P. Basmaji

Innovatech (Brazil)

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D. Lubyshev

IQE (United States)

G. M. Gusev

Universidade de São Paulo

J C Rossi

Universidade Federal de São Carlos

Yu. V. Nastaushev

Institute of Semiconductor Physics

Pedro Pablo González‐Borrero

Universidade Estadual do Centro-Oeste

J. C. Galzerani

Universidade Federal de São Carlos

U. Gennser

Centre de Nanosciences et de Nanotechnologies

J.C. Portal

Centre National de la Recherche Scientifique

D. K. Maude

Centre National de la Recherche Scientifique

Yu. A. Pusep

Universidade de São Paulo

Cooperative Institutions

Universidade de São Paulo

Centre National de la Recherche Scientifique

Universidade Federal de São Carlos

Institute of Semiconductor Physics

Universidade Estadual Paulista (Unesp)

Laboratoire National des Champs Magnétiques Intenses

Russian Academy of Sciences

Institut National des Sciences Appliquées de Toulouse

Universidade Estadual de Campinas (UNICAMP)

Siberian Branch of the Russian Academy of Sciences

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Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures

Journal of Applied Physics (2000)

Yu. A. Pusep M. T. O. Silva J. C. Galzerani S. C. P. Rodrigues L. M. R. Scolfaro

Raman scattering was applied to a study of collective plasmon–LO phonon excitations polarized normal to the layers in strongly coupled GaAs/AlAs and δ-doped GaAs superlattices. Thus, the corresponding (vertical) motion of electrons and their localization were studied and compared in both types of superlattices. The localization of the collective excitations caused by the localization of the electrons at the top of the miniband was found in the GaAs/AlAs superlattices. Much stronger localization effects were observed in the δ-doped structures than in the GaAs/AlAs superlattices. Our results reveal evidence of the formation of a miniband structure in the δ-doped structures even in the case of complete localization of electrons inside one period.

Electron localization function

Weak localization

Anderson Localization

10.1063/1.372097

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Citations (3)

Interference effects in nonplanar wires with a two-dimensional electron gas

Physics of low-Dimensional structures (1998)

P. Basmaji G. M. Gusev Newton La Scala Pedro Pablo González‐Borrero D. Lubyshev

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Dephasing time and interference effects in coupled quantum wells

Solid State Communications (1994)

G. M. Gusev U. Gennser D. K. Maude J.C. Portal J C Rossi

Dephasing

Quantum interference

10.1016/0038-1098(94)90263-1

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Citations (1)

The magnetic-field-tuned impurity level in a mesoscopic Al_xGa_1-xAs/GaAs antidot sample

Journal of Physics Condensed Matter (1994)

G. M. Gusev U. Gennser D. K. Maude J. C. Portal D. Lubyshev

The magnetoresistance of mesoscopic GaAs/AlxGa1-xAs samples containing differently ordered antidot lattices with the same long-range periodicity of 0.3 mu m has been studied. In a periodic lattice, magnetic-field-induced two-level switching of several impurities has been observed. In contrast, in a disordered antidot lattice single-impurity switching dominates as the overlapping of the depletion regions around the antidots allows for only a few conducting channels through the sample. The impurity dwell time of one such level is seen to undergo large variations when sweeping an external magnetic field. It has been possible to observe the influence of other defects in the sample on the dominating impurity level, since fluctuations of the local electron density affect the Aharanov-Bohm oscillations, and therefore also the impurity double-well potential.

Mesoscopic physics

Lattice (music)

10.1088/0953-8984/6/18/002

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Citations (1)

Influence of atomic-scale roughness on Raman selection rules in the ultrathin-layer (GaAs)n1(AlAs)

Physical review. B, Condensed matter (1995)

Yu. A. Pusep S.W. da Silva J. C. Galzerani D. Lubyshev P. Basmaji

An interpretation of the Raman spectra of GaAs/AlAs ultrathin-layer superlattices based on the microscopic analysis of the optical vibrational modes has been reported. The difference between normal and inverted interfaces is responsible for the lack of the inversion symmetry of the layers with respect to the central plane, therefore confined modes can no longer be considered as even or odd ones. All the optical vibrational modes, independently of their quantum index, are now active in Raman scattering. Our results show the evidence of the strong difference between the distribution of the Ga and Al atoms at the normal and inverted interfaces.

10.1103/physrevb.51.9891

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Citations (8)

Absence of delocalised states in a 2D electron gas in a magnetic field below ωcτ=1

Solid State Communications (1996)

G. M. Gusev U. Gennser Xavier Kléber D. K. Maude J. C. Portal

Landau quantization

Thermal Hall effect

Lattice (music)

Transition point

10.1016/0038-1098(96)00384-5

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Citations (5)

Atomic-scale characterization of interfaces in the GaAs/AlAs superlattices

Abstracts (1995)

Yu. A. Pusep S. Silva J. C. Galzerani D. Lubyshev P. Basmaji

Characterization

Atomic units

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Charge capture in heterostructures with disordered antidot lattice

Materials Science and Engineering B (1995)

P. Basmaji G. M. Gusev D. Lubyshev M. de P.A. Silva J C Rossi

Mesoscopic physics

Lattice (music)

10.1016/0921-5107(95)01351-2

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Raman scattering of the optical vibrational modes in (GaAs)n(AlAs)nsuperlattices grown on (311)Aand (311)Bsurfaces

Physical review. B, Condensed matter (1995)

Yu. A. Pusep S.W. da Silva J. C. Galzerani D. Lubyshev В. В. Преображенский

Raman spectra of confined optical phonons in (GaAs${)}_{\mathit{n}}$(AlAs${)}_{\mathit{n}}$ superlattices grown by molecular-beam epitaxy on (311)A, (311)B, and (100) surfaces have been measured in order to study the corrugation of (311) interfaces. Careful analysis of the experimental data reveals no evidence of such a corrugation. The dispersion of optical phonons in both GaAs and AlAs layers has been obtained and was found to be in good agreement with recent published data.

10.1103/physrevb.51.5473

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Evidence of localized luminescence centers in porous silicon

P. Basmaji Bohdan Matvienko Francisco Eduardo Gontijo Guimarães

Abstract The mechanism by which porous silicon luminesces when excited by UV radiation is still unknown. As opposed to de-localized models, proposed by other researchers, in which conduction band carriers are believed to recombine with traps during luminescence, we show evidence for and argue ha favour of a localized structure in which, on excitation, electrons are promoted to higher energy levels within a luminescence center but are not given up to the conduction band. Luminescence occurs when they relax to a lower level in the center.

Porous Silicon

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