Both chemodynamic therapy and photodynamic therapy, based on the production of reactive oxygen (ROS), have excellent potential in cancer therapy. However, the abnormal redox homeostasis in tumor cells, especially the overexpressed glutathione (GSH) could scavenge ROS and reduce the anti-tumor efficiency. Therefore, it is essential to develop a simple and effective tumor-specific drug delivery system for modulating the tumor microenvironment (TME) and achieving synergistic therapy at the tumor site. In this study, self-assembled nanoparticles (named CDZP NPs) were developed using copper ion (Cu

10.1039/d3tb02576d

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Citations (2)

Nanoscale electrochemical metallization memories based on amorphous (La, Sr)MnO₃using ultrathin porous alumina masks

Journal of Physics D Applied Physics (2014)

Dongqing Liu Chaoyang Zhang Guang Wang Zhengzheng Shao Xuan Zhu

Nanoscale electrochemical metallization (ECM) memories based on amorphous La1−xSrxMnO3 (a-LSMO) were fabricated using ultrathin porous alumina masks. The ultrathin alumina masks, with thicknesses of about 200 nm and pore diameters of about 80 nm, were fabricated through a typical two-step anodization electrochemical procedure and transferred onto conductive Pt/Ti/SiO2/Si substrates. Resistive switching (RS) properties of the individual Ag/a-LSMO/Pt ECM cell were directly measured using a conductive atomic force microscope. The cells exhibited typical RS characteristics and the OFF/ON resistance ratio is as high as 102. Reproducible RS behaviours on the same ECM cell and the I–V cycles obtained from different ECM cells ensured that the RS properties in nanoscale Ag/a-LSMO/Pt cells are reproducible and reliable. This work provides an effective approach for the preparation of nanostructured large-scale ordered ECM memories or memristors.

Amorphous semiconductors

10.1088/0022-3727/47/8/085108

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Citations (10)

Impact of imprecise programming of memristor on building hardware neural network

International Conference on Electrical and Control Engineering (2011)

Xuan Zhu

The application of memristor in building hardware neural network has accepted widespread interests, and may bring novel opportunities to neural computing. However, due to the limitation of programming precision, the conductance of memristor which represents stored information may deviate from theoretical value, and thus bring error to the neural computing results. In this paper, we analyze the impact of imprecise programming on building hardeware neural network through Monte Carlo simulation on feedback layer model. The results show that the fault-tolerance ability of neural network could well adapt to these errors, which further proves the potential of building neural networks using memristors.

Memristor

Neuromorphic engineering

Physical neural network

10.1109/iceceng.2011.6057542

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Citations (1)

The relationship between the oxidative stress reaction and the microbial community by a combinative method of PA and CCA

The Science of The Total Environment (2020)

Dongxing Zhou Shiben Wang Xiaoyan Liang Jiahao Wang Xuan Zhu

10.1016/j.scitotenv.2020.143042

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Citations (6)

Gender differences in pharmacokinetics of oral warfarin in rats

Biopharmaceutics & Drug Disposition (2005)

Xuan Zhu Wan Gyoon Shin

Gender different pharmacokinetics of warfarin were investigated after oral administration at a dose of 2 mg/kg to male and female rats. The concentrations of warfarin in rat plasma were analysed by the HPLC method. Noncompartmental analysis was used for the calculation of the total area under the plasma concentration–time curve from time zero to time infinity (AUC) and terminal half-life of warfarin. After oral administration of warfarin to female rats, the AUC was significantly greater (345 compared with 180 µg h/ml) than that in male rats. Copyright © 2005 John Wiley & Sons, Ltd.

Oral dose

Half-life

10.1002/bdd.442

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Citations (18)

Self-assembly of multifunctional integrated nanoparticles loaded with a methotrexate–phospholipid complex: combining simplicity and efficacy in both targeting and anticancer effects

RSC Advances (2016)

Yanxiu Li Jinyan Lin Guihua Liu Yang Li Liang Song

Self-assembly of multifunctional integrated nanoparticles loaded with methotrexate-phospholipid complex have both targeting and anticancer effect to FA receptors overexpressed cancer cells.

10.1039/c6ra17260a

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Citations (13)

Analog Memristors Based on Thickening/Thinning of Ag Nanofilaments in Amorphous Manganite Thin Films

ACS Applied Materials & Interfaces (2013)

Dongqing Liu Haifeng Cheng Xuan Zhu Guang Wang Nannan Wang

We developed an analog memristor based on the thickening/thinning of Ag nanofilaments in amorphous La(1-x)Sr(x)MnO3 (a-LSMO) thin films. The Ag/a-LSMO/Pt memristor exhibited excellent pinched hysteresis loops under high-excitation frequency, and the areas enclosed by the pinched hysteresis loops shrank with increasing excitation frequency, which is a characteristic typical of a memristor. The memristor also showed continuously tunable synapselike resistance and stable endurance. The a-LSMO thin films in the memristor acted as a solid electrolyte for Ag(+) cations, and only the Ag/a-LSMO/Pt memristor electroformed with a larger current compliance easily exhibited high-frequency pinched hysteresis loops. On the basis of the electrochemical metallization (ECM) theory and electrical transport models of quantum wires and nanowires, we concluded that the memristance is ultimately determined by the amount of charge supplied by the external current. The state equations of the memristor were established, and charge was the state variable. This study provides a new analog memristor based on metal nanofilaments thickening/thinning in ECM cells, which can be extended to other resistive switching materials. The new memristor may enable the development of beyond von Neumann computers.

Memristor

Hysteresis

Electroforming

Manganite

Resistive touchscreen

Memistor

10.1021/am403497y

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Citations (88)

Memristive Properties of Transparent $({\rm La},\,{\rm Sr}){\rm MnO}_{3}$ Thin Films Deposited on ITO Glass at Room Temperature

IEEE Electron Device Letters (2013)

Dongqing Liu Haifeng Cheng Guang Wang Xuan Zhu Zhengzheng Shao

Amorphous La _1-x Sr _x MnO ₃ (a-LSMO) thin films were deposited on indium tin oxide (ITO) glass at room temperature by radio frequency magnetron sputtering. The transmittance of a-LSMO (10 nm)/ITO/glass is 75% at 600 nm, which is promising for transparent memristors. The Ag/a-LSMO (10 nm)/ITO/glass memristor exhibits nonvolatile bipolar resistive switching properties with a resistance ratio , stable write/erase endurance , and long retention. The memristor can exhibit pinched hysteresis loops under high-frequency voltage excitations. These memristive properties are ascribed to diameter changes of the Ag nanofilament in the a-LSMO.

Indium tin oxide

Hysteresis

Memristor

10.1109/led.2013.2284927

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Citations (15)