Martyn A. McLachlan

Imperial College London

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James R. Durrant

Imperial College London

Thomas D. Anthopoulos

King Abdullah University of Science and Technology

Chieh‐Ting Lin

National Chung Hsing University

Tian Du

Helmholtz Institute Erlangen-Nürnberg

David W. McComb

The Ohio State University

Thomas J. Macdonald

University College London

Martin Heeney

King Abdullah University of Science and Technology

Claire H. Burgess

Eindhoven University of Technology

Shengda Xu

Shanghai Maritime University

Weidong Xu

University of Cambridge

Cooperative Institutions

Imperial College London

216

Georgia Institute of Technology

135

Royal Society of Chemistry

122

Northwestern University

114

Cambridge Consultants (United Kingdom)

112

University of London

110

Institut de Recherche Interdisciplinaire de Grenoble

109

Pohang University of Science and Technology

CIC nanoGUNE

Transnational Press London

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FERROELECTRIC THREE-DIMENSIONALLY ORDERED MACROPOROUS THIN FILMS

Integrated ferroelectrics (2007)

Catherine Christine Ann Barron Martyn A. McLachlan Qi Zhang David W. McComb

In this contribution we report on the synthesis and characterisation of ferroelectric three-dimensionally ordered macroporous (3-DOM) thin films for application as tunable and switchable photonic crystals. The films are formed on conducting substrates using a colloidal crystal templating technique, which allows controlled variation of pore size and lattice spacing. The structure and properties of the thin films produced by infiltration of colloidal crystal templates using a sol-gel precursor for the ferroelectric perovskite Pb(ZrxTi1-x)O3 (PZT) are reported.

Colloidal crystal

Template

Crystal (programming language)

10.1080/10584580701746764

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Citations (1)

Electrodeposition of ZnO Nanostructures on Molecular Thin Films

Chemistry of Materials (2011)

Amy C. Cruickshank Stephen En Rong Tay Benoit N. Illy Raffaello Da Campo S. Schumann

Electrodeposition of highly crystalline ZnO nanostructures directly onto copper phthalocyanine and pentacene thin films, from aqueous solutions containing zinc nitrate and dissolved oxygen, has been successfully demonstrated for the first time using a two-step electrochemical deposition process. Importantly, surface activation of the molecular thin film substrates by depositing a thin layer of ZnO nanoparticles at high cathodic overpotentials prior to film growth was found to be crucial for achieving a dense coverage of ZnO nanostructures with uniform morphology. The mechanism for ZnO deposition via electroreduction of hydroxide precursor species (oxygen and NO3– ions) at the organic-electrolyte interface was shown to be analogous to that reported for conventional inorganic and metal electrodes. Comparison of cathodic current density-time curves, measured during deposition, with film orientation and morphology revealed that the cathodic current density and number of nucleation sites are key factors in determining the characteristics of ZnO film growth on organic substrates. Significantly, the CuPc and pentacene films are not damaged or degraded during this process.

Zinc nitrate

Pentacene

Deposition

Zinc hydroxide

10.1021/cm200764h

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Citations (57)

High Responsivity and Response Speed Single‐Layer Mixed‐Cation Lead Mixed‐Halide Perovskite Photodetectors Based on Nanogap Electrodes Manufactured on Large‐Area Rigid and Flexible Substrates

Advanced Functional Materials (2020)

Dimitra G. Georgiadou Yen‐Hung Lin Jongchul Lim Sinclair R. Ratnasingham Martyn A. McLachlan

Adv. Funct. Mater. 2019, 29, 1901371 In the initially published version of this article, the name of Akmaral Seitkhan was omitted from the final authors list. The correct author list is as follows: Dimitra G. Georgiadou,* Yen-Hung Lin, Jongchul Lim, Sinclair Ratnasingham, Akmaral Seitkhan, Martyn A. McLachlan, Henry J. Snaith, and Thomas D. Anthopoulos* The respective updated author affiliations are as follows: Dr. D. G. Georgiadou, Prof. T. D. Anthopoulos Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London Exhibition Road, London SW7 2BW, UK E-mail: d.georgiadou@imperial.ac.uk; thomas.anthopoulos@kaust.edu.sa Dr. D. G. Georgiadou, S. Ratnasingham, Dr. M. A. McLachlan Department of Materials and Centre for Plastic Electronics Imperial College London Prince Consort Road, London SW7 2BP, UK Dr. Y.-H. Lin, Dr. J. Lim, Prof. H. J. Snaith Department of Physics University of Oxford Clarendon Laboratory Parks Road, Oxford OX1 3PU, UK A. Seitkhan, Prof. T. D. Anthopoulos Division of Physical Sciences and Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900, Saudi Arabia The authors apologize for any inconvenience this error may have caused.

10.1002/adfm.201909758

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Citations (4)

Transparent conducting oxide top contacts for organic electronics

Journal of Materials Chemistry C (2013)

Joseph B. Franklin James B. Gilchrist Jonathan M. Downing Kirsty Roy Martyn A. McLachlan

A versatile method for the deposition of transparent conducting oxide (TCO) layers directly onto conjugated polymer thin film substrates is presented. Using pulsed laser deposition (PLD) we identify a narrow window of growth conditions that permit the deposition of highly transparent, low sheet resistance aluminium-doped zinc oxide (AZO) without degradation of the polymer film. Deposition on conjugated polymers mandates the use of low growth temperatures (<200 °C), here we deposit AZO onto poly-3-hexylthiophene (P3HT) thin films at 150 °C, and investigate the microstructural and electrical properties of the AZO as the oxygen pressure in the PLD chamber is varied (5–75 mTorr). The low oxygen pressure conditions previously optimized for AZO deposition on rigid substrates are shown to be unsuitable, resulting in catastrophic damage of the polymer films. By increasing the oxygen pressure, thus reducing the energy of the ablated species, we identify conditions that allow direct deposition of continuous, transparent AZO films without P3HT degradation. We find that uptake of oxygen into the AZO films reduces the intrinsic charge carriers and AZO films with a measured sheet resistance of approximately 500 Ω □−1 can be prepared. To significantly reduce this value we identify a novel process in which AZO is deposited over a range of oxygen pressures – enabling the deposition of highly transparent AZO with sheet resistances below 50 Ω □−1 directly onto P3HT. We propose these low resistivity films are widely applicable as transparent top-contacts in a range of optoelectronic devices and highlight this by demonstrating the operation of a semi-transparent photovoltaic device.

Organic Electronics

10.1039/c3tc31296h

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Citations (16)

Masthead: (Adv. Electron. Mater. 5/2023)

Advanced Electronic Materials (2023)

Peter Woias S Wong Matthias Wuttig Jong Chul Ahn Marin Alexe

Alma mater

10.1002/aelm.202370024

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Citations (0)

p-channel thin-film transistors based on spray-coated Cu2O films

Applied Physics Letters (2013)

Pichaya Pattanasattayavong Stuart Thomas George Adamopoulos Martyn A. McLachlan Thomas D. Anthopoulos

Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1.

10.1063/1.4803085

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Citations (104)

Origin of Open-Circuit Voltage Losses in Perovskite Solar Cells Investigated by Surface Photovoltage Measurement

ACS Applied Materials & Interfaces (2019)

Mátyás Dabóczi Iain Hamilton Shengda Xu Joel Luke Saurav Limbu

Increasing the open-circuit voltage (Voc) is one of the key strategies for further improvement of the efficiency of perovskite solar cells. It requires fundamental understanding of the complex optoelectronic processes related to charge carrier generation, transport, extraction, and their loss mechanisms inside a device upon illumination. Herein, we report the important origin of Voc losses in methylammonium lead iodide perovskite (MAPI)-based solar cells, which results from undesirable positive charge (hole) accumulation at the interface between the perovskite photoactive layer and the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) hole-transport layer. We show strong correlation between the thickness-dependent surface photovoltage and device performance, unraveling that the interfacial charge accumulation leads to charge carrier recombination and results in a large decrease in Voc for the PEDOT:PSS/MAPI inverted devices (180 mV reduction in 50 nm thick device compared to 230 nm thick one). In contrast, accumulated positive charges at the TiO2/MAPI interface modify interfacial energy band bending, which leads to an increase in Voc for the TiO2/MAPI conventional devices (70 mV increase in 50 nm thick device compared to 230 nm thick one). Our results provide an important guideline for better control of interfaces in perovskite solar cells to improve device performance further.

Surface Photovoltage

Open-circuit voltage

Photoactive layer

Charge carrier

Perovskite solar cell

10.1021/acsami.9b16394

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Citations (78)

Low-voltage ZnO thin-film transistors based on Y2O3 and Al2O3 high-k dielectrics deposited by spray pyrolysis in air

Applied Physics Letters (2011)

George Adamopoulos Stuart Thomas Donal D. C. Bradley Martyn A. McLachlan Thomas D. Anthopoulos

We report the application of ambient spray pyrolysis for the deposition of high-k polycrystalline Y2O3 and amorphous Al2O3 dielectrics and their use in low-voltage ZnO thin-film transistors. The films are studied by means of atomic force microscopy, UV-visible absorption spectroscopy, impedance spectroscopy, and field-effect measurements. ZnO transistors based on spray pyrolysed Y2O3 and Al2O3 dielectrics show low leakage currents, and hysteresis-free operation with a maximum electron mobility of 34 cm2/V s and current on/off ratio on the order of 105. This work is a significant step toward high-performance oxide electronics manufactured using simple and scalable processing methods.

10.1063/1.3568893

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Citations (130)

Deciphering the Role of Hole Transport Layer HOMO Level on the Open Circuit Voltage of Perovskite Solar Cells

Advanced Materials Interfaces (2022)

Zhongyao Jiang Tian Du Chieh‐Ting Lin Thomas J. Macdonald Jiongye Chen

Abstract With the rapid development of perovskite solar cells, reducing losses in open‐circuit voltage ( V oc ) is a key issue in efforts to further improve device performance. Here it is focused on investigating the correlation between the highest occupied molecular orbital (HOMO) of device hole transport layers (HTLs) and device V oc . To achieve this, structurally similar HTL materials with comparable optical band gaps and doping levels, but distinctly different HOMO levels are employed. Using light‐intensity dependent V oc and photoluminescence measurements significant differences in the behavior of devices employing the two HTLs are highlighted. Light‐induced increase of quasi‐Fermi level splitting (Δ E F ) in the perovskite layer results in interfacial quasi‐Fermi level bending required to align with the HOMO level of the HTL, resulting in the V oc measured at the contacts being smaller than the Δ E F in the perovskite. It is concluded that minimizing the energetic offset between HTLs and the perovskite active layer is of great importance to reduce non‐radiative recombination losses in perovskite solar cells with high V oc values that approach the radiative limit.

Open-circuit voltage

Active layer

Band bending

10.1002/admi.202201737

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Citations (12)

Environmentally friendly, aqueous processed ZnO as an efficient electron transport layer for low temperature processed metal–halide perovskite photovoltaics

Inorganic Chemistry Frontiers (2017)

Jiaqi Zhang Maurizio Morbidoni Keke Huang Shouhua Feng Martyn A. McLachlan

The aqueous processed ZnO/PCBM modified ETLs enable low-temperature processed, thermally stable and efficient perovskite solar cells showing negligible hysteresis.

Environmentally Friendly

10.1039/c7qi00667e

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Citations (12)