Joaquim Puigdollers

Universitat Politècnica de Catalunya

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C. Voz

Universitat Politècnica de Catalunya

126

R. Alcubilla

Universitat Politècnica de Catalunya

Isidro Martín

Universitat Politècnica de Catalunya

A. Orpella

Universitat Politècnica de Catalunya

J. Bertomeu

Universitat de Barcelona

Pablo Ortega

Universitat Politècnica de Catalunya

J. Andreu

Universitat de Barcelona

Edgardo Saucedo

Universitat Politècnica de Catalunya

Eloi Ros

Universitat Politècnica de Catalunya

J.M. Asensi

Universitat de Barcelona

Cooperative Institutions

Universitat Politècnica de Catalunya

Universitat de Barcelona

FC Barcelona

Institut de Recerca en Energia de Catalunya

Institut de Ciència de Materials de Barcelona

Centre National de la Recherche Scientifique

Universitat Autònoma de Barcelona

Universidad Complutense de Madrid

Universidad Rovira i Virgili

Consejo Superior de Investigaciones Científicas

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Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200 °C

Thin Solid Films (2007)

D. Muñoz C. Voz Isidro Martín A. Orpella Joaquim Puigdollers

10.1016/j.tsf.2007.06.192

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Citations (15)

Organic electronic devices: overview and future trends

Joaquim Puigdollers C. Voz Isidro Martín A. Orpella Michael Vetter

Organic electronic devices have lately attracted much attention as viable alternatives to inorganic ones. Neither high temperature steps nor expensive deposition equipments are required to fabricate competitive organic devices. Low cost, lightness and flexibility are some of the advantages in these novel devices. This paper briefly reviews some successful results on this new research area, particularly on organic thin film transistors and solar cells.

Organic Electronics

10.1109/sced.2005.1504292

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Citations (3)

Interdigitated back-contacted crystalline silicon solar cells fully manufactured with atomic layer deposited selective contacts

Solar Energy Materials and Solar Cells (2022)

Ivan Masmitjà Rusiñol Eloi Ros Rosa Almache-Hernández Benjamín Pusay Isidro Martín

The interdigitated back-contacted (IBC) solar cell concept has been extensively studied for single-junction cells and more recently as a good choice for three-terminal tandem devices. In this work, carrier-selective contacts based on transition metal oxides deposited by atomic layer deposition (ALD) technique are applied to IBC c-Si(n) devices. In the first part of the study, we develop a hole-selective contact based on thin ALD vanadium oxide (V2O5) layers without using an amorphous silicon interlayer. The ALD process has been optimised, i.e. number of ALD cycles and deposition temperature, as a trade-off between surface passivation and contact resistivity. Noticeable surface passivation with recombination current densities around 100 fA/cm2, as well as reasonable contact resistivity values below 250 mΩcm2 are reached using 200 ALD V2O5 cycles deposited at a deposition temperature of 125 °C (∼10 nm layer thickness). The optimised ALD V2O5-based contact is combined with both an ALD TiO2-based electron-selective contact and an excellent surface passivation in non-contacted regions provided by ALD Al2O3 films, to form a fully ALD IBC c-Si(n) solar cell scheme. Fabricated devices yield photovoltaic efficiencies and pseudo efficiencies, i.e. calculated without series resistance losses, of 18.6% and 21.1% respectively (3 cm × 3 cm device area). These results reveal the potential of the ALD technique to deposit transition metal oxide (TMO) films as selective contacts on high efficiency devices, paving the way of using low thermal-budget, low cost and highly scalable processes for a highly demanding IBC solar cell architecture in the photovoltaic industry.

Passivation

Contact resistance

Vanadium Oxide

10.1016/j.solmat.2022.111731

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Citations (12)

Effects of Pentacene Active Film Thickness on the Threshold Voltage of Pentacene Thin Film Transistors

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2006)

Rodolfo García Benjamin Iiguez M. Jamal Deen Joaquim Puigdollers C. Voz

Abstract not Available.

Pentacene

10.1149/ma2006-02/33/1595

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Citations (0)

On the determination of the interface density of states in aSi:H/aSi1−XCX:H multilayers

Journal of Non-Crystalline Solids (1993)

J. Bertomeu Joaquim Puigdollers J.M. Asensi J. Andreu

Interface (matter)

Density of states

10.1016/0022-3093(93)91133-n

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Citations (1)

Effect of the thickness of amorphous silicon carbide interlayer on the passivation of c-Ge surface by aluminium oxide films

Surfaces and Interfaces (2022)

Isidro Martín Gema López M. Garín C. Voz Pablo Ortega

Passivation

Aluminium oxides

Nanometre

10.1016/j.surfin.2022.102070

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Citations (13)

Infrared characterization of interfaces

Applied Surface Science (1997)

J. Bertomeu Joaquim Puigdollers J.M. Asensi J. Andreu

Characterization

Deposition

Porous Silicon

10.1016/s0169-4332(96)00600-9

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Citations (0)

Fully atomic layer deposited transparent carrier-selective contacts for bifacial Cd-free Cu2ZnSnSe4 thin-film solar cells

Materialia (2024)

Rosa Almache-Hernández Ivan Masmitjà Rusiñol Benjamín Pusay Eloi Ros Kunal J. Tiwari

Free carrier

10.1016/j.mtla.2024.102169

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Citations (1)

Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

Applied Physics Letters (2004)

Isidro Martín Michael Vetter A. Orpella C. Voz Joaquim Puigdollers

A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H) deposition, without breaking the vacuum. We measured effective lifetime, τeff, through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. Seff values lower than 19 cm s−1 were achieved using a hydrogen plasma treatment and an a-SiCx:H film deposited at 300 °C.

Passivation

Deposition

Carrier lifetime

10.1063/1.1647702

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Citations (37)

Origin of the Negative Differential Resistance in the Output Characteristics of a Picene-Based Thin-Film Transistor

IEEE Journal of the Electron Devices Society (2020)

Eloi Ros Joaquim Puigdollers Pablo Ortega C. Voz

In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm ² /V·s) and on/off ratios above 10 ⁵ , the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.

10.1109/jeds.2020.2965213

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Citations (1)