J. Frazer

National Research Council Canada

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K. S. Jones

University of Florida

Mark E. Law

University of Florida

Susan Earles

Florida Institute of Technology

Antonio F. Saavedra

University of Florida

Ibrahim Avci

Synopsys (United States)

E.C. Jones

University of Florida

P. B. Kosel

University of Cincinnati

D. J. Lockwood

National Research Council Canada

Steven B. Fairchild

Wright-Patterson Air Force Base

M. Cahay

University of Cincinnati

Cooperative Institutions

University of Florida

University of Cincinnati

United States Naval Research Laboratory

Wright-Patterson Air Force Base

United States Air Force Research Laboratory

Institute for Microstructural Sciences

University of Cambridge

DexMat (United States)

Varian Medical Systems (United States)

Aarhus University

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The Effect of Ge Content in MBE Si_(1-x) Ge_(x) on the Evolution of {311} Defects

MRS Proceedings (2002)

Robert Crosby J. Frazer K. S. Jones M. E. Law A. Nylandsted Larsen

Content (measure theory)

10.1557/proc-717-c1.6

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Citations (1)

Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing

Susan Earles Mark E. Law K. S. Jones J. Frazer S. Talwar

Nonmelt laser annealing (NLA) is used to form heavily-doped, ultra-shallow regions in boron implanted crystalline silicon. Results are compared to samples receiving a conventional 1050degC spike anneal. A high-dose non-amorphizing boron implant of 10 ¹⁵ ions/cm ² at 500 eV is used. The implant is laser annealed with between one and 1000 20 ns long pulses or a 1050degC spike anneal. NLA alone produces junction depths from 21 to 25 nm with sheet resistances around 800 W/sq, while spike annealing results in 40 nm junctions at ~ 2400 W/sq. Hall effect measurements produce mobilities around 30 cm ² /V-s. Plan-view TEM shows damage from the implant is completely removed after 100 pulses. Thus, nonmelt laser annealing alone can be used to produce shallower junctions with lower resistivity than conventional RTA offering junction characteristics suitable for the 2007 65 nm ITRS technology node

p–n junction

10.1109/rtp.2004.1441951

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Influence of the surface Si/buried oxide interface on extended defect evolution in silicon-on-insulator scaled to 300 Å

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (2002)

Antonio F. Saavedra J. Frazer K. S. Jones Ibrahim Avci Susan Earles

As device dimensions continue to be scaled, incorporation of silicon-on-insulator (SOI) as mainstream complementary metal–oxide–semiconductor technology also increases. This experiment set out to further investigate the effect of the surface Si/buried oxide (BOX) interface on the formation and dissolution of extended defects in SOI. UNIBOND® wafers were thinned to 300, 700, and 1600 Å. Si+ ion implantation was performed from 5 to 40 keV with a constant, nonamorphizing dose of 2×1014 cm−2. Inert ambient furnace anneals were performed at 750 °C for times of 5 min up to 8 h. Transmission electron microscopy was used to study the evolution of extended defects, as well as to quantify the number of trapped interstitials. It is observed that the surface Si/BOX interface does not enhance the dissolution rate of extended defects unless ⩾15% of the dose is truncated by the BOX. Further, no reduction in the trapped interstitial concentration is seen unless ⩾6% of the dose is truncated. It is concluded that the surface Si/BOX interface does not serve as a significant sink for interstitial recombination, as long as the interstitial profile is mostly confined to the surface Si layer.

10.1116/1.1517410

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Citations (11)

Silicon Self-Interstitial Cluster Formation and Dissolution in SOI

MRS Proceedings (2002)

Antonio F. Saavedra J. Frazer D. Wrigley K. S. Jones Ibrahim Avci

10.1557/proc-717-c2.5

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Citations (3)

Fabrication of a new cold cathode based on pulsed laser deposition of lanthanum monosulfide thin films

2006 Sixth IEEE Conference on Nanotechnology (2006)

M. Samiee K. Garre M. Cahay P. B. Kosel Steven B. Fairchild

Field emission properties of lanthanum monosulfide (LaS) thin films deposited by pulsed laser deposition (PLD) have been measured by building an array of new cold cathodes based on MEMS technology. The new cold cathode array has been fabricated by a sequence of steps on two separate

Pulsed Laser Deposition

Lanthanum

Deposition

Cold cathode

10.1109/nano.2006.247697

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