Ratnamala Chatterjee

Indian Institute of Technology Delhi

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Vladimir Khovaylo

National University of Science and Technology

Shankar Dutta

Solid State Physics Laboratory

Manoj Kumar Sharma

Jiwaji University

Anupam Bhattacharya

University of Manchester

V. K. Srivastava

University of Szeged

Vittal K. Yachandra

Lawrence Berkeley National Laboratory

T. C. Goel

Motilal Nehru Medical College

L.K. Varga

Institute for Solid State Physics and Optics

Uwe Bergmann

University of Wisconsin–Madison

Junko Yano

Lawrence Berkeley National Laboratory

Cooperative Institutions

Indian Institute of Technology Delhi

Indian Institute of Science Bangalore

Lawrence Berkeley National Laboratory

Solid State Physics Laboratory

Centre National de la Recherche Scientifique

SLAC National Accelerator Laboratory

University of Delhi

Banaras Hindu University

Indian Institute of Technology Kanpur

Indian Institute of Technology Indore

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Dielectric, ferroelectric and pyroelectric properties of PMNT ceramics

Physica B Condensed Matter (2005)

Pawan Kumar Chandra Prakash O. P. Thakur Ratnamala Chatterjee T. C. Goel

Columbite

Poling

Hysteresis

Atmospheric temperature range

10.1016/j.physb.2005.10.107

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Citations (26)

Electrical and Magnetic Properties of Multiferroic $(1\hbox{-}{\rm x})\ {\hbox{BiFeO}}_{3}\hbox{-}{\rm x}\ {\hbox{CoFe}}_{2}{\hbox{O}}_{4}$ Nanocomposite Thin Films Derived by Sol-gel Process

IEEE Transactions on Magnetics (2014)

Mintu Tyagi Mukesh Kumari Ratnamala Chatterjee An‐Cheng Sun Puneet Sharma

In the present work, multiferroic (1-x) BiFeO ₃ -x (CoFe ₂ O ₄ ) ( x=0, 0.3, 0.5) nanocomposite thin films were prepared by sol-gel spin coating process. Structural, electrical and magnetic properties of nanocomposite thin films have been studied. X-ray diffraction study confirmed the co-existence of both perovskite BiFeO ₃ (BFO) and spinel CoFe ₂ O ₄ (CFO) phases. Atomic force microscopy shows CFO particles distributed in BFO matrix. These nanocomposite thin films exhibit both ferroelectric and ferromagnetic switching at room temperature. The magnetic and dielectric properties are improved by incorporation of CFO grains in matrix of BFO. The saturation magnetization (M _s ) increases as x varies from 0 to 0.5. For x=0.5, M _s is found as high as ~ 196 emu/cm ³ . Coercivity is increased with CFO concentration and found maximum ( H _c ~ 1.20 kOe) for x=0.50. This large increase in coercivity indicates strong magnetoelastic coupling. The dielectric constant of the films is increased from 240 (for x=0) to 370 (for x=0.5). All composite films show ferroelectric behavior, however the ferroelectric properties are found to decrease with incorporation of magnetic phase.

10.1109/tmag.2013.2278714

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Citations (11)

Electrical switching and short-range order in As-Te glasses

Physical review. B, Condensed matter (1993)

S. S. K. Titus Ratnamala Chatterjee S. Asokan Ashavani Kumar

The local structural order in chalcogenide network glasses is known to change markedly at two critical compositions, namely, the percolation and chemical thresholds. In the ${\mathrm{As}}_{\mathit{x}}$${\mathrm{Te}}_{100\mathrm{\ensuremath{-}}\mathit{x}}$ glassy system, both the thresholds coincide at the composition x=40 (40 at. % of arsenic). It is demonstrated that the electrical switching fields of As-Te glasses exhibit a distinct change at this composition.

Percolation (cognitive psychology)

Short range order

Chalcogenide glass

10.1103/physrevb.48.14650

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Citations (49)

First-principles theoretical analysis of magnetically tunable topological semimetallic states in antiferromagnetic DyPdBi

Physical review. B./Physical review. B (2023)

Anupam Bhattacharya Vishal Bhardwaj Meha Bhogra B. K. Mani Umesh V. Waghmare

A number of compounds in the family of rare-earth half-Heusler alloys have been predicted to be topologically nontrivial semimetals, classified as Weyl, triple-point, and Dirac semimetals based on the multiplicity of degeneracy of the nodal points or crossing of linearly dispersed electronic bands. Here, we present a first-principles theoretical characterization of the electronic topology of the antiferromagnetic half-Heusler alloy DyPdBi. In the antiferromagnetic state preserving ${C}_{3v}$ symmetry of the crystal, DyPdBi is a triple-point semimetal hosting four triply degenerate nodes along the threefold symmetry axis of the Brillouin zone. In contrast, the antiferromagnetic state of DyPdBi with local magnetic moments on Dy rotated to a direction perpendicular to the ${C}_{3}$ axis breaks the threefold rotational symmetry, and hosts four Weyl nodes in its Brillouin zone. Our calculations of the Berry curvature of their electronic states clearly show that the triple-point fermions of DyPdBi exhibit a signature peak in the anomalous Hall conductivity, while the Weyl fermions do not contribute to anomalous Hall conductivity. As these two topologically distinct magnetic states are separated by a small energy difference of $\ensuremath{\approx}$15 meV, we expect them to be switchable with a magnetic field or spin torque and distinguishable experimentally from anomalous Hall conductance.

Brillouin zone

Weyl semimetal

10.1103/physrevb.107.075144

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Citations (4)

Multiferroic properties in BiFe1−xZnxO3 (x=0.1–0.2) ceramics by solution combustion method (SCM)

Journal of Alloys and Compounds (2011)

Yogesh A. Chaudhari Amarendra K. Singh E.M. Abuassaj Ratnamala Chatterjee S. T. Bendre

Magnetism

Superparamagnetism

10.1016/j.jallcom.2011.12.122

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Citations (22)

Complex permittivity and microwave absorption properties of BaTiO3–polyaniline composite

Materials Science and Engineering B (2005)

S. M. Abbas A. K. Dixit Ratnamala Chatterjee T. C. Goel

Reflection loss

10.1016/j.mseb.2005.07.018

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Citations (161)

Functional Ceramic Ferroelectromagnetic Materials in Single Phase Solid-Solutions

Ratnamala Chatterjee

Abstract : 1. Perform a detailed study on magneto-dielectric effect in the ferroelectric ferromagnet (FEM) ternary oxide solid solutions like Bi(TM)O3-(La1-xREx)0.67(Ba/Ca)0.33MnO3-BTiO3,where TM=transition metal, initially Fe, RE=Rare Earth and B= Ba, Pb. 2. To find suitable composition such that the ferroelectric and ferromagnetic properties are observable at or near room temperature. 3. To decrease the difference between the ferroelectric (Tfe) and ferromagnetic (TN or Tc) transition temperatures by modifying BiFeO3, and 4. To enhance ferroelectromagnetic behavior in the modified BiFeO3. The details of the results and discussion are presented in the final report.

Ferroelectric ceramics

Source

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Effect of growth and electrical properties of TiOx films on microbolometer design

Journal of Materials Science Materials in Electronics (2020)

Isha Yadav Surbhi Jain S. Lamba Monika Tomar Sudha Gupta

Microbolometer

Temperature coefficient

Figure of Merit

Resistive touchscreen

10.1007/s10854-020-03223-y

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Citations (11)

Incoherent effect of Fe and Ni substitutions in the ferromagnetic-insulator La0.6Bi0.4MnO3+δ

Journal of Applied Physics (2011)

Asish K. Kundu Md. Motin Seikh Akhilesh K. Srivastava Shivam Mahajan Ratnamala Chatterjee

A comparative study of the effect of Fe and Ni doping on the bismuth based perovskite La0.6Bi0.4MnO3.1, a projected spintronics magnetic semiconductor has been carried out. The doped systems show an expressive change in magnetic ordering temperature. However, the shifts in ferromagnetic transition (TC) of these doped phases are in opposite direction with respect to the parent phase TC of 115 K. The Ni-doped phase shows an increase in TC ∼200 K, whereas the Fe-doped phase exhibits a downward shift to TC∼95 K. Moreover, the Fe-doped is hard-type whereas the Ni-doped compound is soft-type ferromagnet. It is observed that the materials are semiconducting in the ferromagnetic phase with activation energies of 77 & 82 meV for Fe & Ni-doped phases, respectively. In the presence of external magnetic field of 7 T, they exhibit minor changes in the resistivity behaviors and the maximum isothermal magnetoresistance is around −20% at 125 K for the Ni-phase. The results are explained on the basis of electronic phase separation and competing ferromagnetic and antiferromagnetic interactions between the various mixed valence cations.

Magnetic semiconductor

Metal–insulator transition

10.1063/1.3646458

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Citations (8)

Bismuth as antiferroelectric phase-stabilizer in Pb(ZrSn)TiO3: Designing of a material with large strain and shape memory effect

Applied Physics Letters (2023)

Hitesh Kumar Divya Prakash Dubey Ratnamala Chatterjee

This work highlights antiferroelectric (AFE) phase stabilizing effect of Bi substitution at the A-site in Pb[(Zr0.7Sn0.3)0.938Ti0.062]O3. The composition Pb0.985Bi0.01(Zr0.7Sn0.3)0.938Ti0.062O3 with 1% Bi substitution lies just outside the morphotropic phase boundary (MPB) toward the AFE side and allows an electric field driven atomic rearrangement for a disordered state. The disorder and randomness introduced through this substitution is seen to impact the electromechanical property like strain, quite drastically (Smax ∼ 0.3%). Keeping the optimal Bi inclusion and Zr: Sn as 70:30, the B-site of Pb0.985Bi0.01[(Zr0.7Sn0.3)xTi1-x]O3, is varied. The system is brought back to MPB for x = 0.933, and strain values of Smax ∼ 0.44% and a remnant strain Srem ∼ 0.27% are obtained for the optimized MPB composition Pb0.985Bi0.01[(Zr0.7Sn0.3)0.933Ti0.067]O3.

Bismuth

Antiferroelectricity

Phase boundary

Substitution (logic)

10.1063/5.0131132

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