C. A. Payling

University of Nottingham

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L. Eaves

University of Nottingham

E.S. Alves

Universidade Federal de Minas Gerais

M.A. Pate

Huawei Technologies (United Kingdom)

O. H. Hughes

University of Nottingham

M. Henini

University of Nottingham

M. L. Leadbeater

Ubisoft (Canada)

G. A. Toombs

University of Windsor

J.C. Portal

Centre National de la Recherche Scientifique

F. W. Sheard

University of Nottingham

P.E. Simmonds

University of Wollongong

Cooperative Institutions

University of Nottingham

Centre National de la Recherche Scientifique

University of Sheffield

Laboratoire National des Champs Magnétiques Intenses

Imperial College London

Engineering and Physical Sciences Research Council

Max Planck Society

Worcestershire Royal Hospital

Institut National des Sciences Appliquées de Toulouse

University of Cambridge

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Sequential tunneling due to intersubband scattering in double‐barrier resonant tunneling devices

Applied Physics Letters (1988)

L. Eaves G. A. Toombs F. W. Sheard C. A. Payling M. L. Leadbeater

Magnetoquantum oscillations in the tunnel current of double-barrier n-GaAs/(AlGa)As/GaAs/(AlGa)As/GaAs resonant tunneling devices reveal evidence of sequential tunneling in the voltage range corresponding to the resonance when electrons tunnel into the second subband of the GaAs quantum well. The sequential tunneling arises from intersubband scattering between two quasi-bound states of the well. Near this resonance, the charge buildup in the well can be estimated from the magnetoquantum oscillations.

Tunnel effect

Rectangular potential barrier

Tunnel junction

10.1063/1.99522

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Citations (100)

Optical and Electrical Studies of GaP: Ti

physica status solidi (b) (1988)

W. Ulrici K.‐J. Friedland L. Eaves D. P. Halliday C. A. Payling

Abstract The results of optical absorption, photoluminescence, electrical conductivity, and Hall‐effect measurements on LEC‐grown GaP: Ti are reported. The positions of the Ti /Ti acceptor level at E c − 0.50 eV and the Ti /Ti donor level at E v + 1.0 eV are established and the photoionization transitions from and to these deep levels are identified in the absorption spectra and from recharging processes. The internal transitions 3 A 2 → 3 T 1 (F) and → 3 T 1 (P) of Ti are found in absorption and the 2 E ↔ 2 T 2 transitions of Ti 3+ Ga are seen in the absorption as well as luminescence spectra. The interpretation of these bands and sharp lines requires to take into account different kinds of electron–phonon coupling. Photoinduced recharging experiments at low temperatures on high‐resistance GaP:Ti and GaP:Ti:Zn are consistently explained including the three charge states of Ti Ga , of the P Ga P 4 antisite defect, and of the residual Fe Ga impurity.

Acceptor

Atomic electron transition

10.1002/pssb.2221500121

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Current bistability in double-barrier resonant-tunneling devices

Physical review. B, Condensed matter (1989)

Tim Foster M. L. Leadbeater L. Eaves M. Henini O. H. Hughes

We show that the bistability effect observed in the current-voltage characteristics of a double-barrier resonant-tunneling device can be removed by connecting a suitable capacitor across the device. These measurements cast serious doubt on the recent interpretation of the bistability as an intrinsic space-charge effect.

Bistability

Rectangular potential barrier

10.1103/physrevb.39.6205

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Citations (54)

INVESTIGATIONS OF THE NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT BISTABILITY IN DOUBLE BARRIER n+ GaAs/(AlGa)As/GaAs/(AlGa)As/n+ GaAs RESONANT TUNNELLING DEVICES USING HIGH MAGNETIC FIELDS

Le Journal de Physique Colloques (1987)

C. A. Payling E.S. Alves L. Eaves Tim Foster M. Henini

Bistability

10.1051/jphyscol:1987563

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Citations (4)

Zeeman spectroscopy on Ti-doped GaAs and GaP

Semiconductor Science and Technology (1987)

D. P. Halliday C. A. Payling M. K. Saker M. S. Skolnick W. Ulrici

Zeeman spectroscopy measurements on the sharp line structure observed in the absorption and photoluminescence spectrum of GaP:Ti around 0.61 eV are interpreted as 2T2 implies/implied by 2E transitions of Ti3+(d1). A related system of lines at 0.57 eV in GaAs:Ti is similarly interpreted.

Line (geometry)

10.1088/0268-1242/2/10/009

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Citations (14)

Resonant Tunnelling Devices in a Quantising Magnetic Field

Springer series in solid-state sciences (1989)

L. Eaves E.S. Alves M. Henini O. H. Hughes M. L. Leadbeater

10.1007/978-3-642-83810-1_50

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Citations (0)

Electric field-induced quasi-elastic inter-landau level scattering in the space-charge-limited magnetoconductivity of n+n−n+ InP structures

Superlattices and Microstructures (1986)