M. Rogalla M. Battke Nick Duda R. Geppert R. Göppert

10.1016/s0168-583x(98)80033-5

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Citations (7)

Simulation of Industrial Crystal Growth by the Vertical Bridgman Method

Springer eBooks (2003)

Gerhard Dziuk Stefan Boschert Alfred Schmidt Kunibert G. Siebert Eberhard Bänsch

10.1007/978-3-642-55753-8_26

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Citations (11)