G. Simin

University of South Carolina

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Co-Authors

M. S. Shur

Rensselaer Polytechnic Institute

169

R. Gaška

Sensor Electronic Technology (United States)

152

M. Asif Khan

Northumbria University

Jinwei Yang

Anhui Medical University

X. Hu

Guangxi University

V. Adivarahan

Nitek (United States)

A. Koudymov

Rensselaer Polytechnic Institute

Jianping Zhang

Chinese Academy of Sciences

Mikhail Gaevski

University of South Carolina

Asif Khan

University of South Carolina

Cooperative Institutions

University of South Carolina

127

Rensselaer Polytechnic Institute

Sensor Electronic Technology (United States)

Institute of High Pressure Physics

Polish Academy of Sciences

Centre National de la Recherche Scientifique

Physico-Technical Institute

Russian Academy of Sciences

Georgia Institute of Technology

Ioffe Institute

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Non‐catalyst growth and characterization of a ‐plane AlGaN nanorods

physica status solidi (a) (2006)

Mikhail Gaevski Wenhong Sun Jinwei Yang V. Adivarahan A. Sattu

Abstract We report on growth of Al 0.22 Ga 0.78 N/Al 0.06 Ga 0.94 N nanorods over a ‐plane GaN template using low pressure metal‐organic chemical vapor deposition. Nanorods with average diameter of 100 nm were up to 30 µm long. They grew preferentially along the 〈11 $ \bar 2 $ 0〉 crystal direction and possessed excellent optical and mechanical properties. It was shown using monochromatic cathodoluminescence that nanorods emit light both at 320 nm and 350 nm over entire length proving uniform coating of the Al 0.06 Ga 0.94 N rod core by an Al 0.22 Ga 0.78 N shield. The elastic modulus of nanorod material was found to be 185 GPa. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Nanorod

Cathodoluminescence

Characterization

10.1002/pssa.200565421

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Citations (6)

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

Applied Physics Letters (2000)

M. Asif Khan X. Hu Ahmad Tarakji G. Simin J. Yang

We report on AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaN heterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °C with excellent pinch-off characteristics. These results clearly establish the potential of using AlGaN/GaN MOS-HFET approach for high power microwave and switching devices.

Wide-bandgap semiconductor

10.1063/1.1290269

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Citations (348)

Small- and Large-Signal Performance of III-Nitride RF Switches With Hybrid Fast/Slow Gate Design

IEEE Microwave and Wireless Components Letters (2011)

A. Sattu Jinwei Yang R. Gaška Md. Bilal Khan M. S. Shur

We report on the small-signal and power performance of AlGaN/GaN RF switches with novel gate design incorporating regular metal gate deposited over a “slow” gate electrode formed by a low-conducting InGaN film. SPDT RF switch MMICs using hybrid “fast/slow” gate AlGaN/GaN MOSHFETs show superior transmission characteristics while maintaining the same high-power and high-linearity performance as the switches based on conventional MOSHFETs.

Linearity

RF switch

SIGNAL (programming language)

Transmission gate

10.1109/lmwc.2011.2138686

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Citations (6)

5-TERMINAL THz GaN BASED TRANSISTOR WITH FIELD- AND SPACE-CHARGE CONTROL ELECTRODES

Selected topics in electornics and systems (2009)

G. Simin M. S. Shur R. Gaška

Charge control

10.1142/9789814287876_0002

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Citations (0)

Enhanced Power and Breakdown in III-N RF Switches With a Slow Gate

IEEE Electron Device Letters (2011)

A. Sattu J. Deng Daniel Billingsley Jinwei Yang M. S. Shur

We show that III-nitride radio-frequency switches with a composite slow/fast gate have higher maximum switching power and breakdown voltage compared with conventional switches of the same type. The composite gate design includes an additional “slow gate” electrode formed under the metal gate using a low-conducting InGaN layer. The “slow gate” covers the entire source-drain spacing. The addition of the “slow gate” layer not only offers a lower insertion loss and higher isolation but, as shown in this letter, also increases the power handling capability by “delaying” switch self-modulation under high-power stress. We also show that, the “slow gate” design increases breakdown voltage.

Metal gate

Gate driver

Switching time

Modulation (music)

10.1109/led.2011.2126557

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Citations (2)

High performance 0.25 μm gate-length AlGaN∕GaN HEMTs on sapphire with transconductance of over 400 mS∕mm

Electronics Letters (2002)

V. Kumar Wu Lu Farid Khan R. Schwindt A. Kuliev

Metal organic chemical vapour deposition-grown AlGaN/GaN high electron mobility transistors (HEMTs) having record high transconductance of over 400 mS/mm have been fabricated on sapphire substrates. These 0.25 µm gate-length devices exhibited maximum drain current density as high as 1.4 A/mm, unity gain cutoff frequency ( fT) of 85 GHz, and maximum frequency of oscillation ( fmax) of 151 GHz. The fT of 85 GHz and fmax of 151 GHz are the highest ever reported values for 0.25 µm gate-length GaN-based HEMTs.

Transconductance

Cutoff frequency

Oscillation (cell signaling)

10.1049/el:20020178

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Citations (16)

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

MRS Proceedings (2002)

E. Kuoks̃tis C. Q. Chen Mikhail Gaevski Wenhong Sun Jun Yang

Wurtzite crystal structure

Blueshift

Photoluminescence excitation

10.1557/proc-743-l5.3

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GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

Selected topics in electornics and systems (2004)

S. L. Rumyantsev Nezih Pala M. S. Shur M. E. Levinshteǐn R. Gaška

Font

10.1142/9789812562364_0010

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Citations (1)

Low frequency noise in Al/sub 0.4/Ga/sub 0.6/N thin films

Nezih Pala Sergey Rumyantsev R. Gaška M. S. Shur Jae‐Hun Yang

Low-frequency noise in Al/sub 0.4/GaN/sub 0.6/ thin films (50 nm) was measured at room and elevated temperatures as a function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noise were observed. The Hooge parameter, /spl alpha/, was estimated to be about 7. The activation energy for observed g-r noise was found to be E/sub a//spl sim/1.0 eV. This activation energy is consistent, with the activation energy observed for g-r noise in AlGaN/GaN HFETs.

10.1109/lechpd.2002.1146746

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Quantum Channel AlGaN/GaN/AlGaN High Electron Mobility Transistor

arXiv (Cornell University) (2023)

G. Simin M. S. Shur

Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low sheet carrier densities. In contrast to the conventional designs, this Quantum Channel (QC) confinement is controlled by epilayer design and the polarization field and not by the electron sheet density. As a result, the breakdown field at low sheet carrier densities increases by approximately 36% or even more because the quantization leads to an effective increase in the energy gap. In addition, better confinement increases the electron mobility at low sheet carrier densities by approximately 50%. Another advantage is the possibility of increasing the aluminum molar fraction in the barrier layer because a very thin layer prevents material relaxation and the development of dislocation arrays. This makes the QC especially suitable for high-voltage, high-frequency, high-temperature, and radiation-hard applications.

Electron Mobility

10.48550/arxiv.2311.14672

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