Abstract Organic ultralong room temperature phosphorescence (RTP), or organic afterglow, is a unique phenomenon, gaining widespread attention due to its far‐reaching application potential and fundamental interest. Here, two laterally expanded 9,10‐dimesityl‐dihydro‐9,10‐diboraanthracene (DBA) derivatives are demonstrated as excellent afterglow materials for red and blue‐green light emission, which is traced back to persistent thermally activated delayed fluorescence and RTP. The lateral substitution of polycyclic DBA scaffold, together with weak transversal electron‐donating mesityl groups, ensures the optimal molecular properties for (reverse) intersystem crossing and long‐lived triplet states in a rigid poly(methyl methacrylate) matrix. The achieved afterglow emission quantum yields of up to 3 % and 15 %, afterglow lifetimes up to 0.8 s and 3.2 s and afterglow durations up to 5 s and 25 s (for red and blue‐green emitters, respectively) are attributed to the properties of single molecules.
Abstract Hybrid lead halide perovskite solar cells (PSCs) have emerged as potential competitors to silicon‐based solar cells with an unprecedented increase in power conversion efficiency (PCE), nearing the breakthrough point toward commercialization. However, for hole‐transporting materials, it is generally acknowledged that complex structures often create issues such as increased costs and hazardous substances in the synthetic schemes, when translated from the laboratory to manufacture on a large scale. Here, we present cyclobutane‐based hole‐selective materials synthesized using simple and green‐chemistry inspired protocols in order to reduce costs and adverse environmental impact. A series of novel semiconductors with molecularly engineered side arms were successfully applied in perovskite solar cells. V1366 ‐based PSCs feature impressive efficiency of 21 %, along with long‐term operational stability under atmospheric environment. Most importantly, we also fabricated perovskite solar modules exhibiting a record efficiency over 19 % with an active area of 30.24 cm 2 .
Abstract Rapid reverse intersystem crossing (RISC) is one of the prime concerns for blue thermally activated delayed fluorescence (TADF) emitters, as it reduces triplet exciton population, the root cause of detrimental triplet‐mediated annihilation processes that accelerate device efficiency roll‐off and degradation. This work introduces a new concept to tailor the RISC of TADF emitters through their molecular geometry adaptation to crystalline hosts bearing a similar donor‐acceptor structure. A meticulously designed crystalline host comprising isophthalonitrile acceptor (A) and carbazole‐derived donor (D) units, characterized by nearly orthogonal D‐A arrangement, has been demonstrated to alleviate singlet‐triplet energy gap (ΔE ST ) of the TADF dopant by forcing it to adopt a more twisted D‐A configuration, as corroborated by X‐ray diffraction (XRD) measurements. The approach not only significantly reduces the RISC activation energy, resulting in a remarkable tenfold boost of the RISC rate (above 10 7 s −1 ) and fourfold shortening of delayed FL lifetime (down to 1.5 µs), but also offers the additional benefit of suppressing conformational disorder of TADF dopant, producing a narrower emission bandwidth. The presented concept, based on crystalline host‐driven RISC engineering, is anticipated to have a profound impact on the development of high‐performance, stable blue‐emitting TADF organic light‐emitting diodes (OLEDs).
Construction of rigid TADF compounds allows us to minimize the conformational disorder and obtain single-exponential DF in solid hosts with an exceptional RISC rate of nearly 6 × 106 s−1 and high emission yield.
The development of new technology, which would be able to shift photosensitivity of Si devices to the mid-infrared range, preserving the benefits of cheap silicon readout circuits, is of high priority for short-wave infrared photo-detection in defense, medical, night vision, and material production applications. Group IV GeSn-based materials have recently shown promising optoelectronic characteristics, allowing extension of the detection range to the mid-infrared region. However, the electronic properties of the material are not well understood and need further research. In this work, we provide temperature dependent studies of carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer on silicon by applying contactless light induced transient grating technique. The observed temperature dependence of lifetime was explained by the recombination of carriers on vacancy-related defects. The electron and hole capture cross sections were calculated. The temperature dependence of the diffusion coefficient indicated hole mobility limited by phonon and defect scattering. Weakly temperature dependent diffusion length of ∼0.5 μm verified material suitability for efficient submicrometer-thick optoelectronic devices.
A novel pyrimidine-based host material with a triplet energy of 3.07 eV was synthesized. Sky blue and blue OLEDs were fabricated, obtaining high external quantum efficiency and extremely low efficiency roll-off.
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