O.R. Monteiro

Baker Hughes (United States)

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I.G. Brown

University of Queensland

I.G. Brown

Lawrence Berkeley National Laboratory

Marie‐Paule Delplancke‐Ogletree

Université Libre de Bruxelles

André Anders

Leipzig University

M. C. Salvadori

Universidade de São Paulo

Joel W. Ager

University of California, Berkeley

K. M. Yu

Lawrence Berkeley National Laboratory

Victor P. Mammana

Centro de Tecnologia da Informação Renato Archer

Marie‐Paule Delplancke

Université Libre de Bruxelles

R.A. MacGill

Lawrence Berkeley National Laboratory

Cooperative Institutions

University of California, Berkeley

Lawrence Berkeley National Laboratory

City University of Hong Kong

Oak Ridge National Laboratory

University of Illinois Urbana-Champaign

Sandia National Laboratories

Los Alamos National Laboratory

Sandia National Laboratories California

Berkeley College

Universidade de São Paulo

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Surface engineering of glazing materials and structures using plasma processes

Lawrence Berkeley National Laboratory (2003)

André Anders O.R. Monteiro

A variety of coatings is commercially produced on a very large scale, including transparent conducting oxides and multi-layer silver-based low-emissivity and solar control coatings. A very brief review of materials and manufacturing process is presented and illustrated by ultrathin silver films and chevron copper films. Understanding the close relation between manufacturing processes and bulk and surface properties of materials is crucial for film growth and self-assembly processes.

Glazing

Source

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Some consequences to ion source behavior of high plasma drift velocity

Review of Scientific Instruments (2000)

I.G. Brown O.R. Monteiro M.M.M. Bilek Michael Keidar Е. М. Oks

We consider the case of energetic ion beam formation when the ion streaming velocity within the source plasma is substantial, i.e., when the ions have a drift speed (in the positive downstream direction) that is on the order of or greater than the ion acoustic speed in the plasma. Some interesting consequences can follow, including the capability of a negatively biased substrate located in the plasma stream to maintain high bias voltage, and of an ion source with no extractor or “conventionally poor” extractor providing a kind of plasma immersion ion implantation mode of operation. Here we summarize the kind of plasma geometry in which this situation can occur, and describe some experimental observations we’ve made of these effects, with reference to a simple theoretical basis for the mechanism.

Plasma-immersion ion implantation

Extractor

Ion gun

Biasing

10.1063/1.1150392

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Citations (4)

Surface transformation of graphite or diamond following Highly Charged Ion irradiation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2008)

J. P. Briand André Anders O.R. Monteiro R. A. Phaneuf Z. Q. Xie

Highly charged ion

10.1016/j.nimb.2008.11.051

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Citations (2)

Plasma and Ion Beam Tools for Enhanced Battery Electrode Performance

MRS Proceedings (1996)

André Anders Fen‐Ying Kong Yulin Chen O.R. Monteiro Frank McLarnon

Plasma-immersion ion implantation

Separator (oil production)

10.1557/proc-438-543

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Synthesis of sub-surface oxide layers by hybrid metal–gas co-implantation into metals

Surface and Coatings Technology (1998)

I.G. Brown F Liu O.R. Monteiro K. M. Yu Peter J. Evans

Ion beam mixing

Surface Modification

Surface layer

Elastic recoil detection

10.1016/s0257-8972(98)00426-5

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Citations (10)

Vacuum-arc-generated macroparticles in the nanometer range

IEEE Transactions on Plasma Science (1999)

O.R. Monteiro André Anders

Micron and submicron "macroparticles" are produced along with the plasma at vacuum arc cathode spots. Published data refer to the size range 0.2-100 /spl mu/m. The lower limit is determined by the resolution of the equipment used (usually scanning electron microscopes). In the present study we focus on the detection and characterization of nanosize macroparticles ("nanoparticles") using atomic force microscopy and fieid-emission scanning electron microscopy. New information is gathered on material-dependent size distribution functions as well as on the effectiveness of magnetic filtering for nanoparticles.

Nanometre

Vacuum arc

Characterization

Electric arc

10.1109/27.782276

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Citations (22)

Evaluating Mechanical Properties of Thin Layers using Nanoindentation and Finite-Element Modeling: Implanted Metals and Deposited Layers

MRS Proceedings (1996)

J. A. Knapp D. M. Follstaedt J. C. Barbour S. M. Myers Joel W. Ager

10.1557/proc-438-617

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Citations (19)

Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

Physica B Condensed Matter (2003)

Michael A. Scarpulla U. Daud K. M. Yu O.R. Monteiro Z. Liliental‐Weber

Magnetic semiconductor

10.1016/j.physb.2003.09.113

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Citations (27)

Magnetic field effect on the sheath in plasma immersion ion implantation

Michael Keidar O.R. Monteiro André Anders Iain D. Boyd

Summary form only given. Plasma immersion ion implantation (PIII) is a relatively new technology that is used to modify material surface properties. In a PIII process, a negatively biased target is placed in the plasma. The resulting electric field is concentrated in the target vicinity, in a sheath, a region where quasi-neutrality breaks down. This electric field accelerates ions to the high energy towards the target. High energy ions are implanted into the surface and modify the surface properties for a wide range of materials. Since the main ion acceleration is concentrated in the sheath, the sheath behavior is extremely important in PIII. It is clear that keeping the sheath thickness in the optimal range is an important problem. One of the ways to control the sheath thickness may be the use of a magnetic field. We present some preliminary results of experimental measurements of the sheath size using a filtered vacuum arc plasma source. The sheath thickness was measured using a positively biased movable cylindrical probe. When the probe was immersed in the plasma, it collected the electron saturation current and when the probe was immersed in the sheath, its current is practically zero because the sheath is depleted of electrons. By moving the probe from the target, it was possible to determine the sheath edge distance from the target when observing a sharp change in electron current collected by the probe.

Plasma-immersion ion implantation

Debye sheath

Ion current

Saturation current

Langmuir Probe

10.1109/plasma.2002.1030536

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Investigation of the electron emission from pores in a diamond porous membrane

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (2000)

Victor P. Mammana S. Anders O.R. Monteiro M. C. Salvadori

It was previously proposed that porous diamond membranes can be used as field emission arrays. As main features of such a device, we identified a field enhancement factor equivalent or superior to that of a metal edge emitter, allied to a higher vacuum conductance. Emitting membrane prototypes were built and tested. These showed promising emission performance. In this work we continue the membrane pore characterization from a geometric point of view. We also present photoemission electron microscopy images from the emitting area around a pore. These images show that indeed there is enhanced electron emission occurring in that region. Current versus time and current versus field graphs complete the emission characterization.

Characterization

Field emission microscopy

10.1116/1.1288133

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Citations (5)