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Anna Fontcuberta i Morral

École Polytechnique Fédérale de Lausanne

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Gözde Tütüncüoğlu

Wayne State University

Jordi Arbiol

Institut Català de Nanociència i Nanotecnologia

G. Abstreiter

Technical University of Munich

Martin Heiß

École Polytechnique Fédérale de Lausanne

Jean-Baptiste Leran

École Polytechnique Fédérale de Lausanne

Sònia Conesa-Boj

Delft University of Technology

Simon Escobar Steinvall

Lund University

Federico Matteini

École Polytechnique Fédérale de Lausanne

Martin Friedl

École Polytechnique Fédérale de Lausanne

Luca Francaviglia

Lawrence Berkeley National Laboratory

Cooperative Institutions

École Polytechnique Fédérale de Lausanne

Centre National de la Recherche Scientifique

Technical University of Munich

Schott (Germany)

University of Basel

ETH Zurich

École Polytechnique

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

University of Cambridge

Université Paris-Saclay

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Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

Chemical Reviews (2019)

Lucas Güniat Philippe Caroff Anna Fontcuberta i Morral

Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.

10.1021/acs.chemrev.8b00649

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Citations (181)

THz characterization of GeSn monocrystalline thin films

2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (2022)

Xinyun Liu Andrea Giunto Jake D. Hutchinson Nicolas Humblot Djamshid A. Damry

The employment of other group IV materials, such as alloys of germanium and tin, poses a solution for overcoming the efficiency limit of silicon that arises from its indirect bandgap. By using THz spectroscopy, the optoelectronic properties, such as conductivity, mobility, carrier lifetime, can be extracted non-invasively, since there is no electrical contact. In this work, we use optical pump-THz probe (OPTP) spectroscopy to examine the photoconductivity lifetime and mobility of GeSn alloy thin film samples with different Sn concentration. The results demonstrate photoconductivity lifetimes on nanosecond timescales and carrier mobilities in range of 40~210cm ² /(Vs), highlighting the promise of these thin films in device applications.

Photoconductivity

Electron Mobility

Nanosecond

10.1109/irmmw-thz50927.2022.9895959

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Citations (1)

Vectorial scanning force microscopy using a nanowire sensor

Nature Nanotechnology (2016)

N. Rossi Floris Braakman Davide Cadeddu Denis Vasyukov Gözde Tütüncüoğlu

Oscillation (cell signaling)

Electrostatic force microscope

Scanning Probe Microscopy

SIGNAL (programming language)

Piezoresponse force microscopy

10.1038/nnano.2016.189

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Prismatic Quantum Heterostructures Synthesized on Molecular‐Beam Epitaxy GaAs Nanowires

Anna Fontcuberta i Morral D. Spirkoska Jordi Arbiol M. Heigoldt J.R. Morante

GaAs nanowires are synthesized by molecular-beam epitaxy (MBE) without using gold as a nucleation seed. The synthesis can be tuned from 1D to 2D by changing the MBE growth conditions. This allows the deposition of quasi 1D quantum wells on the nanometer-wide facets of the nanowires, resulting in a prismatic geometry (see image).

Deposition

Nanometre

Chemical beam epitaxy

10.1002/smll.200701091

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Plasmonic Photodetectors

IEEE Journal of Selected Topics in Quantum Electronics (2018)

Alexander Dorodnyy Yannick Salamin Ping Ma Jelena Vukajlović Pleština Nolan Lassaline

Plasmonic photodetectors are attracting the attention of the photonics community. Plasmonics is attractive because metallic structures have the ability to confine light by coupling an electromagnetic wave to charged carrier oscillations at the surface of the metal. The wavelength of such oscillations can be much smaller than the corresponding light wavelength in vacuum. This enables the light-matter interaction on a deep subwavelength scale, which in turn allows for more compact and potentially higher speed devices. In this review, we discuss different types of photodetectors and ways in which plasmonics can be applied to them. We elucidate several plasmonic photodetector concepts/schemes and discuss the main physical principles behind their operation. Finally, we reflect on the characteristics of an “ideal” photodetector and propose a device that might be the perfect plasmonic detector.

10.1109/jstqe.2018.2840339

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The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Nanotechnology (2023)

Antonia Hager Lucas Güniat Nicholas Morgan Santhanu Panikar Ramanandan A. Rudra

Abstract Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom–up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on the growth masks. Electron beam lithography offers an extraordinary accuracy suited for the purpose. However, this technique is not economically viable for large production as it has a low throughput and requires high investment and operational costs. Nanoimprint lithography (NIL) has the potential to reduce fabrication time and costs significantly while requiring less sophisticated equipment. In this work, we utilize both thermal and UV NIL for patterning substrates for SAE, elucidating the advantages and disadvantages of each lithography technique. We demonstrate the epitaxial growth of Ge and GaAs NWs on these substrates, where we observe high-quality mono-crystalline structures. Even though both processes can produce small uniform structures suitable for SAE, our results show that UV NIL proves to be superior and enables reliable and efficient patterning of sub-100 nm mask features at the wafer scale.

Nanoimprint lithography

Next-generation lithography

Stencil lithography

10.1088/1361-6528/acea87

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Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Zenodo (CERN European Organization for Nuclear Research) (2019)

Mattias Jansson Luca Francaviglia Rui La R M Balagula Jan Eric Stehr

Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N content of 0.08%, these defects are found to promote non-radiative (NR) recombination, which causes spatial variation of the CL peak position and its intensity. Unexpectedly, these detrimental effects can be suppressed even by a small increase in the nitrogen composition from 0.08% to 0.12%. This is attributed to more efficient trapping of excited carriers/excitons to the localized states promoted by N-induced localization and also the presence of other NR channels. At room temperature, the structural defects no longer dominate in carrier recombination even in the NWs with the lower nitrogen content, likely due to increasing importance of other recombination channels. Our work underlines the need in eliminating important thermally activated NR defects, other than the structural defects, for future optoelectronic applications of these NWs.

10.5281/zenodo.4004376

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Lateral alumina templates for carbon nanotubes and semiconductor nanowires synthesis

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2005)

Didier Pribat Costel‐Sorin Cojocaru Jean Marie Padovani Travis L. Wade Corrado Mandoli

We present here, a novel approach for the membrane-based synthesis, also called template synthesis of arrays of nanomaterials with monodispersed geometrical features. The basic principle is to grow or generate the desired material inside the pores of a nanoporous alumina membrane. The pores of are synthesised parallel to the surface of the substrate by performing the anodic oxidation of an aluminium thin film laterally, i.e. parallel to the surface of the substrate, instead of perpendicular as usually done. We obtain highly regular and ordered pore arrays, with a minimum pore size in the range of ~3 to 4 nm, which to the best of our knowledge is the smallest reported to date for anodic alumina membranes. After anodic oxidation, the pores of the lateral alumina membranes have been electrochemically "filled" with Te nanowires. Such porous alumina structures may allow to control the in-plane organisation of arrays of template-grown nanowires and carbon nanotubes for reproducible device fabrication.

Nanoporous

Nanomaterials

Template

10.1117/12.583350

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Hybrid Semiconductor Nanowire–Metallic Yagi-Uda Antennas

Nano Letters (2015)

Mohammad Ramezani Alberto Casadei Grzegorz Grzela Federico Matteini Gözde Tütüncüoğlu

We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with the microscope the photoluminescence of the hybrid structure as a function of the emission angle by imaging the back focal plane of the objective. The precise tuning of the dimensions of the metallic elements of the nanoantenna leads to a strong variation of the directionality of the emission, being able to change this emission from backward to forward. We explain the mechanism leading to this directional emission by finite difference time domain simulations of the scattering efficiency of the antenna elements. These results cast the first step toward the realization of electrically driven optical Yagi-Uda antenna emitters based on semiconductors nanowires.

Light emission

10.1021/acs.nanolett.5b00565

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Citations (39)

Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials

Zenodo (CERN European Organization for Nuclear Research) (2019)

Mario Negri Luca Francaviglia Dumitru Dumcenco Matteo Bosi Daniel Kaplan

Two-dimensional semiconductors, in particular transition metal dichalcogenides and related heterostructures, have gained increasing interest as they constitute potential new building blocks for the next generation of electronic and optoelectronic applications. In this work, we develop a novel nondestructive and noncontact technique for mapping the absorption properties of 2D materials, by taking advantage of the underlying substrate cathodoluminescence emission. We map the quantitative absorption of MoS₂ and MoSe₂ monolayers, obtained on sapphire and oxidized silicon, with nanoscale resolution. We extend our technique to the characterization of the absorption properties of MoS₂/MoSe₂ van der Waals heterostructures. We demonstrate that interlayer excitonic phenomena enhance the absorption in the UV range. Our technique also highlights the presence of defects such as grain boundaries and ad-layers. We provide measurements on the absorption of grain boundaries in monolayer MoS₂ at different merging angles. We observe a higher absorption yield of randomly oriented monolayers with respect to 60° rotated monolayers. This work opens up a new possibility for characterizing the functional properties two-dimensional semiconductors at the nanoscale. This dataset contains some of the raw data for Figures 1 and 2.

10.5281/zenodo.4010559

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