The possibility of the electroluminophore semiconductors of the II-VI group to the construction of the electric field intensity sensors are presented. Using ZnS:Mn and ZnS:Cu luminophors, the fiber optic intensity of electric field sensors were elaborated. This kind of electric field sensors belong to the group of intensity fiber optic sensors. Electroluminescent phenomena of two groups pf electroluminescent effects are classified as: 1) internal electroluminescence and 2) carrier-injection electroluminescence. In the paper there are described sensors based on carrier-electric injection electroluminescence.
