Je-Sung Lee

Gwangju Institute of Science and Technology

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Kyung-Pil Kim

Chungbuk National University

Seung‐Hyun Mun

Gwangju Institute of Science and Technology

Hoe-Min Kwak

Electronics and Telecommunications Research Institute

Dong‐Seon Lee

Gwangju Institute of Science and Technology

Jungho Shin

Korea Research Institute of Chemical Technology

Woo‐Lim Jeong

Gwangju Institute of Science and Technology

Hyeon Jun Hwang

Korea Advanced Institute of Science and Technology

Jiyong Woo

Kyungpook National University

H. K. Park

Gwangju Institute of Science and Technology

Jong‐Il Kim

Seoul National University Hospital

Cooperative Institutions

Gwangju Institute of Science and Technology

Pohang University of Science and Technology

Samsung (South Korea)

Korea University

Electronics and Telecommunications Research Institute

Inha University

Yonsei University

Government College Kodanchery

Institut of Research in Solar Energy and New Energies

Gwangju University

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Advanced Graphene/Metal-Mesh Hybrid Transparent Electrodes via Ultraviolet (UV)–Ozone Treatment for UV-Range Optoelectronic Devices

ACS Applied Electronic Materials (2024)

Je-Sung Lee Jung‐Hong Min Kyung-Pil Kim Woo‐Lim Jeong Hoe-Min Kwak

The fabrication of advanced graphene/metal-mesh hybrid transparent electrodes (TEs) suitable for ultraviolet (UV)-range optoelectronic applications is reported herein, employing UV–ozone treatment. The UV–ozone treatment of transferred graphene is adopted to simultaneously enable oxidation doping and taint removal from the graphene surface and obtain the supplementary benefit of optical transmittance enhancement. Furthermore, the changes in the physical and chemical properties of graphene under different UV–ozone-treated times were characterized using Raman, X-ray/UV photoelectron spectroscopy, Hall measurements, and the transmission line method. Subsequently, hybrid structures combining various UV–ozone-treated graphene samples with a metal-mesh were tested as TEs in gallium nitride-based 375 nm near-UV light-emitting diodes (LEDs). Results indicate a noteworthy enhancement in light output power: a 48.3% increase relative to an untreated LED and an 18.3% increase compared to a conventional indium tin oxide (ITO)-based LED, particularly after 300 s of UV–ozone treatment. The present study provides a practical approach to overcome the limitations of existing ITO TEs for UV applications, thereby facilitating the future commercialization of graphene-based optoelectronic devices.

Ultraviolet

Indium tin oxide

10.1021/acsaelm.4c00652

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Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

Applied Physics A (2008)

Rui Dong D. S. Lee M. B. Pyun M. Hasan Hyejung Choi

Hysteresis

Rutile

Non-Volatile Memory

Resistive touchscreen

10.1007/s00339-008-4782-x

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Citations (39)

Hetero-device complementary resistive switches with high switch speed and reliability for cross point array applications

Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials (2011)

D. Lee J. Park S. Jung Gahyun Choi Je-Sung Lee

Resistive touchscreen

10.7567/ssdm.2011.f-8-2

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2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy

ACS Applied Materials & Interfaces (2023)

Hoe-Min Kwak Jong‐Il Kim Je-Sung Lee Jeongwoon Kim Jaeyoung Baik

The production of freestanding membranes using two-dimensional (2D) materials often involves techniques such as van der Waals (vdW) epitaxy, quasi-vdW epitaxy, and remote epitaxy. However, a challenge arises when attempting to manufacture freestanding GaN by using these 2D-material-assisted growth techniques. The issue lies in securing stability, as high-temperature growth conditions under metal–organic chemical vapor deposition (MOCVD) can cause damage to the 2D materials due to GaN decomposition of the substrate. Even when GaN is successfully grown using this method, damage to the 2D material leads to direct bonding with the substrate, making the exfoliation of the grown GaN nearly impossible. This study introduces an approach for GaN growth and exfoliation on 2D material/GaN templates. First, graphene and hexagonal boron nitride (h-BN) were transferred onto the GaN template, creating stable conditions under high temperatures and various gases in MOCVD. GaN was grown in a two-step process at 750 and 900 °C, ensuring exfoliation in cases where the 2D materials remained intact. Essentially, while it is challenging to grow GaN on 2D material/GaN using only MOCVD, this study demonstrates that with effective protection of the 2D material, the grown GaN can endure high temperatures and still be exfoliated. Furthermore, these results support that vdW epitaxy and remote epitaxy principle are not only possible with specific equipment but also applicable generally.

Exfoliation joint

10.1021/acsami.3c14076

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Citations (9)