Haibo Gan

Shenzhen University

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Liu Fei

Hebei GEO University

Shaozhi Deng

Sun Yat-sen University

Ningsheng Xu

Sun Yat-sen University

Jun Chen

Sun Yat-sen University

Wenjing Zhang

Yantai Institute of Coastal Zone Research

Qiaoyan Hao

Shenzhen University

Tongyi Guo

Southwestern University of Finance and Economics

Luxi Peng

Sun Yat-sen University

Yan Tian

Qilu University of Technology

Xun Yang

Yangzhou University

Cooperative Institutions

Sun Yat-sen University

Shenzhen University

Chinese Academy of Sciences

Southern University of Science and Technology

University of Science and Technology of China

Key Laboratory of Guangdong Province

University of Electronic Science and Technology of China

Central South University

Harbin Institute of Technology

Fudan University

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Surface-induced positive planar Hall effect in topological Kondo insulator SmB6 microribbons

Physical review. B./Physical review. B (2019)

Liang Zhou B. C. Ye Haibo Gan Jiangke Tang P. B. Chen

Whether the surface states in ${\mathrm{SmB}}_{6}$ are topological is still a critical issue in the field of topological Kondo insulators. In the magneto-transport study of single crystalline ${\mathrm{SmB}}_{6}$ microribbons, we have revealed a positive planar Hall effect (PHE), the amplitude of which increases dramatically with decreasing temperatures but saturates below 5 K. This positive PHE is ascribed to the surface states of ${\mathrm{SmB}}_{6}$ and is expected to arise from the anisotropy in lifting the topological protection from backscattering by the in-plane magnetic field, thus suggesting the topological nature of surface states in ${\mathrm{SmB}}_{6}$. On the contrary, a negative PHE is observed for the bulk states at high temperatures, which is almost three orders of magnitudes weaker than the surface-induced positive PHE.

Topological insulator

10.1103/physrevb.99.155424

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Citations (16)

Maximum field emission current density of CuO nanowires: theoretical study using a defect-related semiconductor field emission model and in situ measurements

Scientific Reports (2018)

Zufang Lin Peng Zhao Peng Ye Yicong Chen Haibo Gan

Abstract In this study, we proposed a theoretical model for one-dimensional semiconductor nanowires (NWs), taking account of the defect-related electrical transport process. The maximum emission current density was calculated by considering the influence of Joule heating, using a one-dimensional heat equation. The field emission properties of individual CuO NWs with different electrical properties were studied using an in situ experimental technique. The experimental results for maximum emission current density agreed well with the theoretical predictions and suggested that multiple conduction mechanisms were active. These may be induced by the concentration of defects in the CuO NW. The concentration of defects and the transport mechanisms were found to be key factors influencing the maximum field emission current density of the semiconductor NW. As is limited by the change of resistivity with temperature, only thermal runaway can trigger breakdown in CuO NWs.

Joule effect

10.1038/s41598-018-20575-y

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Citations (14)

Investigation on the photoconductive behaviors of an individual AlN nanowire under different excited lights

Nanoscale Research Letters (2012)

Liu Fei Li-Fang Li Tongyi Guo Haibo Gan Xiaoshu Mo

Ultra-long AlN nanowire arrays are prepared by chemical vapor deposition, and the photoconductive performances of individual nanowires are investigated in our self-built measurement system. Individual ultra-long AlN nanowire (UAN) exhibits a clear photoconductive effect under different excited lights. We attribute the positive photocurrent response of individual UAN to the dominant molecular sensitization effect. It is found that they have a much faster response speed (a rise and decay time of about 1 ms), higher photocurrent response (2.7×106), and more reproductive working performance (the photocurrent fluctuation is lower than 2%) in the air environment. Their better photoconductive performances are comparable to many nanostructures, which are suggested to be a candidate for building promising photosensitive nanodevices in the future.

Photoconductivity

Photocurrent

Nanochemistry

10.1186/1556-276x-7-454

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Citations (27)

Controllable synthesis of Gd-doped SmB6 nanobelt arrays for modulating their surface transport behaviors

Materials Today Nano (2020)

Haibo Gan B. Ye Liang Zhou T. Zhang Yuanxin Tian

Magnetism

Surface States

Topological insulator

10.1016/j.mtnano.2020.100097

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Citations (2)

Cheap, Gram-Scale Fabrication of BN Nanosheets via Substitution Reaction of Graphite Powders and Their Use for Mechanical Reinforcement of Polymers

Scientific Reports (2014)

Liu Fei Xiaoshu Mo Haibo Gan Tongyi Guo Xuebin Wang

Abstract As one of the most important two-dimensional (2D) materials, BN nanosheets attracted intensive interest in the past decade. Although there are many methods suitable for the preparation of BN sheets, finding a cheap and nontoxic way for their mass and high-quality production is still a challenge. Here we provide a highly effective and cheap way to synthesize gram-scale-level well-structured BN nanosheets from many common graphite products as source materials. Single-crystalline multi-layered BN sheets have a mean lateral size of several hundred nanometers and a thickness ranging from 5 nm to 40 nm. Cathodoluminescence (CL) analysis shows that the structures exhibit a near band-edge emission and a broad emission band from 300 nm to 500 nm. Utilization of nanosheets for the reinforcement of polymers revealed that the Young's modulus of BN/PMMA composite had increased to 1.56 GPa when the BN's fraction was only 2 wt.%, thus demonstrating a 20% gain compared to a blank PMMA film. It suggests that the BN nanosheet is an ideal mechanical reinforcing material for polymers. In addition, this easy and nontoxic substitution method may provide a universal route towards high yields of other 2D materials.

Nanosheet

Nanometre

Nanomaterials

Cathodoluminescence

10.1038/srep04211

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Citations (49)

Changes in the photoluminescence of ultra-weak interlayer coupled MoSe2/PbI2 van der Waals heterostructures

Applied Physics Letters (2023)

Di Wu Junzi Li Qiaoyan Hao Wenzhe Zhou Zhuo Wang

Photo-generated dynamics have been extensively studied in two-dimensional (2D) heterostructures, such as MoSe2/WSe2 and MoSe2/MoS2. Here, we fabricate few-layer PbI2 and monolayer MoSe2 van der Waals (vdW) heterostructures. The excited-wavelength dependent measurements of photoluminescence (PL) and transient dynamic absorption spectra show that there is almost no photo-generated charge transfer between PbI2 and MoSe2. PL changes of MoSe2 are rather dominated by the Fermi level (EF) modulation through the interlayer charge transfer. Density functional theory calculation shows that binding energies in the heterostructures of MoSe2/WSe2 or MoSe2/MoS2 are 2–3 times higher than that of the MoSe2/PbI2 heterostructure, suggesting the weaker interlayer coupling between MoSe2 and PbI2. We propose that the weak interlayer vdW coupling cannot drive the photo-generated interlayer charge transfer while the EF modulation can be achieved through the interlayer charge transfer. The findings will be helpful to fundamental research and applications for novel optoelectronic devices based on 2D material vdW heterostructures.

10.1063/5.0141793

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Citations (1)

Bandgap Engineering of Ternary ε‐InSe₁₋_xS_x and ε‐InSe₁₋_yTe_y Single Crystals for High‐Performance Electronics and Optoelectronics

Advanced Optical Materials (2022)

Qiaoyan Hao Huan Yi Jidong Liu Yi Wang Jiewei Chen

Abstract Alloying offers an efficient strategy to tune the bandgap of two‐dimensional (2D) layered materials, enabling them to tailor the optical and electronic attributes without compromising the structural integrity. Here the authors report the synthesis of a series of ternary InSe 1− x S x and InSe 1− y Te y alloys possessing ε‐polymorph and single crystalline structure. Both the photoluminescence and Raman spectra of multilayer InSe 1− x S x and InSe 1− y Te y demonstrate that an effective modulation of bandgap and concomitant optical properties is achieved by tuning the alloy compositions, consistent with density functional theory calculations. Field‐effect transistors fabricated from the multilayer alloys on SiO 2 dielectric substrates display electron field‐effect mobilities of up to ≈127 cm 2 V −1 s −1 . All the multilayer alloy devices show a high current on/off ratio of ≈10 8 . When fabricated into photodetectors, multilayer InSe 0.9 S 0.1 and InSe 0.9 Te 0.1 exhibit maximum photoresponsivities of 5.4 × 10 5 and 7.7 × 10 4 A W −1 , respectively. Moreover, the InSe 1− y Te y alloys are able to expand the photoresponse range into 1250 nm due to the bandgap narrowing upon Te alloying. This work sheds light on rationally designing 2D layered InSe with tunable bandgaps via alloying, and demonstrates their promising applications in electronics and optoelectronics.

10.1002/adom.202200063

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Citations (6)

Growth and field emission performance of micro-patterned boron nanowire arrays

Haibo Gan Liu Fei Shunyu Jin Tongyi Guo Shaozhi Deng

Boron nanowire micro-patterns are prepared by CVD method. Ni film is chosen to be the catalyst for fabrication of boron nanowires. Patterned boron nanowires are found to have relatively lower turn-on field and good emission uniformity, which should have a promising future in FED area.

10.1109/ivnc.2014.6894800

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Citations (0)

A moderate synthesis route of 5.6 mA-current LaB₆ nanowire film with recoverable emission performance towards cold cathode electron source applications

RSC Advances (2017)

Haibo Gan Luxi Peng Xun Yang Yan Tian Ningsheng Xu

The as-grown LaB₆ nanowire arrays still remain a very large and stable emission current density over 16.7 mA cm⁻² at high temperature as well as recoverable emission performances, which should have promising future in cold cathode electron sources.

Cold cathode

10.1039/c7ra01637a

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Citations (20)

Strong Interlayer Transition in Few‐Layer InSe/PdSe₂ van der Waals Heterostructure for Near‐Infrared Photodetection

Advanced Functional Materials (2021)

Waqas Ahmad Jidong Liu Jizhou Jiang Qiaoyan Hao Di Wu

Abstract Near infrared (NIR) photodetectors based on 2D materials are widely studied for their potential application in next generation sensing, thermal imaging, and optical communication. Construction of van der Waals (vdWs) heterostructure provides a tremendous degree of freedom to combine and extend the features of 2D materials, opening up new functionalities on photonic and optoelectronic devices. Herein, a type‐II InSe/PdSe 2 vdWs heterostructure with strong interlayer transition for NIR photodetection is demonstrated. Strong interlayer transition between InSe and PdSe 2 is predicted via density functional theory calculation and confirmed by photoluminance spectroscopy and Kelvin probe force microscopy. The heterostructure exhibits highly sensitive photodetection in NIR region up to 1650 nm. The photoresponsivity, detectivity, and external quantum efficiency at this wavelength respectively reaches up to 58.8 A W −1 , 1 × 10 10 Jones, and 4660%. The results suggest that the construction of vdWs heterostructure with strong interlayer transition is a promising strategy for infrared photodetection, and this work paves the way to developing high‐performance optoelectronic devices based on 2D vdWs heterostructures.

Photodetection

Quantum Efficiency

10.1002/adfm.202104143

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Citations (100)