E. Borovitskaya

Rensselaer Polytechnic Institute

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Trends

Author Order

Document Type

Co-Authors

M. S. Shur

Rensselaer Polytechnic Institute

V. M. Genkin

Hebrew University of Jerusalem

W. Knap

Institute of High Pressure Physics

R. Gaška

Sensor Electronic Technology (United States)

G. Simin

University of South Carolina

I. Grzegory

Institute of High Pressure Physics

M. E. Levinshteǐn

Ioffe Institute

C. Skierbiszewski

Polish Academy of Sciences

P. Lorenzini

Polytech Lille

P. Prystawko

Institute of High Pressure Physics

Cooperative Institutions

Centre National de la Recherche Scientifique

Russian Academy of Sciences

Polish Academy of Sciences

Institute of Solid State Physics

University of Würzburg

Rensselaer Polytechnic Institute

Institute of High Pressure Physics

Physico-Technical Institute

Université de Montpellier

University of South Carolina

Author Statistics

Papers

Citation

H-Index

i-10 index

Research Field

High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates

MRS Proceedings (2000)

W. Knap E. Borovitskaya M. S. Shur R. Gaška G. Karczewski

Cyclotron resonance

Electron cyclotron resonance

Landau quantization

Shubnikov–de Haas effect

10.1557/proc-639-g7.3

Cite

Citations (3)

Nonlinear microwave response of YBaCuO superconducting film

JETP (1996)

E. Borovitskaya V. M. Genkin G. I. Leviev

Source

Cite

Citations (5)

LOW-DIMENSIONAL SYSTEMS

Selected topics in electornics and systems (2002)

E. Borovitskaya M. S. Shur

10.1142/9789812777676_0001

Cite

Citations (3)

Consequences of space dependence of effective mass in quantum wires

Solid-State Electronics (2000)

E. Borovitskaya M. S. Shur

Reduced mass

Impact ionization

10.1016/s0038-1101(00)00006-x

Cite

Citations (5)

The thin-film disk and ring shaped type II superconductors in perpendicular magnetic fields

IEEE Transactions on Applied Superconductivity (1997)

E. Borovitskaya V. M. Genkin G. I. Leviev

Properties of small, thin-film, disk-shaped and ring-shaped superconductors in the presence of perpendicular magnetic fields were considered within the framework of a model that takes into account the difference between magnetic induction and vortex density, vortex movement, and generation of vortices if current density exceeded its critical value. The linear complex magnetic susceptibility of a ring was calculated. It was shown that the distribution of the dissipative current differed considerably from the reactive one. The influence of the edge barrier on the form of the hysteresis loop, and current and field patterns for the ring in the critical state were shown.

Type-II superconductor

Hysteresis

10.1109/77.620731

Cite

Citations (2)

Low frequency noise in degenerate semiconductors

Journal of Applied Physics (2001)

А. П. Дмитриев E. Borovitskaya M. E. Levinshteǐn S. L. Rumyantsev M. S. Shur

We present a model of low frequency noise for degenerate semiconductors. The model links the 1/f noise to tail states near the band edges with a capture cross section that is strongly energy dependent. It predicts that the low frequency noise is not very sensitive to a particular shape of the density of the tail states and that, in degenerate semiconductors, the level of noise should decrease with an increase in the degree of degeneracy. The model also explains the dependence of the noise level on the band-to-band illumination, in qualitative agreement with experimental data.

Degeneracy (biology)

Degenerate semiconductor

10.1063/1.1379556

Cite

Citations (10)

Fine Structure of Biexciton Emission in Symmetric and Asymmetric CdSe/ZnSe Single Quantum Dots

Physical Review Letters (1999)

V. D. Kulakovskiĭ G. Bacher R. Weigand T. Kümmell A. Forchel

The influence of quantum dot (QD) asymmetry on the emission of single three-dimensionally confined biexcitons in II-VI semiconductor nanostructures has been studied by magnetophotoluminescence spectroscopy. Investigating both the biexciton and the single-exciton transition in the same single QD, we obtain a unified picture of the impact of electron-hole exchange interaction on the fine structure and the polarization properties of optical transitions in QDs. The exchange splitting is demonstrated to have a strong influence on the derivation of the biexciton binding energy, which we determine to be about 17 meV, much less than the separation between exciton and biexciton lines ( $\ensuremath{\approx}24$ meV) in the spectra.

Biexciton

Exchange interaction

10.1103/physrevlett.82.1780

Cite

Citations (382)

Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures

MRS Proceedings (2000)

E. Borovitskaya W. Knap M. S. Shur R. Gaška Éric Frayssinet

Electron Mobility

10.1557/proc-639-g7.5

Cite

Citations (2)