Carrie Wyse

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Sulfur hexafluoride (SF<inf>6</inf>) as fluorine dopant precursor for production of fluorine doped tin oxide films by MOCVD

Carrie Wyse Robert Torres Teresa M. Barnes Marty Scott M. R. Young

SF ₆ was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO ₂ :F). SnO ₂ :F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH ₃ ) ₄ ) and O ₂ with SF ₆ between 500°C and 650°C and 10-65 mol% SF ₆ . These were compared to un-doped SnO ₂ and SnO ₂ :F grown with CBrF ₃ . SF ₆ required higher thermal activation than CBrF ₃ . High electron mobility (~40 cm ² /V-s) and low resistance (6.5×10 ^-3 ¿-cm) were achieved with SF ₆ at ¿600°C. at 550°C and below, mobility was on the order of 4 cm ² /V-s. Carrier concentrations were on the order of 10 ¹⁹ cm ^-3 , compared to 10 ²⁰ cm ^-3 for CBrF ₃ doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF ₆ generated films of different crystal structure than CBrF ₃ . SIMS Showed a uniform F concentration of 1.5×10 ¹⁹ atom/cm ³ from SF ₆ , but SF ₆ did not incorporate as much F into the films as CBrF ₃ (7.5×10 ²⁰ atoms/cm ³ ). Sulfur contamination was not found.

10.1109/pvsc.2009.5411291

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Impurity Amplification in Ultra High Purity Hydrogen Bromide by Water Catalyzed Reactions from Different Cylinder Materials

ECS Transactions (2009)

Adam Seymour Robert Torres Carrie Wyse Jianlong Yao Tanya Evdokimova

Anhydrous HBr used in reactive ion etch chemistries for the semiconductor industry requires strict control of impurities over time. Proper selection of cylinder materials strongly influences the purity of the HBr over the shelf life of the stored gas. In this work Ni-lined AISI 4130 Cr-Mo steel cylinders are compared to the gas industry standard AISI 4130 Cr-Mo steel cylinders and 316L SS cylinders regarding the generation of atmospheric impurities over the shelf life of the cylinders. In addition an accelerated aging process of water doping was executed to determine variances between materials. Over the period of 18 months, significant amounts of atmospheric impurities such as CH4, CO2, and H2 were generated in the water doped cylinders. However, the Ni lined cylinders inhibited the atmospheric impurity generation by as much as 20 times, compared to the Cr-Mo steel or 316L SS cylinders in the accelerated study. A similar affect was observed in the standard non-accelerated study. These results demonstrate that Ni lined Cr-Mo steel provides a superior package for anhydrous HBr, due to superior contamination control.

Anhydrous

10.1149/1.3108354

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Identification And Quantification Of Impurities Critical To The Performance Of Nitride Semiconductor Devices

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2006)

Robert Torres J.‐I. Chyi G T Chen Carrie Wyse Joseph Vininski

Abstract not Available.

Identification

10.1149/ma2006-02/32/1552

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Cylinder Materials of Construction for Ultra-High Purity HBr in Advanced Semiconductor Etch Processes

ECS Transactions (2008)

Adam Seymour Carrie Wyse Jianlong Yao P. Jha Eric W. Olsen

Anhydrous HBr used in etch processing for the semiconductor industry requires strict impurity control. However, the gas cylinder material of construction plays a critical role in controlling and maintaining purity levels of the delivered HBr process gas and must be carefully selected. In this work Ni-lined AISI 4130 Cr-Mo steel cylinders are compared against the gas industry standard AISI 4130 Cr-Mo steel cylinders with regard to (a) surface roughness/area and oxide layer thickness after exposure to HBr and (b) the concentration of moisture in delivered HBr gas. Over the period of a year, the surface roughness increase of the polished Cr-Mo steel package doubles that of the Ni-lined package and the penetration of the oxide layer into the metal for the Cr-Mo steel is over 10 times that for the Ni surface. Finally the more inert surface of the Ni lining is shown to lower the moisture concentration in the HBr gas by ~4 times. These findings demonstrate that Ni-lined AISI 4130 Cr-Mo steel provides a superior package for Ultra High Purity HBr storage and delivery.

Inert gas

Inert

Anhydrous

10.1149/1.3035369

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Impurity Amplification in Ultra High Purity Hydrogen Bromide by Water Catalyzed Reactions from Different Cylinder Materials

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2008)

Adam Seymour Robert Torres Carrie Wyse Jianlong Yao Mark W. Raynor

Abstract not Available.

Hydrogen bromide

10.1149/ma2008-02/23/1862

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HBr Corrosion Studies of Alloys Used in Semiconductor Wafer Manufacturing

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2006)

Carrie Wyse Joseph Vininski Robert Torres

Abstract not Available.

Semiconductor device fabrication

10.1149/ma2006-02/14/778

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Ammonia Impurities Critical To The Performance Of Nitride Semiconductor Devices

ECS Transactions (2006)

Robert Torres J.‐I. Chyi G T Chen Carrie Wyse Joseph Vininski

AlGaN/GaN HEMT devices were grown under specific experimental conditions designed to elucidate the effects of purification of the ammonia gas. Two different, commercially available, purifiers were tested under identical growth conditions along with three different grades of ammonia. After growth of the AlGaN/GaN layers, the wafers were subjected to Hall measurements where the sheet concentration, and mobility, were determined. The results clearly showed significantly enhanced performance for the inorganic based purifier compared to the resin based organometallic purifier for all experimental parameters tested. Additionally, the nitride devices were subjected to SIMS analysis with depth profiling in an attempt to identify the elemental nature of the impurities that caused the discrepancy in performance results between the various samples. Results from the Hall measurements and the SIMS analysis are presented and correlated to the conditions controlled during the growth of the nitride devices.

10.1149/1.2357213

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Citations (3)

UTILISATION DE FLUIDES RÉACTIFS DANS LA FABRICATION ADDITIVE ET PRODUITS FABRIQUÉS À PARTIR DE CES FLUIDES

Hideharu Shimizu Mark W. Raynor Daniel J. Tempel Junpin Yao Larry Wagg

Source

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Cylinder Materials of Construction for Ultra-High Purity HBr in Advanced Semiconductor Etch Processes

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2008)

Adam Seymour Carrie Wyse Jianlong Yao Mark W. Raynor Robert Torres

Abstract not Available.