Yean‐Woei Kiang

National Taiwan University

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C. C. Yang

University of Science and Technology of China

185

Chieh Hsieh

National Taiwan University

Charng-Gan Tu

National Taiwan University

Yang Kuo

National Taiwan University

Yufeng Yao

University of the West of England

Chia-Ying Su

National Taiwan University

Chun-Han Lin

National Taiwan Ocean University

Hao-Tsung Chen

National Taiwan University

Horng-Shyang Chen

National Taiwan University

Che‐Hao Liao

King Abdullah University of Science and Technology

Cooperative Institutions

National Taiwan University

196

National Yang Ming Chiao Tung University

National Tsing Hua University

National Cheng Kung University

University of Illinois Urbana-Champaign

National Central University

National Taiwan University of Science and Technology

University of Illinois Chicago

Industrial Technology Research Institute

National Sun Yat-sen University

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Dependencies of the emission behavior and quantum well structure of a regularly-patterned, InGaN/GaN quantum-well nanorod array on growth condition

Optics Express (2014)

Che‐Hao Liao Charng-Gan Tu Wen-Ming Chang Chia-Ying Su Pei-Ying Shih

To achieve green emission from the sidewall non-polar quantum wells (QWs) of a GaN nanorod (NR) light-emitting diode, regularly patterned InGaN/GaN QW NR arrays are grown under various growth conditions of indium supply rate, QW growth temperature, and QW growth time for comparing their emission wavelength variations of the top-face c-plane and sidewall m-plane QWs based on photoluminescence and cathodoluminescence (CL) measurements. Although the variation trends of QW emission wavelength by changing those growth conditions in the NR structure are similar to those in the planar structure, the emission wavelength range of the QWs on an NR is significantly shorter than that in a planar structure under the same growth conditions. Under the growth conditions for a longer NR QW emission wavelength, the difference of emission wavelength between the top-face and sidewall QWs is smaller. Also, the variation range of the emission wavelength from the sidewall QWs over different heights on the sidewall becomes larger. On the other hand, strain state analysis based on transmission electron microscopy is undertaken to calibrate the average QW widths and average indium contents in the two groups of QW of an NR. The variation trends of the calibrated QW widths and indium contents are consistent with those of the CL emission wavelengths from various portions of NR QWs.

Cathodoluminescence

Nanorod

10.1364/oe.22.017303

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Citations (18)

<title>Optical anisotropy characteristics of skeletal muscle tissues</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2002)

Chia‐Wei Sun C. C. Yang Yean‐Woei Kiang

To explore the polarization-dependent optical properties of skeletal muscle tissues, we calibrated the extinction coefficients of the polarization components parallel with and perpendicular to chicken breast tissue filaments and the cross-polarized intensity coupling coefficients between the two polarization components, based on the measured quasi- coherent photons. The calibrated values of these coefficients were quite consistent with previously reported. The extinction coefficient in the polarization along tissue filaments was significantly higher than that of the other polarization. Also, the cross-polarized coupling coefficient of the coupling from the polarization of tissue filaments into the other was stronger than that of inverse coupling.

Molar absorptivity

Extinction ratio

10.1117/12.472523

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Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure

IEEE Transactions on Electron Devices (2016)

Hao-Tsung Chen Chia-Ying Su Charng-Gan Tu Yu‐Feng Yao Chun-Han Lin

p-GaN/u-GaN alternating-layer nanostructures are grown with molecular beam epitaxy to show a low p-type resistivity level of 0.038 Ω-cm. The obtained low resistivity is due to the high hole mobility in the u-GaN layers, which serve as effective transport channels of holes diffused from the neighboring p-GaN layers. The Mg doping in a thin p-GaN layer can lead to a high Mg-doping concentration for supplying holes to the neighboring u-GaN layers. Simulations based on a 1-D drift diffusion charge control model and the Brooks-Herring theory of ionized impurity scattering are undertaken to first obtain the depth-dependent distributions of hole concentration, mobility, and, hence, resistivity. Then, weighted averaging processes are used for evaluating the effective hole concentration, mobility, and resistivity of a p-GaN/u-GaN alternating-layer nanostructure to give consistent results with the measured data.

Electron Mobility

Wide-bandgap semiconductor

10.1109/ted.2016.2631148

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Behaviors of Surface Plasmon Coupled Light-Emitting Diodes Induced by Surface Ag Nanoparticles on Dielectric Interlayers

Plasmonics (2015)

Chun-Han Lin Chung-Hui Chen Yufeng Yao Chia-Ying Su Pei-Ying Shih

Localized surface plasmon

10.1007/s11468-015-9902-9

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Citations (11)

Image Reconstruction for an Imperfectly Conducting Cylinder Buried in a Half Space

Journal of Electromagnetic Waves and Applications (1992)

Chien‐Ching Chiu Yean‐Woei Kiang

The inverse scattering of a buried imperfectly conducting cylinder is investigated. Assume that a conducting cylinder of unknown shape and conductivity is buried in one half-space and scatters the field incident from another half-space where the scattered field is measured. By giving the scattered field, we can reconstruct both the shape and the conductivity of the object. The Newton-Kantorovitch algorithm and the moment method are used to transform the nonlinear integral equations into matrix form. Then these matrix equations are solved by the pseudoinverse transformation to obtain a stable approximate solution. In addition, the condition number of the matrix is also discussed. Computer simulations show that with multiple incident directions good reconstruction of shape and, to a lesser extent, conductivity is obtained even in the presence of noise in measured data.

Moore–Penrose pseudoinverse

Matrix (chemical analysis)

10.1163/156939392x01859

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Absorption enhancement of an amorphous Si solar cell through surface plasmon-induced scattering with metal nanoparticles

Optics Express (2010)

Fu-Ji Tsai Jyhpyng Wang Jeng-Jie Huang Yean‐Woei Kiang C. C. Yang

The simulation results of absorption enhancement in an amorphous-Si (a-Si) solar cell by depositing metal nanoparticles (NPs) on the device top and embedding metal NPs in a layer above the Al back-reflector are demonstrated. The absorption increase results from the near-field constructive interference of electromagnetic waves in the forward direction such that an increased amount of sunlight energy is distributed in the a-Si absorption layer. Among the three used metals of Al, Ag, and Au, Al NPs show the most efficient absorption enhancement. Between the two used NP geometries, Al nanocylinder (NC) are more effective in absorption enhancement than Al nanosphere (NS). Also, a random distribution of isolated metal NCs can lead to higher absorption enhancement, when compared with the cases of periodical metal NC distributions. Meanwhile, the fabrication of both top and bottom Al NCs in a solar cell results in further absorption enhancement. Misalignments between the top and bottom Al NCs do not significantly reduce the enhancement percentage. With a structure of vertically aligned top and bottom Al NCs, solar cell absorption can be increased by 52%.

10.1364/oe.18.00a207

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Citations (78)

Surface plasmon coupling in a deep-UV light-emitting diode with an embedded Al nanoparticle

2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) (2015)

Yang Kuo C. C. Yang Yean‐Woei Kiang

The radiated power enhancement (suppression) of a c-plane (c-axis) oriented radiating dipole at a given emission wavelength in the quantum well of a c-plane, deep-UV light-emitting diode (LED) when it is coupled with a surface plasmon (SP) resonance mode induced on a nearby Al nanoparticle (NP) is demonstrated. Also, the enhanced radiated power mainly propagates in the direction from the Al NP toward the dipole. Such SP coupling behaviors can be used for suppressing the TM-polarized emission, enhancing the TE-polarized emission, and reducing the UV absorption of the p-GaN layer in such a deep-UV LED.

Localized surface plasmon

10.1109/nusod.2015.7292816

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Sapphire Substrate Liftoff With Photoelectrochemical Etching for Vertical Light-Emitting Diode Fabrication

IEEE Photonics Technology Letters (2011)

Cheng-Hung Lin Chih‐Yen Chen Che‐Hao Liao Chieh Hsieh Yean‐Woei Kiang

The method of sapphire substrate liftoff for the fabrication of vertical nitride light-emitting diode (LED), based on the combination of the photoelectrochemical (PEC) etching and epitaxial lateral overgrowth (ELOG) techniques, is demonstrated. This method relies on the formation of connected voids during the ELOG process on a GaN template such that PEC electrolyte can approach the GaN portions above the SiO ₂ masks. Also, the GaN template must be thin enough for the illuminating ultraviolet light to reach the GaN portions above the SiO ₂ masks. It is shown that PEC etching starts from a very thin layer of GaN right above a SiO ₂ mask. It then extends into the window regions of ELOG to completely separate GaN from sapphire. The performances of a vertical LED are illustrated.

10.1109/lpt.2011.2121899

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Citations (12)

Performance Analysis of a Radar Target Discrimination Technique

林茂昭江衍偉 Mao‐Chao Lin Yean‐Woei Kiang

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Polarity Control in Growing Highly Ga-Doped ZnO Nanowires with the Vapor–Liquid–Solid Process

ACS Applied Materials & Interfaces (2018)

Yu‐Feng Yao Keng-Ping Chou Huang-Hui Lin Chi‐Chung Chen Yean‐Woei Kiang

Surface behavior modification by forming surface-transparent conductive nanowires (NWs) is an important technique for many applications, particularly when the polarities of the NWs can be controlled. The polarities of Ga-doped ZnO (GaZnO) NWs grown on templates of different polarities under different growth conditions are studied for exploring a polarity control growth technique. The NWs are formed on Ga- and N-face GaN through the vapor-liquid-solid (VLS) process using Ag nanoparticles as growth catalyst. The NWs grown on templates of different polarities under the Zn- (O-) rich conditions are always Zn (O) polar. During the early stage of NW growth, because the lattice sizes among different nucleation islands formed at the triple-phase line are quite different, high-density planar defects are produced when lateral growths from multiple nucleation islands form a GaZnO double bilayer. In this situation, frequent domain inversions occur, and GaZnO polarity is unstable. Under the Zn- (O-) rich conditions, because the lateral growth rate of GaZnO in the Zn- (O-) polar structure is higher due to more available dangling bonds, the growth of the Zn- (O-) polar structure dominates NW formation such that the NW eventually becomes Zn (O) polar irrespective of the polarity of the growth template. Therefore, the polarity of a doped-ZnO NW can be controlled simply by the relative supply rates of Zn and O during VLS growth.

Polarity (international relations)

Dangling bond

Vapor–liquid–solid method

Template

10.1021/acsami.8b13859

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Citations (12)