This work designed a nanostructured hybrid catalytic layer on commercial Si absorber to empower the artificial leaf for solar-driven ammonia and value-added chemicals production.
Objective: To investigate the clinical characteristics of diabetic patients combined with acute myocardial infarction (AMI) and to compare the prognosis between diabetic and non- diabetic patients in 4-5 years after the onset of AMI. Methods: Followed the certain inclusive and exclusive criteria, a total of 420 patients with acute myocardial infarction were included and divided into diabetes group (group D) and non-diabetes group (group N) with numbers as 161 people and 259 respectively. Baseline data, clinical information, short-term outcome and long-term prognosis of the two groups were compared and analyzed. Results: Among the patients with diabetes, the average age was older (65.65±11.33 vs. 63.30±15.34), with fewer males (64.59% vs. 79.92%); and more likely to have other complications as hypertension (64.60% vs. 53.28%) or hyperlipidemia (42.24% vs. 26.25%). 59.29% of the patients in group D showed pathological changes in 3 major coronary arteries, which were significantly more than its counterpart (40.83%). The proportion of patients that had undergone the coronary artery bypass, grafting (11.11% vs. 5.31%) appeared also higher. There was no significant difference seen in the short-term outcomes between the two groups, but results from the long-term follow-up program showed that both the incidence of Major Adverse Cardiovascular Events (MACE) (50.67% vs. 27.72%) and the all-cause mortality (20.00% vs. 9.90%) in group D were higher than those appeared in group N (27.72%). Conclusions: Patients suffered from the combination of both diabetes and acute myocardial infarction appeared older in age, more in females, with more complications and the coronary artery lesions were more severe and wider. During hospitalization, no significant difference was seen regarding the short-term outcomes between the two groups but the results from long-term follow-up process showing that the risk of MACE events was significantly higher in patients with type2 diabetes.目的： 研究糖尿病急性心肌梗死患者的临床特点，比较糖尿病和非糖尿病患者急性心肌梗死后4~5年预后情况。 方法： 经过一定纳排标准收入420例急性心肌梗死患者，分为糖尿病组161人，非糖尿病组259人，对两组患者的基线资料、病情资料、短期转归及长期预后情况进行对比分析。 结果： 与非糖尿病组相比，糖尿病组患者年龄偏大（65.65±11.33 vs. 63.30±15.34）、男性比例偏低（64.59% vs. 79.92%）、合并高血压病比例（64.60% vs. 53.28%）和高脂血症比例（42.24% vs. 26.25%）等偏高；三支病变比例（59.29% vs. 40.83%）和建议冠脉旁路移植术者（11.11% vs. 5.31%）比例偏高；短期转归方面两组患者没有明显差异，但长期随访结果显示糖尿病组患者不良心血管事件发生概率（50.67% vs. 27.72%）和全因死亡率（20.00% vs. 9.90%）均高于非糖尿病组。 结论： 糖尿病对急性心肌梗死患者的病情及预后有显著的负面影响，主要表现为病变范围和程度的严重性以及长期预后中主要不良心血管事件的风险增加。.
Thin-film solar cells are expected to play a significant role in the space industry, building integrated photovoltaic (BIPV), indoor applications, and tandem solar cells, where bifaciality and semitransparency are highly desired. Sb2 (S,Se)3 has emerged as a promising new photovoltaic (PV) material for its high absorption coefficient, tunable bandgap, and nontoxic and earth-abundant constituents. However, high-efficiency Sb2 (S,Se)3 solar cells exclusively employ monofacial architectures, leaving a considerable gap toward large-scale application in aforementioned fields. Here, a bifacial and semitransparent Sb2 (S,Se)3 solar cell and its extended application in tandem solar cells are reported. The transparent conductive oxides (TCOs) and the ultrathin inner n-i-p structure provide high long-wavelength transmittance. Despite the MnS/ITO Schottky junction, power conversion efficiencies (PCEs) of 7.41% and 6.36% are achieved with front and rear illumination, respectively, contributing to a great bifaciality of 0.86. Consequently, the reported device gains great enhancement in PV performance by exploiting albedo of surroundings and shows exceptional capability in absorbing tilt incident light. Moreover, an Sb2 (S,Se)3 /Si tandem solar cell with a PCE of 11.66% is achieved in preliminary trials. These exciting findings imply that bifacial and semitransparent Sb2 (S,Se)3 solar cells possess tremendous potential in practical applications based on their unique characteristics.
Abstract The performance of kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cell is known to be severely limited by the nonradiative recombination near the heterojunction interface and within the bulk of the CZTSSe absorber resulting from abundant recombination centers and limited carrier collection efficiency. Herein, nonradiative recombination is simultaneously reduced by incorporating small amounts of Ge and Cd into the CZTSSe absorber. Incorporation of Ge effectively increases the p‐type doping, thus successfully improving the bulk conductance and reducing the recombination in the CZTSSe bulk via enhanced quasi‐Fermi level splitting, while the incorporation of Cd greatly reduces defects near the junction region, enabling larger depletion region width and better carrier collection efficiency. The combined effects of Cd and Ge incorporation give rise to systematic improvement in open‐circuit voltage ( V OC ), short‐circuit current density ( J SC ), and fill factor (FF), enabling a high conversion efficiency of 11.6%. This study highlights the multiple cation incorporation strategy for systematically manipulating the opto‐electronic properties of kesterite materials, which may also be applicable to other semiconductors.
The persistent double layer structure whereby two layers with different properties form at the front and rear of absorbers is a critical challenge in the field of kesterite thin-film solar cells, which imposes additional nonradiative recombination in the quasi-neutral region and potential limitation to the transport of hole carriers. Herein, an effective model for growing monolayer CZTSe thin-films based on metal precursors with large grains spanning the whole film is developed. Voids and fine grain layer are avoided successfully by suppressing the formation of a Sn-rich liquid metal phase near Mo back contact during alloying, while grain coarsening is greatly promoted by enhancing mass transfer during grain growth. The desired morphology exhibits several encouraging features, including significantly reduced recombination in the quasi-neutral region that contributes to the large increase of short-circuit current, and a quasi-Ohmic back contact which is a prerequisite for high fill factor. Though this growth mode may introduce more interfacial defects which require further modification, the strategies demonstrated remove a primary obstacle toward higher efficiency kesterite solar cells, and can be applicable to morphology control with other emerging chalcogenide thin films.
Abstract Sulfide kesterite Cu 2 ZnSnS 4 (CZTS) solar cells, containing earth‐abundant and environmentally benign constituents, are regarded as promising candidates for thin‐film photovoltaic technologies. CZTS device performance, however, is currently limited by severe nonradiative recombination caused by abundant deep‐level defects. Herein, an effective defect engineering approach for high bandgap CZTS solar cells using a newly introduced moisture‐assisted post‐deposition annealing treatment is reported. This treatment modifies the local chemical composition within the heterojunction and CZTS grain boundaries and enhances the incorporation of Cd within the CZTS layer during CdS deposition. Cd not only accumulates at the grain boundaries, but it also presents in grain interiors where it occupies Cu lattice sites. The overall modification of the local chemical environment suppresses deep level defects and activates relatively shallow acceptor Cu Zn antisites and Cu vacancies, giving rise to remarkably improved device performance. This work opens a new direction for defect engineering of kesterite materials, which may also be applicable to other thin film semiconductors.
Abstract Understanding carrier loss mechanisms at microscopic regions is imperative for the development of high-performance polycrystalline inorganic thin-film solar cells. Despite the progress achieved for kesterite, a promising environmentally benign and earth-abundant thin-film photovoltaic material, the microscopic carrier loss mechanisms and their impact on device performance remain largely unknown. Herein, we unveil these mechanisms in state-of-the-art Cu 2 ZnSnSe 4 (CZTSe) solar cells using a framework that integrates multiple microscopic and macroscopic characterizations with three-dimensional device simulations. The results indicate the CZTSe films have a relatively long intragrain electron lifetime of 10–30 ns and small recombination losses through bandgap and/or electrostatic potential fluctuations. We identify that the effective minority carrier lifetime of CZTSe is dominated by a large grain boundary recombination velocity (~10 4 cm s −1 ), which is the major limiting factor of present device performance. These findings and the framework can greatly advance the research of kesterite and other emerging photovoltaic materials.
Abstract Kesterite is an earth‐abundant energy material with high predicted power conversion efficiency, making it a sustainable and promising option for photovoltaics. However, a large open circuit voltage V oc deficit due to non‐radiative recombination at intrinsic defects remains a major hurdle, limiting device performance. Incorporating Ge into the kesterite structure emerges as an effective approach for enhancing performance by manipulating defects and morphology. Herein, how different amounts of Ge affect the kesterite growth pathways through the combination of advanced microscopy characterization techniques are systematically investigated. The results demonstrate the significance of incorporating Ge during the selenization process of the CZTSSe thin film. At high temperature, the Ge incorporation effectively delays the selenization process due to the formation of a ZnSe layer on top of the metal alloys through decomposition of the Cu‐Zn alloy and formation of Cu‐Sn alloy, subsequently forming of Cu‐Sn‐Se phase. Such an effect is compounded by more Ge incorporation that further postpones kesterite formation. Furthermore, introducing Ge mitigates detrimental “horizontal” grain boundaries by increasing the grain size on upper layer. The Ge incorporation strategy discussed in this study holds great promise for improving device performance and grain quality in CZTSSe and other polycrystalline chalcogenide solar cells.
Abstract Carrier loss mechanisms at microscopic regions is imperative for high-performance polycrystalline inorganic thin-film solar cells. Despite the progress on Kesterite, a promising environmental-benign and earth-abundant thin-film photovoltaic material, the microscopic carrier loss mechanisms and their impact on device performance remain unknown. Herein, we unveil these mechanisms in state-of-the-art Cu 2 ZnSnSe 4 (CZTSe) solar cells using a framework that links microscopic-structural and optoelectronic characterizations with three-dimensional device simulations. The results indicate the CZTSe films have an encouraging intragrain minority carrier lifetime of >10 ns, a marginal radiative recombination loss through sub-band recombination and electrostatic potential fluctuation, whilst a large effective grain boundary recombination velocity of around 10 4 cm s -1 and a low net carrier density of ~1×10 15 cm -3 . We identify that severe grain boundary recombination and low net carrier density are the current limiting factors of device performance. The established framework can greatly advance the research of kesterite and other emerging photovoltaic materials.
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