S. Balakumar

Institute of Microelectronics

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D.Z. Chi

Institute of Materials Research and Engineering

S.J. Lee

National University of Singapore

Rui Li

Northwest A&F University

Chih-Hang Tung

Taiwan Semiconductor Manufacturing Company (Taiwan)

Fei Gao

Zhejiang University

Cooperative Institutions

Institute of Materials Research and Engineering

National University of Singapore

Northwest A&F University

Institute of Biophysics

Wuxi Taihu Hospital

University of Pittsburgh

Hebei University of Chinese Medicine

Chongqing University

Nanjing Agricultural University

Hefei University of Technology

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Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gate dielectric and TaN gate electrode

International Workshop on Junction Technology (2006)

Fei Gao Rui Li D.Z. Chi S. Balakumar Chih-Hang Tung

We report thin SGOI (silicon germanium on insulator) with 65% Ge concentration p-MOSFET (metal-oxide-semiconductor-field-effect-transistor) using Ni-germanosilicide Schottky S/D (source/drain) and HfO ₂ /TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET

Metal gate

Leakage (economics)

High-κ dielectric

10.1109/iwjt.2006.1669470

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