Zhongyi Xia

Shenzhen Technology University

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Jim Browning

Boise State University

S. Meassick

Northeastern University

David A. Cathey

Micron (United States)

Tianzhao Wu

Shenzhen Technology University

Chi Hou Chan

City University of Hong Kong

Kun Han

Northeast Petroleum University

Ling Bing Kong

Civil Aviation Flight University of China

C. Chan

Northeastern University

Xiaojuan Zhu

Shaanxi University of Science and Technology

B. Zhang

Infineon Technologies (Canada)

Cooperative Institutions

Chinese Academy of Sciences

Shenzhen Technology University

Northeastern University

Universidad del Noreste

University of Science and Technology of China

Shenzhen University

Tongji University

Sichuan University

University of Wisconsin–Madison

Changzhou University

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Method for Cleaning Phosphor Screens for Use with Field Emission Displays - Micron Technology Inc. (Boise, ID) - United States Patent 6409564

Jim Browning Zhongyi Xia David A. Cathey Surjit S. Chadha

Source

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Citations (0)

Research progress in deep learning for ceramics surface defect detection

Measurement (2024)

M.Y. Zhou Tianzhao Wu Zhongyi Xia Bin He Ling Bing Kong

10.1016/j.measurement.2024.115956

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Citations (1)

Investigation of the operating modes of gated vacuum field emitter arrays to reduce failure rates

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (1994)

S. Meassick Zhongyi Xia C. Chan Jim Browning

The influence of the operating mode of arrays of gated vacuum field emitters on the intrinsic failure rate of emitter tips has been investigated. In particular, the failure rates of arrays of gated silicon vacuum field emitters operating in a dc and pulsed bias mode as a function of pulse duty cycle, pulse frequency, emitted current, and neutral gas pressure have been measured. There is a large reduction of the failure rate, per unit time that the array is emitting current, when emitters are operated in pulsed mode as compared to a dc mode of operation. This reduction in the failure rate is dependent on the duty cycle of the pulses that the array is operated at but is independent of the repetition frequency of the pulses. The failure rate is an exponential function of the emitted current, both for the dc bias and for the pulse bias case. The increase in failures with increasing current is more rapid for a dc bias than for a pulse bias. The failure rate of gated vacuum field emitters increases rapidly with the neutral gas pressure, with the rate of increase in failures identical for a dc and a pulsed bias.

Duty cycle

DC bias

Biasing

Pulsed DC

10.1116/1.587377

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Citations (6)

Process Development and Characterization of High Performance PERC Solar Cells and Modules

World Conference on Photovoltaic Energy Conversion (2013)

Guoqiang Xing B. Zhang Zhen Yang K.F. Teng Li Tao

Characterization

Process development

10.4229/28theupvsec2013-2ao.3.4

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Citations (0)

Fabrication of Field Emission Array with Vacuum Cathodic Arc Deposition - Micron Technology Inc. (Boise, ID) - United States Patent #6027619

David A. Cathey Jim Browning Zhongyi Xia

Vacuum arc

Deposition

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Modeling and experiment on plasma source ion implantation

Journal of Applied Physics (1993)

Zhongyi Xia Chung Chan

The critical plasma parameters for plasma source ion implantation (PSII) are the ion implantation current, the sheath expansion characteristic, the energy of the implanted ions, and the electric field intensity on the electrode surface. These quantities have been calculated for spherical electrodes using a fluid dynamic model. The results show that for the implantation time larger than ten ion plasma periods, both the ion current and the sheath expansion characteristic of the fluid dynamic model are consistent with that of the previous analytic models. But for implantation time less than ten ion plasma periods, the results are quite different. As the sphere radius gets smaller, the difference in the results becomes greater. In our experiments, the measured cathode current and the sheath expansion characteristic of the spherical cathode are shown to fit the fluid dynamic model better. The negative high voltage pulse employed in our experiments has a rising edge of less than 1 μs and a flat top approaching the theoretical model. The secondary electron emission coefficients for stainless steel and copper under PSII conditions have also been estimated using two different methods: retarding static electric field energy analyzer and the cathode current measurement. It is found that under PSII conditions, secondary electron emission coefficients are in general larger than the values taken under the condition of atomically clean surfaces in ultrahigh vacuum.

Ion current

Debye sheath

Secondary emission

10.1063/1.352923

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Citations (20)

Deep-learning-based pyramid-transformer for localized porosity analysis of hot-press sintered ceramic paste

PLoS ONE (2024)

Zhongyi Xia Boqi Wu Chia-Tai Chan Tianzhao Wu Man Zhou

Scanning Electron Microscope (SEM) is a crucial tool for studying microstructures of ceramic materials. However, the current practice heavily relies on manual efforts to extract porosity from SEM images. To address this issue, we propose PSTNet (Pyramid Segmentation Transformer Net) for grain and pore segmentation in SEM images, which merges multi-scale feature maps through operations like recombination and upsampling to predict and generate segmentation maps. These maps are used to predict the corresponding porosity at ceramic grain boundaries. To increase segmentation accuracy and minimize loss, we employ several strategies. (1) We train the micro-pore detection and segmentation model using publicly available Al 2 O 3 and custom Y 2 O 3 ceramic SEM images. We calculate the pixel percentage of segmented pores in SEM images to determine the surface porosity at the corresponding locations. (2) Utilizing high-temperature hot pressing sintering, we prepared and captured scanning electron microscope images of Y 2 O 3 ceramics, with which a Y 2 O 3 ceramic dataset was constructed through preprocessing and annotation. (3) We employed segmentation penalty cross-entropy loss, smooth L1 loss, and structural similarity (SSIM) loss as the constituent terms of a joint loss function. The segmentation penalty cross-entropy loss helps suppress segmentation loss bias, smooth L1 loss is utilized to reduce noise in images, and incorporating structural similarity into the loss function computation guides the model to better learn structural features of images, significantly improving the accuracy and robustness of semantic segmentation. (4) In the decoder stage, we utilized an improved version of the multi-head attention mechanism (MHA) for feature fusion, leading to a significant enhancement in model performance. Our model training is based on publicly available laser-sintered Al 2 O 3 ceramic datasets and self-made high-temperature hot-pressed sintered Y 2 O 3 ceramic datasets, and validation has been completed. Our Pix Acc score improves over the baseline by 12.2%, 86.52 vs. 76.01, and the mIoU score improves from by 25.5%, 69.10 vs. 51.49. The average relative errors on datasets Y 2 O 3 and Al 2 O 3 were 6.9% and 6.36%, respectively.

Upsampling

10.1371/journal.pone.0306385

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Citations (0)

Ion and electron energies in gated field emitter failures

IEEE Transactions on Plasma Science (1993)

Jim Browning S. Meassick Zhongyi Xia Chi Hou Chan N.E. McGruer

In previous work (1992), the authors studied the characteristics of gated field emitter failures and developed a theory to explain failure initiation. During a failure, the voltage between the emitter tip and gate (spaced 1 mu m apart) was found to drop from -140 V to approximately=-10 V. The current density was found to be approximately 10/sup 12/ A/m/sup 2/ during the failure, and plumes of ions and electrons were injected into vacuum. The ratio of ion current to electron current was found to be 10%. Those results indicated that the failures were similar to cathodic vacuum arcs. In the present study the energies of the ions and electrons are measured using a retarding potential energy analyzer. The results show that there are ions with energies as high as 80 eV and electrons with energies of 6 eV. The high-energy ions confirm that emitter failures are cathodic vacuum arcs.< >

10.1109/27.219398

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Citations (2)

Investigation Of The Operating Modes Of Gated Vacuum Field Emitter Arrays To Reduce The Failure Rate

S. Meassick Zhongyi Xia Chi Hou Chan Jim Browning

10.1109/ivmc.1993.700307

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Citations (0)

Hybrid HCI Degradation in Sub-micron NMOSFET due to Mixed Back-end Process Damages

2022 IEEE International Reliability Physics Symposium (IRPS) (2020)

Kuilong Yu Xiaojuan Zhu Rui Fang Tingting Ma Kun Han

This paper presents one hybrid hot carrier injection (HCI) degradation behavior of 3.3 V NMOS transistor. It is noted to remarkably occur when annealing the wafer fully encapsulated by the passivation layer (as enclosed in the red box in Fig. 1). Along with the HCI stress time, the degradation mechanism transits from the drain avalanche hot carrier (DAHC) injection to the channel hot electron (CHE) injection, manifesting as the turn-around behavior of I _Dsat and V _Tsat degradation. Electrical stress test results indicate the weak gate oxide interface with silicon substrate. It could be attributed to the combined contribution of the plasma induced damage (PID) in high density plasma (HDP) deposition and the hydrogen species driven to the gate oxide interface by the alloying process. The results in this work can inspire the HCI tuning regarding back-end process steps.

Passivation

Degradation

Hot-carrier injection

10.1109/irps45951.2020.9129336

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Citations (4)