R. L. Woodin

Global Power Technologies Group (United States)

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David S. Bomse

SA Photonics (United States)

A. Kaldor

Power+Energy (United States)

J. L. Beauchamp

California Institute of Technology

Tony Witt

Global Power Technologies Group (United States)

Gary W. Rice

Williams (United States)

J. Shovlin

Fairchild Semiconductor (United States)

Jon S. Gethner

ExxonMobil (United States)

Rahul Radhakrishnan

National Institute of Technology Calicut

Paul Seidler

IBM Research - Zurich

Gary M. Dolny

Scientific Consulting Group

Cooperative Institutions

ExxonMobil (United States)

Fairchild Semiconductor (United States)

The Ohio State University

European Organization for Nuclear Research

Centre National de la Recherche Scientifique

Ohio University

California Institute of Technology

Institut National de Physique Nucléaire et de Physique des Particules

Pennsylvania State University

Princeton University

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Increase of SiC Substrate Resistance Induced by Annealing

Materials science forum (2010)

Thomas L. Straubinger R. L. Woodin Tony Witt J. Shovlin Gary M. Dolny

We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing.

10.4028/www.scientific.net/msf.645-648.223

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Citations (14)

Applications of lasers to chemical processing

Proceedings of the IEEE (1982)

A. Kaldor R. L. Woodin

Some of the important underlying scientific aspects of photochemical and photothermal processes are reviewed. The discussion concentrates on those areas of laser chemistry which offer a considerable potential for commercial applicaion and examples are selected which illustrate this. Thus this paper is not a comprehensive review of current research in laser chemistry. Specific subjects treated include laser isotope separation, purification, chemical synthesis, laser pyrolysis, laser production of novel materials, laser-initiated chain reactions, laser control of electronic effects, and laser chemistry at surfaces.

10.1109/proc.1982.12355

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Citations (18)

Silicon carbide in a silicon world: introducing wide band gap semiconductor production into a silicon fab

J. Shovlin R. L. Woodin Tony Witt

The Advanced Materials Group has been tasked with bringing silicon carbide (SiC) device production into an existing silicon fab. The goal is to develop processes maximizing utilization of the existing silicon fab infrastructure. This paper will discuss some of the challenges being faced in this task, and how the group is addressing them. While the processes used to fabricate SiC devices are similar to those used to fabricate silicon devices, there are several important differences.

Hybrid silicon laser

10.1109/asmc.2004.1309608

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Citations (2)

Synthesis of Large Area Diamond Films By A Low Pressure DC Plasma Jet

Materials science monographs (1991)

R. L. Woodin Louis K. Bigelow Gordon L. Cann

10.1016/b978-0-444-89162-4.50070-1

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Citations (4)

Dissociative equilibriums of vapor-phase bis[uranyl bis(hexafluoroacetonylacetate)] and uranyl bis(hexafluoroacetylacetonate) tetrahydrofuran

The Journal of Physical Chemistry (1981)

R. L. Woodin D. M. Cox R. B. Hall A. Kaldor

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTDissociative equilibriums of vapor-phase bis[uranyl bis(hexafluoroacetonylacetate)] and uranyl bis(hexafluoroacetylacetonate) tetrahydrofuranR. L. Woodin, D. M. Cox, R. B. Hall, and A. KaldorCite this: J. Phys. Chem. 1981, 85, 20, 2898–2903Publication Date (Print):October 1, 1981Publication History Published online1 May 2002Published inissue 1 October 1981https://pubs.acs.org/doi/10.1021/j150620a010https://doi.org/10.1021/j150620a010research-articleACS PublicationsRequest reuse permissionsArticle Views16Altmetric-Citations6LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access options Get e-Alerts

Uranyl

Tetrahydrofuran

10.1021/j150620a010

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Citations (6)

Binding of lithium(1+) ion to Lewis bases in the gas phase. Reversals in methyl substituent effects for different reference acids

Journal of the American Chemical Society (1978)

R. L. Woodin J. L. Beauchamp

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTBinding of lithium(1+) ion to Lewis bases in the gas phase. Reversals in methyl substituent effects for different reference acidsR. L. Woodin and J. L. BeauchampCite this: J. Am. Chem. Soc. 1978, 100, 2, 501–508Publication Date (Print):January 1, 1978Publication History Published online1 May 2002Published inissue 1 January 1978https://pubs.acs.org/doi/10.1021/ja00470a024https://doi.org/10.1021/ja00470a024research-articleACS PublicationsRequest reuse permissionsArticle Views307Altmetric-Citations202LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail Other access optionsGet e-Alertsclose Get e-Alerts

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10.1021/ja00470a024

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Citations (213)

The Impact of Schottky Barrier Tunneling on SiC-JBS Performance

Materials science forum (2009)

Gary M. Dolny R. L. Woodin Tony Witt J. Shovlin

The impact of barrier tunneling on SiC-JBS performance is studied both experimentally and theoretically. We show that although the pinch-off effects associated with the JBS structure can significantly suppress the surface electric field, barrier tunneling still dominates the reverse behavior. Barrier tunneling determines the apparent breakdown voltage, as well as the apparent breakdown voltage vs. forward voltage drop trade-off of the JBS diode in practical applications.

Metal–semiconductor junction

Voltage drop

10.4028/www.scientific.net/msf.615-617.667

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Citations (2)

Recent Advances in IR Laser Chemistry

Laser Chemistry (1983)

A. Kaldor R. L. Woodin Richard B. Hall

10.1155/lc.2.335

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Citations (1)

MULTIPHOTON DISSOCIATION OF GAS PHASE IONS USING LOW INTENSITY CW LASER RADIATION