B. N. Dev

Indian Institute of Technology Kharagpur

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

P.V. Satyam

Institute of Physics, Bhubaneshwar

Biswarup Satpati

Saha Institute of Nuclear Physics

Anupam Roy

Birla Institute of Technology, Mesra

G. Kuri

Paul Scherrer Institute

D. P. Mahapatra

University of Engineering & Management

R. Batabyal

UGC DAE Consortium for Scientific Research

B. Sundaravel

Indira Gandhi Centre for Atomic Research

J. C. Mahato

Visva-Bharati University

S. Roy

University of Delhi

A. K. Bhattacharjee

R. G. Kar Medical College and Hospital

Cooperative Institutions

Institute of Physics, Bhubaneshwar

Bhabha Atomic Research Centre

Indian Association for the Cultivation of Science

Homi Bhabha National Institute

Saha Institute of Nuclear Physics

Indian Institute of Science Bangalore

Inter-University Accelerator Centre

Indian Institute of Technology Kharagpur

Bhabha Atomic Research Center Hospital

Tata Institute of Fundamental Research

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

X-ray standing wave and reflectometric characterization of multilayer structures

Physical review. B, Condensed matter (2001)

Sanjit Ghose B. N. Dev

A microstructural characterization of synthetic periodic multilayers by x-ray standing waves is presented. It is shown that the analysis of multilayers by combined x-ray reflectometry (XRR) and x-ray standing-wave (XSW) techniques can overcome the deficiencies of the individual techniques in microstructural analysis. While interface roughnesses are more accurately determined by the XRR technique, the layer composition is more accurately determined by the XSW technique, where an element is directly identified by its characteristic emission. These aspects are explained with an example of a 20-period Pt/C multilayer. The composition of the C layers due to Pt dissolution in the C layers, ${\mathrm{Pt}}_{x}{\mathrm{C}}_{1\ensuremath{-}x},$ is determined by the XSW technique. In the XSW analysis, when the entire amount of Pt present in the C layers is assumed to be within the broadened interface, this leads to larger interface roughness values, inconsistent with those determined by the XRR technique. Constraining the interface roughness values to those determined by the XRR technique requires an additional amount of dissolved Pt in the C layers to explain the Pt fluorescence yield excited by the standing-wave field. This analysis provides the average composition ${\mathrm{Pt}}_{x}{\mathrm{C}}_{1\ensuremath{-}x}$ of the C layers.

X-ray reflectivity

Reflectometry

Standing wave

Characterization

10.1103/physrevb.63.245409

Cite

Citations (71)

Characterization of a liquid-phase-epitaxy-grown Al0.2Ga0.8As film on a GaAs (111) substrate by RBS, channeling and PIGE analyses

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (1998)

G. Kuri P.V. Satyam B. Sundaravel Karuppanan Sekar D. P. Mahapatra

Rutherford backscattering spectrometry

Liquid phase

10.1016/s0168-583x(98)00111-6

Cite

Citations (0)

Development of an ion micro-beam facility at Institute of Physics, Bhubaneswar

Bibhudutta Rout Sanjit Ghose D. P. Mahapatra B. N. Dev H. Bakhru

Source

Cite

Citations (0)

Role of Pb for Ag growth on H-passivated Si(1 0 0) surfaces

Applied Surface Science (2005)

S. Mathew Biswarup Satpati Boby Joseph B. N. Dev

10.1016/j.apsusc.2004.11.028

Cite

Citations (5)

LAYERED SYNTHETIC MICROSTRUCTURES: IMPORTANCE OF A COMBINED X-RAY STANDING WAVE AND X-RAY REFLECTIVITY ANALYSIS

B. N. Dev

X-ray reflectivity

Standing wave

10.1142/9789812704221_0011

Cite

Citations (1)

Experimental and theoretical investigation of chemisorbed Ga on Si(111)

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1988)

Thomas Thundat S. M. Mohapatra B. N. Dev W. M. Gibson T. P. Das

Study of the lattice location of Ga adsorbed from weakly acidic methanol solution on chemically cleaned Si(111) surfaces has been carried out by an x-ray standing wave (XSW) technique using a conventional Mo Kα x-ray source. XSW is a very sensitive and precise technique to determine impurity atom locations normal to the diffraction planes. In addition to measurements of adatom locations normal to the crystal surface plane, the atom locations relative to planes inclined to the surface were measured. Self-consistent field Hartree–Fock cluster investigations were carried out for Ga on Si(111) surfaces for different high-symmetry adsorption sites such as substitutional, atop, threefold open, and threefold eclipsed to determine the minimum energy positions. The effect of lattice relaxation was studied for the eclipsed site alone. Analyzing the XSW results together with the bond lengths and binding energies derived from cluster calculations indicates that Ga coadsorbs at the atop and threefold relaxed eclipse sites. Also it is shown that the ultraviolet photoemission spectra for these two sites obtained from cluster calculation explain satisfactorily the observed spectrum for Ga adsorbed on Si(111).

Chemisorption

Lattice (music)

Crystal (programming language)

10.1116/1.575152

Cite

Citations (25)

Summary Abstract: An x-ray standing wave interference spectrometric (XSWIS) analysis of bromine adsorbed on cleaved silicon from solution

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (1985)

B. N. Dev V. Yu. Aristov N. Hertel Thomas Thundat W. M. Gibson

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation B. N. Dev, V. Aristov, N. Hertel, T. Thundat, W. M. Gibson; Summary Abstract: An x‐ray standing wave interference spectrometric (XSWIS) analysis of bromine adsorbed on cleaved silicon from solution. J. Vac. Sci. Technol. A 1 May 1985; 3 (3): 975. https://doi.org/10.1116/1.573366 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search

10.1116/1.573366

Cite

Citations (4)

High density nonmagnetic cobalt in thin films

Nanotechnology (2018)

Nasrin Banu Surendra Singh S. Basu Anupam Roy Hema C. P. Movva

Recently high density (HD) nonmagnetic cobalt has been discovered in a nanoscale cobalt thin film, grown on Si(111) single crystal. This form of cobalt is not only nonmagnetic but also superconducting. These promising results have encouraged further investigations of the growth of the nonmagnetic (NM) phase of cobalt. In the original investigation, the cobalt film had a natural cobalt oxide at the top. We have investigated whether the growth of HD NM cobalt layers in the thin film depends on (i) a capping layer on the cobalt film, (ii) the thickness of the cobalt film and (iii) the nature of the substrate on which the cobalt film is grown. The results of such investigations indicate that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are formed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not formed. The difference is attributed to the nature-crystalline or amorphous-of the substrate.

Cobalt oxide

10.1088/1361-6528/aab0e9

Cite

Citations (8)

Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic–nonmagnetic multistrip patterning by focused ion beam

Indian Journal of Physics (2017)

B. N. Dev Nasrin Banu J. Faßbender J. Grenzer N. Schell

Rutherford backscattering spectrometry

Magneto-optic Kerr effect

Patterned media

10.1007/s12648-017-1025-z

Cite