Cheng–Hsin Chen

Fu Jen Catholic University

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Yi-Chuen Eng

United Microelectronics (Taiwan)

Jyi-Tsong Lin

National Sun Yat-sen University

Yi-Hsuan Fan

National Chung Hsing University

Nobuyuki Enomoto

University of Yamanashi

Kuan-Yu Lu

National Formosa University

Chih-Hsuan Tai

National Sun Yat-sen University

Tzu-Feng Chang

United Microelectronics (Taiwan)

Yu-Che Chang

National Sun Yat-sen University

Naoya Sakamoto

Hokkaido University Hospital

Masayuki Kurosaki

Musashino Red Cross Hospital

Cooperative Institutions

Tokyo Medical and Dental University

National Applied Research Laboratories

National Taiwan University

National Sun Yat-sen University

Cardinal Tien Hospital

National Yang Ming Chiao Tung University

Fu Jen Catholic University

The University of Tokyo

National Taiwan Ocean University

National Chung Hsing University

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Pulmonary Tuberculosis-Related Acute Respiratory Distress Syndrome in a Healthy Adult Rescued by Extracorporeal Membrane Oxygenation- A Case Report and Literature Review

胸腔醫學 (2016)

Cheng–Hsin Chen Kuo‐Chin Kao Ning‐Hung Chen Chung-Chi Huang Hen-I Lin

Pulmonary tuberculosis (TB) has rarely been recognized as an etiologic agent of acute respiratory distress syndrome (ARDS). In this case report, we describe a previously healthy 36-year-old female who developed severe ARDS caused by pulmonary TB. Pulmonary TB was confirmed by positive acid-fast stain and TB sputum culture results; other microbiological etiologies showed negative findings. In addition to treatment with anti-TB agents, veno-venous mode extracorporeal membrane oxygenation was performed owing to progressive severe oxygenation failure under conventional mechanical ventilation. Despite aggressive treatment in the intensive care unit, the patient's condition deteriorated and she died as a result ofseptic shock and multiple organ failure. This case report demonstrated that pulmonary TB should not be ignored as a possible cause of ARDS, in order to avoid the adverse consequences of delayed diagnosis or missed treatment, especially in an endemic area.

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Characteristics of a new trench-oxide thin-film transistor and its 1T-DRAM applications

Hsien-Nan Chiu Jyi-Tsong Lin Yi-Chuen Eng Tzu-Feng Chang Chih-Hung Sun

In this paper, we propose a simple trench-oxide thin-film transistor (TO TFT) process for 1T-DRAM applications. Our proposed TO TFT structure has several novel features as follows: 1. The buried oxide and the isolation oxide are carried out simultaneously in order to achieve a goal of simple process. 2. The trench design is used to improve both the sensing current windows (~ 84%) and the retention time (~ 57%). 3. The thermal stability is drastically improved by its naturally formed source/drain tie. The above mentioned features help our proposed device structure to demonstrate the desired characteristics that are better than that of a conventional TFT. Additionally, the thermal instability is drastically improved which is good for long-term device operation.

Dram

Shallow trench isolation

10.1109/icsict.2010.5667562

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A 3-D simulation study of a novel vertical MOSFET with source-tied (STVMOS)

Chih-Hsuan Tai Jyi-Tsong Lin Yi-Chuen Eng Kuan-Yu Lu Cheng–Hsin Chen

In this paper, we propose a source-tied vertical MOSFET (STVMOS) by using 3-D simulation. The characteristics of STVMOS are not only similar to the SOI vertical MOSFET (SOI-VMOS), but also have much better thermal reliability. According to TCAD simulation results, we have achieved 70 mV/decade S.S., 145 mV/V DIBL, and more than 10 ⁹ I ON /I OFF current ratio.

10.1109/ipfa.2010.5531997

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A Three-Dimensional Simulation Study of Source/Drain-Tied Double-Gate Fin Field-Effect Transistor Design for 16-nm Half-Pitch Technology Generation and Beyond

Japanese Journal of Applied Physics (2011)

Yi-Chuen Eng Jyi-Tsong Lin Tzu-Feng Chang Chun-Yu Chen Yi-Hsuan Fan

This paper presents a three-dimensional (3D) simulation study of source/drain (S/D)-tied (SDT) double-gate (DG) fin field-effect transistor (FinFET) design for 16-nm half-pitch technology generation and beyond using technology computer-aided design (TCAD) tools. A simple process to fabricate the proposed SDT FinFET is proposed. An investigation of the fin width (Wfin) on the electrical characteristics is shown, suggesting that a reduced Wfin is good for both the suppression of short-channel effects and the reduction of parasitic capacitance in SDT FinFETs. Also, the self-heating can be well controlled in our proposed SDT FinFET which is a difficult task for SOI family. The proposed FinFET is also compared with the existing experimental data, showing that the SDT FinFET not only demonstrates desired short-channel characteristics due to its inherent structure advantages (partially insulating oxide under the channel region), but also reduces the costs of device fabrication due to its simple process method and planar-like structure.

Fin

Parasitic capacitance

Technology CAD

Short-channel effect

10.7567/jjap.50.084301

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Hepatitis C virus non-structural proteins responsible for suppression of the RIG-I/Cardif-induced interferon response

Journal of General Virology (2007)

Megumi Tasaka Naoya Sakamoto Yoshie Itakura Mina Nakagawa Yasuhiro Itsui

Viral infections activate cellular expression of type I interferons (IFNs). These responses are partly triggered by RIG-I and mediated by Cardif, TBK1, IKKepsilon and IRF-3. This study analysed the mechanisms of dsRNA-induced IFN responses in various cell lines that supported subgenomic hepatitis C virus (HCV) replication. Transfection of dsRNA into Huh7, HeLa and HEK293 cells induced an IFN expression response as shown by IRF-3 dimerization, whilst these responses were abolished in corresponding cell lines that expressed HCV replicons. Similarly, RIG-I-dependent activation of the IFN-stimulated response element (ISRE) was significantly suppressed by cells expressing the HCV replicon and restored in replicon-eliminated cells. Overexpression analyses of individual HCV non-structural proteins revealed that NS4B, as well as NS34A, significantly inhibited RIG-I-triggered ISRE activation. Taken together, HCV replication and protein expression substantially blocked the dsRNA-triggered, RIG-I-mediated IFN expression response and this blockade was partly mediated by HCV NS4B, as well as NS34A. These mechanisms may contribute to the clinical persistence of HCV infection and could constitute a novel antiviral therapeutic target.

Replicon

Subgenomic mRNA

RIG-I

HEK 293 cells

NS2-3 protease

10.1099/vir.0.83056-0

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Citations (36)

Thermal characteristics of an advanced bMPI-based 1T-DRAM cell

Cheng–Hsin Chen Jyi-Tsong Lin Yi-Chuen Eng Hsien-Nan Chiu Tzu-Feng Chang

In this paper, we study the thermal characteristics of the bMPI-based 1T-DRAM cell. For a bMPI-FET, it can not only improve the thermal stability about 38% compared with the bPDSOI-FET due to the S/D-tied scheme, but also maintain the desired short-channel characteristics due to the block oxide structure.

Dram

Thermal Stability

10.1109/ipfa.2010.5532078

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Citations (1)

Flood stage forecasting using a data-driven model

Japan Geoscience Union (2018)

Ya‐Chi Chang Cheng–Hsin Chen Tsun-Hua Yang

Flood forecasting

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Improving our understanding of flood forecasting using earlier hydro-meteorological intelligence

Journal of Hydrology (2014)

Dong-Sin Shih Cheng–Hsin Chen Gour‐Tsyh Yeh

Typhoon

Flood forecasting

Flood warning

Quantitative precipitation forecast

Early warning system

Hydrological modelling

10.1016/j.jhydrol.2014.02.059

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Citations (47)

A new type of CMOS inverter with Lubistor load and NMOS driver

International Symposium on Next-Generation Electronics (2010)

Jyi-Tsong Lin Hsuan-Hsu Chen Kuan-Yu Lu Cheng–Hsin Chen

This paper presents a non-conventional CMOS device, which is composed of an nMOSFET and a tunneling field effect transistor (TFET) for driver and load. Based on the measurement data of TFET device published, we have for the first time drawn the Q line of the new designed CMOS compared with the conventional CMOS to verify its feasibility. The static power consumption of it can be optimized and reduced to 4.6E-8 A, and all of the logic operations are correct and have enough swing for manipulating its following operation. Due to its unique structure and the output node being shared by the load and the driver, the integration density of it can be reduced dramatically. The area benefit thus more than 58.5% has been achieved compared with the conventional CMOS layout. In addition, the delay time is improved more than 63%.

10.1109/isne.2010.5669181

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Visualization analysis and Acoustic Doppler Current Profiler measurements by using the Acoustic Doppler Current Profiler river flow analyzer

Hau-Wei Wang Shih-Chiang Li Jian‐Hao Hong Cheng–Hsin Chen Yu‐Chi Wang

Acoustic Doppler velocimetry

10.1201/9781315644479-237

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