R.M. Swanson

SunPower (Germany)

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Ronald A. Sinton

Sinton Instruments

Jesús A. del Alamo

Massachusetts Institute of Technology

Pierre Verlinden

UNSW Sydney

Young Kwark

University of Denver

S.E. Swirhun

Honeywell (United States)

R.A. Crane

University of South Florida

Richard R. King

Arizona State University

Krishna C. Saraswat

Stanford University

D.E. Kane

Brigham Young University

Marcy Barge

Montana State University

Cooperative Institutions

Stanford University

Massachusetts Institute of Technology

Harvard University

Centre National de la Recherche Scientifique

National Renewable Energy Laboratory

University of California, Los Angeles

Beth Israel Deaconess Medical Center

Indiana University – Purdue University Indianapolis

Indiana University School of Medicine

The University of Texas Health Science Center at San Antonio

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The BB&Y Zero Energy House: Report on the Second Year of Operation and Performance Analysis

SSRN Electronic Journal (2023)

R.M. Swanson

BB&Y LLC has performed a deep energy retrofit on a house in Redwood City, California. The purpose of the project is to go beyond net zero energy and explore how a house can operate with zero greenhouse gas emissions. This paper is a follow-on to a previous paper entitled THE BB&Y ZERO ENERGY HOUSE: REPORT ON THE FIRST YEAR OF OPERATION.1 That paper described the project design and the results from the first year of operation. During the second year of operation various modeling and experimental activities took place to better understand the energy flows with the aim of improving performance. These are covered in this paper.

Zero (linguistics)

10.2139/ssrn.4395811

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Hierarchical test generation and diagnostics of differential cascode voltage switch circuits

D.M. Wu R.M. Swanson Jack Davis

Hierarchical methodologies for design-for-testability, test generation, and fault modeling of digital (DCVS) circuits are described. In addition to the 2* density and speed advantages over the conventional CMOS circuits, DCVS technology also has the following improved features: (1) DCVS can handle the test generation for an unlimited size chip. The testing problem is reduced to that of a logic group, and CPU time increases linearly as the number of logic groups increases. Fewer test patterns are required than for a CMOS chip of the same function. (2) Using different levels of diagnostics, DCVS can perform an exact diagnostic to a logic group, a logic tree, or a logic gate level. (3) A self-testable logic design can be easily implemented in DCVS by connecting outputs of each logic group with an XOR tree.< >

Sequential logic

Logic level

Logic simulation

Design for testing

Combinational logic

Cascode

10.1109/iscas.1992.229929

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Ion-implanted complementary MOS transistors in low-voltage circuits

R.M. Swanson J.D. Meindl

Ion-implanted complementary MOS integrated circuits which can operate at supply voltages less than 0.4 V have been fabricated. Their behavior will be described by a new theory of MOST characteristics which is valid near threshold.

10.1109/isscc.1972.1155118

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Multiple redundancy removal during test generation and synthesis

D.M. Wu R.M. Swanson

Techniques of multiple redundancy removal (MRFE) during test generation are described in this paper. A redundant fault, once identified, is propagated forward and backward through the sensitized paths to identify other redundant faults in the circuit under test. The technique is also applied to the class of 'dropped faults' and 'untested faults'. This technique can also be applied to logic minimization during synthesis.< >

Minification

10.1109/vtest.1992.232765

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Developments in Silicon Solar Cells

R.M. Swanson

Silicon solar cells are undergoing rapid development resulting in increasing performance and reduced cost. This paper discusses the major and efficiency limitations and cost elements of silicon solar cells, and shows how these are being improved. A roadmap to achieving grid electricity cost parity by 2012 through halving the installed cost of photovoltaic systems will be outlined.

Grid parity

Silicon solar cell

10.1109/iedm.2007.4418946

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Citations (20)

(Invited) Auger Recombination Study in Silicon Using a Tunneling Technique

Japanese Journal of Applied Physics (1983)

R.M. Swanson

Auger recombination is often thought to be the dominant recombination mechanism in highly doped silicon. Auger coefficients in the neighborhood of 3×10 -31 cm 6 /sec for n-type silicon are required to explain experimental lifetime data. A new method of studying Auger recombination through the hot electrons generated is presented and discussed. This technique uses the large difference in tunneling probability through a thin SiO 2 layer between thermal and hot electrons to actually detect the hot Auger electrons. These measurements establish an upper limit on the band-to-band Auger coefficient of 5×10 -32 cm -6 /sec. This result will be shown to be consistant with lifetime studies in laser generated electron-hole plasmas. The implication of this work is that recombination in highly doped silicon is usually dominated by trap assisted, and hence technologically variable, processes. Several possible candidates for this additional recombination are presented and briefly discussed.

Auger effect

Auger electron spectroscopy

10.7567/jjaps.22s1.547

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Citations (1)

Point Contact Silicon Solar Cells

Springer eBooks (1987)

R.M. Swanson Ronald A. Sinton

Suns in alchemy

Concentrator

Silicon solar cell

10.1007/978-94-009-3817-5_132

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Citations (6)

High Efficiency Silicon Solar Cells

R.M. Swanson

Conversion efficiency has emerged as an important contributor to further reducing photovoltaic system cost. This presentation will discuss the various improvements that have increased the efficiency of commercial products by over 50% in the last 5 years, as well as the impact of these developments on system cost. Article not available.

Presentation (obstetrics)

10.1364/fio.2007.sthf4

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VIB-6 measurement of minority-carrier transport parameters in heavily doped n-type silicon

IEEE Transactions on Electron Devices (1985)

Jesús A. del Alamo R.M. Swanson

10.1109/t-ed.1985.22380

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VIA-10 technology and performance of SIPOS heterojunction emitters

IEEE Transactions on Electron Devices (1982)

Young Kwark R.M. Swanson

10.1109/t-ed.1982.21003

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Citations (1)