Christoph Reuter

Technische Universität Ilmenau

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Ivo W. Rangelow

Technische Universität Ilmenau

Mathias Holz

Technische Universität Ilmenau

Martin Hofmann

Technische Universität Ilmenau

Alexander Reum

University of New Mexico

Tzvetan Ivanov

Technische Universität Ilmenau

Ahmad Ahmad

State University of Malang

Eberhard Manske

Technische Universität Ilmenau

Steffen Strehle

Technische Universität Ilmenau

Jaqueline Stauffenberg

Technische Universität Ilmenau

Ingo Ortlepp

Technische Universität Ilmenau

Cooperative Institutions

Technische Universität Ilmenau

Kirchhoff (Germany)

University of New Mexico

Institut für Mikroelektronik- und Mechatronik-Systeme

Wrocław University of Science and Technology

AGH University of Krakow

Lawrence Berkeley National Laboratory

Agrobioinstitute

Madrid Institute for Advanced Studies

Walter de Gruyter (Germany)

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Exploring the Surface Oxidation and Environmental Instability of 2H‐/1T’‐MoTe₂ Using Field Emission‐Based Scanning Probe Lithography

Advanced Materials (2023)

Christoph Reuter G. Ecke Steffen Strehle

An unconventional approach for the resistless nanopatterning 2H- and 1T'-MoTe

Nanosheet

Auger electron spectroscopy

10.1002/adma.202310887

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Citations (6)

Mask-less nano-structuring of hydrogen terminated diamond using localized field emission scanning probe lithography (FE-SPL)

Applied Physics Letters (2022)

Steve A. Yianni Martin R. Hofmann Alex K. Schenk Christoph Reuter Ivo W. Rangelow

Sensing and manipulating a particle's spin promise the development of more energy efficient and ultra-fast devices. Diamond is a promising candidate for spintronics and quantum systems, where nano-structuring of diamond surfaces on nanometer length scales is required. Here, direct-write modification of a diamond surface at sub-50 nm resolution is demonstrated. This is achieved with an atomic force microscope tip used as a spatially localized field emission source or so-called field-emission scanning probe lithography on a sample in ambient conditions, which are rendered conductive only through the surface conductivity of hydrogen-terminated diamond. Mask-less direct structuring of the diamond surface is observed, creating features of depth in the range of 4–8 nm and linewidths of 70–150 nm, as well as the desorption of hydrogen from the surface achieving minimum linewidths of 40 nm. Both the linewidth and depth of etching appear to depend on the energy of emitted electrons and the resulting electron exposure dose. These findings demonstrate the possibility of controllably nano-structuring diamond surfaces with features over micrometer length scales and with sub-50 nm resolution, while held under ambient conditions.

Micrometer

Nanodiamond

10.1063/5.0081119

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Citations (1)

A versatile scanning photocurrent mapping system to characterize optoelectronic devices based on 2D materials

arXiv (Cornell University) (2017)

Christoph Reuter Riccardo Frisenda Der‐Yuh Lin Tsung‐Shine Ko David Pérez de Lara

The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built scanning photocurrent microscope that we have designed and developed to perform electronic transport and optical measurements of two-dimensional materials based devices. The complete system is rather inexpensive (<10000 EUR) and it can be easily replicated in any laboratory. To illustrate the setup we measure current-voltage characteristics, in dark and under global illumination, of an ultra-thin PN junction formed by the stacking of an n-doped few-layer MoS2 flake onto a p-type MoS2 flake. We then acquire scanning photocurrent maps and by mapping the short circuit current generated in the device under local illumination we find that at zero bias the photocurrent is generated mostly in the region of overlap between the n-type and p-type flakes.

Photocurrent

10.48550/arxiv.1705.01785

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Citations (0)

High throughput AFM inspection system with parallel active cantilevers

Mathias Holz Christoph Reuter Alexander Reum Ahmad Ahmad Martin Hofmann

Atomic Force Microscopes are capable to provide non-destructive high resolution, CD-metrology and precise defect analysis. However, a conventional AFM has not enough throughput for today's large scale semiconductor manufacturing. The primary point remains the increase of the scanning area in case of large wafers, masks, displays or dies. Cantilever array-based AFMs are intended to increase the imaging throughput by parallelizing the work of many AFM probes that may be practiced by parallel AFM systems that are capable to operate autonomously. An active cantilever scheme makes it possible to sense electronically the deflection and individually to control the actuation of every cantilever in the array. Each cantilever in the array represents a self-sustaining AFM-hardware system for metrology and imaging. In that, the multiple parallel probes are forming many AFMs capable to work independently.

10.1117/12.2537009

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Mix-and-match lithography and cryogenic etching for NIL template fabrication

Microelectronic Engineering (2020)

Martin Hofmann Laura Weidenfeller Shraddha Supreeti Stephan Mechold Mathias Holz

Nanoimprint lithography

Image stitching

Template

Next-generation lithography

10.1016/j.mee.2020.111234

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Citations (22)

Atomic force microscope integrated into a scanning electron microscope for fabrication and metrology at the nanometer scale

Mathias Holz Christoph Reuter Alexander Reum Ahmad Ahmad Martin Hofmann

An integration of atomic force microscopy (AFM) and scanning electron microscopy (SEM) within a single system is opening new capabilities for correlative microscopy and tip-induced nanoscale interactions. Here, the performance of an AFM-integration into a high resolution scanning electron microscope and focused ion beam (FIB) system for nanoscale characterization and nanofabrication is presented. Combining the six-axis degree of freedom (DOF) of the AFM system with the DOF of the SEM stage system, the total number of independent degree of freedom of the configuration becomes eleven. The AFM system is using piezoresistive thermomechanically transduced cantilevers (active cantilevers). The AFM integrated into SEM is using active cantilevers that can characterize and generate nanostructures all in situ without the need to break vacuum or contaminate the sample. The developed AFM-integration is described and its performance is demonstrated. The benefit of the active cantilever prevents the use of heavy and complex optical cantilever detection technique and makes the AFM integration into a SEM very simple and convenient. Results from combined examinations applying fast AFM-methods and SEM-image fusion, AFM-SEM combined metrology verification, and tip-based nanofabrication are shown. Simultaneous operation of SEM and AFM provides a fast navigation combined with sub-nm topographic image acquisition. The combination of two or more different types of techniques like SEM, energy dispersive x-ray spectroscopy, and AFM is called correlative microscopy because analytical information from the same place of the sample can be obtained and correlated [1]. We introduced to the SEM/FIB tool correlative nanofabrication methods like field-emission scanning probe lithography, tip-based electron beam induced deposition, and nanomachining/nanoidentation.

Dip-Pen Nanolithography

Scanning Probe Microscopy

10.1117/12.2537018

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Citations (6)

Investigations on Long-Range AFM Scans Using a Nanofabrication Machine (NFM-100)

Jaqueline Stauffenberg Ingo Ortlepp Christoph Reuter Mathias Holz Denis Dontsov

The focus of this work lies on investigations on a new Nano Fabrication Machine (NFM-100) with a mounted atomic force microscope (AFM). This installed tip-based measuring system uses self-sensing and self-actuated microcantilevers, which can be used especially for field-emission scanning probe lithography (FESPL). The NFM-100 has a positioning range of Ø 100 mm, which offers, in combination with the tip-based measuring system, the possibility to analyse structures over long ranges. Using different gratings, the accuracy and the reproducibility of the NFM-100 and the AFM-system will be shown.

10.3390/proceedings2020056034

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Sharp GaN nanowires used as field emitter on active cantilevers for scanning probe lithography

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2018)

Claudia Lenk Martin Hofmann Tzvetan Ivanov Ahmad Ahmad Steve Lenk

Field emission scanning probe lithography (FE-SPL), which offers sub-10 nm resolution under ambient conditions, strongly relies on the quality and shape of the applied scanning probe tip. The technological development of AFM systems is also strongly connected to the performance of the cantilever. Thereby, the probes evolved from a simple passive deflection element to a complex MEMS through integration of functional groups, such as piezoresistive detection sensors and bimaterial based actuators. Here, the authors show actual trends and developments of miniaturization efforts for fabrication of active cantilevers with mounted sharp GaN and diamond nanowires. Both materials exhibit a higher mechanical stability than the typically applied silicon, which is supposed to increase tip lifetime and reproducibility of the lithography process. Furthermore, diamond offers a high chemical stability, whereas electrical and optical properties of GaN are tunable. They present preliminary results on the applicability of GaN nanowires and diamond tips, mounted on active scanning probes, as field emitter for FE-SPL. Therefore, field emission measurements, stability of field emission current, and exemplary high resolution features generated with the tested tips are shown.

Piezoresistive effect

Scanning Probe Microscopy

10.1116/1.5048190

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Citations (6)

Parallel active cantilever AFM tool for high-throughput inspection and metrology

Mathias Holz Christoph Reuter Ahmad Ahmad Alexander Reum Tzvetan Ivanov

Atomic Force Microscopy (AFM) is a capable to provide high resolution CD-metrology and precise defects analysis on large wafers, masks or displays. However, AFM is not enough productive for high-throughput industrial uses. Standard single probe AFMs are showing low throughput as a serial imaging tools. The use of an array of four cantilevers as a Quattro-Array results in effective speed of 6 to 10 mm/s. An image size of 0.5mm x 0.2mm is achieved employing a piezoelectric positioner with a scan range of 200μm x 200μm and a resolution of 0.25nm (x,y) and 0.2nm (z), respectively. These capabilities are qualifying the Quattro-cantilever array system as fastest tool for. In this paper we present new results obtained with our Quattro-AFM high-throughput parallel SPM system that exhibits two key advances that are required for a successful deployment of SPM in time-efficient metrology, defect analysis and mask inspection.

10.1117/12.2515091

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Citations (4)

A Versatile Scanning Photocurrent Mapping System to Characterize Optoelectronic Devices based on 2D Materials

Small Methods (2017)

Christoph Reuter Riccardo Frisenda Der‐Yuh Lin Tsung‐Shine Ko David Pérez de Lara

The investigation of optoelectronic devices based on 2D materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. Here, a description of a home‐built scanning photocurrent microscope is presented, which is designed and developed to perform electronic transport and optical measurements of 2D‐materials‐based devices. The complete system is rather inexpensive (<10 000 €) and it can be easily replicated in any laboratory. To illustrate the setup, current–voltage characteristics are measured, in the dark and under global illumination, of an ultrathin p–n junction formed by the stacking of an n‐doped few‐layer MoS 2 flake onto a p‐type MoS 2 flake. Scanning photocurrent maps are then acquired, and by mapping the short‐circuit current generated in the device under local illumination, it is found that at zero bias, the photocurrent is generated mostly in the region of overlap between the n‐type and p‐type flakes.

Photocurrent

Photoconductivity

Biasing

10.1002/smtd.201700119

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Citations (26)