In the present study, radionuclide and radon concentrations were measured in drinking water samples collected in Andon springs and Rize Andon Drinking Water Treatment Facility located at Rize province in Eastern Black Sea Region in Turkey and radionuclide concentrations were measured in soil samples collected in the same regions. Radionuclide activity concentrations in soil and drinking water samples were measured with gamma ray spectrometry, and 238U, 232Th, 40K and 137C activity concentrations were determined. Annual effective dose equivalents were calculated based on the measured results. Radon concentration measurements for the drinking water samples collected in the region were conducted with a radon gas analyzer (Alpha Guard PQ 2000PRQ). All measured radon gas levels and radionuclide values were found to be among the limit values recommended by international organizations.
Cu(In,Ga)Te2 (CIGT) thin films doped with Na were grown using a two-stage technique. During the first stage of the process precursor layers were formed over Mo coated stainless steel foil substrates by electrodeposition of Cu, In and Ga and evaporation of a NaF film as a dopant and Te. During the second stage, the foil/Mo/(Cu, In, Ga)/NaF/Te stacks were reacted by rapid thermal processing. The ramp rate to the reaction temperature of 600 °C was changed between 0.5 and 10 °C s−1. Resulting compound layers were analyzed to evaluate the effect of the temperature ramp rate on film quality. It was found that a secondary phase of InTe that was detected in films reacted at ramp rates of 0.5–5 °C s−1 was not present for the films reacted at a ramp rate of 10 °C s−1. Film morphology of the fast ramp rate sample showed improved crystallinity and grain size, which was superior compared to others. Gallium gradation was detected through all the layers irrespective of the temperature ramp rate, surface of the films being more In-rich.
In this study, the effect of post-annealing temperature in CdS thin films grown on ZnO seed layer was investigated. CdS thin film and ZnO seed layer were coated by chemical bath deposition method and solution dropping technique, respectively. The structure of the post-annealed samples at 350°C and 400°C consisted of cubic CdS and CdSO3 oxide phases. As a result of recrystallization at 450°C, both hexagonal CdS and cubic CdO phases were formed. While the absorption edge was observed at around 500 nm in all samples, the best transmittance was observed in the sample annealed at 400°C. PL spectra proved the existence of defect types such as deep emission, sulfur vacancy for all samples. Ellipsometer measurements showed that the highest refractive index was in the sample annealed at 400°C. Among the samples, it was concluded that the most suitable window structure for CdTe solar cell applications is CdS thin film post-annealed at 400°C.
'%3e%3cpath fill='%23012169' d='M0 0v30h60V0z'/%3e%3cpath stroke='%23fff' stroke-width='6' d='m0 0 60 30m0-30L0 30'/%3e%3cpath stroke='%23C8102E' stroke-width='4' d='m0 0 60 30m0-30L0 30' clip-path='url(%23b)'/%3e%3cpath stroke='%23fff' stroke-width='10' d='M30 0v30M0 15h60'/%3e%3cpath stroke='%23C8102E' stroke-width='6' d='M30 0v30M0 15h60'/%3e%3c/g%3e%3c/svg%3e)