Liaoxin Sun

Shanghai Institute of Technical Physics

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Xuechu Shen

Fudan University

Zhanghai Chen

Xiamen University of Technology

Wei Lü

University of Chinese Academy of Sciences

Hongxing Dong

Shanghai Institute of Optics and Fine Mechanics

Anping Ge

Shanghai Institute of Technical Physics

Wei Xie

Beike Biotechnology (China)

Bo Zhang

Chinese Academy of Sciences

Saifeng Zhang

Shanghai University

Xinchao Zhao

Shanghai Institute of Technical Physics

Shaowei Wang

Shandong Academy of Agricultural Machinery Sciences

Cooperative Institutions

Chinese Academy of Sciences

150

University of Chinese Academy of Sciences

122

Shanghai Institute of Technical Physics

119

Fudan University

Huazhong University of Science and Technology

Nanjing University

University of Science and Technology of China

Shanghai Jiao Tong University

University of Shanghai for Science and Technology

Collaborative Innovation Center of Advanced Microstructures

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Semiconductor microstructure optical resonators

Frontiers in Optics (2015)

Hongxing Dong Liaoxin Sun Yang Liu Zhanghai Chen Long Zhang

High quality ZnO microstructure optical cavities with different morphologies were fabricated. By using the spatially resolved spectroscopic technique, optical resonant modes were directly observed and further investigated systematically.

10.1364/ls.2015.lth4d.1

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Citations (0)

Optical Waveguide of Buckled CdS Nanowires Modulated by Strain-Engineering

ACS Photonics (2017)

Fangfang Sun Liaoxin Sun Bo Zhang Gang Chen Hailong Wang

The optical waveguides under subwavelength scale are highly desirable for on-chip photonics to link various optical elements or to realize logical operations. In this work, the optical waveguiding along a single buckled CdS (cadmium sulfide) nanowire is comprehensively investigated at room temperature. By carefully scanning excitation along buckled nanowire with fixed PL detection at nanowire end, we present unique waveguide propagation loss strongly modulated by strain effect, which is distinct from the waveguide behavior of straight nanowires. When laser spot moves to buckling part, the light waveguide propagation loss is significantly reduced because band-to-band reabsorption effect during light propagation is greatly suppressed by tensile strain-induced bandgap shrinking. In addition, a dynamic manipulating waveguide propagation based on a controllable buckling of nanowires is also carried out; the solely strain-dependent waveguiding intensity loss and intensity modulation nearly 400% are clearly demonstrated. Our results indicate that strain-modulated semiconductor nanowires would pave new way to develop multifunctional optical elements and interconnects for integrated and flexible nanophotonic devices.

Waveguide

Nanophotonics

Modulation (music)

10.1021/acsphotonics.7b01348

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Citations (14)

Near-infrared electroluminescence and self-powered photodetector based on graphene/layered γ-InSe Schottky junction

Liaoxin Sun Anping Ge Qixiao Zhao Wenji Jing Dongjie Zhou

The multifunctional integrated on-chip near-infrared (NIR) light source and detection devices based on vdW layered materials are increasingly sought after due to their broad applications, including optoelectronic communication, computing, and sensing. Most of luminescence or detection devices based on vdW layered materials are demonstrated to have only a single function due to the limitation of material properties. Here, we demonstrated a multifunctional integrated on-chip NIR electroluminescence (EL) and self-powered photodetector (SPPD) device constructed by stacking few-layer graphene (Gr) and layered γ-InSe to form asymmetric Gr/γ-InSe/Gr heterostructure. Room temperature electrically driven NIR from γ-InSe was successfully achieved by the high quality Schottky junction (rectification ratio up to "5×" 〖"10" 〗^"3" ), with a turn-on voltage of ~ 1.4 V. The γ-InSe EL maintained over 90 % initial EL intensity after two hours continuous operation in air. Meanwhile, the Gr/γ-InSe/Gr SPPD exhibits a broad spectrum photoresponse (405-940nm), low specific noise current (8.7"×" 10-26 A2/Hz), high specific detectivity (~ 108 Jones @ 405 nm) and high-quality reflective imaging. Our results establish a simple preparation and tunable vdW layered material multifunctional integrated NIR EL and SPPD device, indicating the promise of γ-InSe for on-chip integrated optoelectronic devices.

10.1364/opticaopen.27208773

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Enhancement of magnonic frequency combs by exceptional points

Nature Physics (2024)

Congyi Wang Jinwei Rao Zhijian Chen Kaixin Zhao Liaoxin Sun

10.1038/s41567-024-02478-0

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Citations (15)

Spatially resolved surface-related exciton polariton dynamics in a single ZnO tetrapod

Solid State Communications (2017)

Fangfang Sun Liaoxin Sun Bo Zhang Hailong Wang

Tetrapod (structure)

Whispering gallery

10.1016/j.ssc.2017.12.003

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Citations (1)

Robust exciton-polariton effect in a ZnO whispering gallery microcavity at high temperature

Applied Physics Letters (2012)

Saifeng Zhang Wei Xie Hongxing Dong Liaoxin Sun Yanjing Ling

A robust exciton-polariton effect in a ZnO whispering gallery microcavity well above room temperature is presented. The lower polariton branches are tuned by current induced thermal effect. The red shift can be as large as ∼40 meV. It is found that the strong coupling can be preserved and the polariton-phonon interaction quenching effect remains up to ∼550 K, while the Rabi splitting is about 330 meV. The tuning speed is in the order of millisecond, showing its potential in polariton-based optoelectronic device application.

Whispering gallery

Wide-bandgap semiconductor

Millisecond

10.1063/1.3693378

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Citations (27)

Whispering gallery modes in indium oxide hexagonal microcavities

Applied Physics Letters (2009)

Hongxing Dong Zhanghai Chen Liaoxin Sun Jian Lü Wei Xie

We report on the use of In2O3 nanowires with hexagonal cross section as optical whispering gallery resonators. The single-crystal In2O3 nanowires were fabricated by an in situ thermal oxidation method. Whispering gallery modes (WGMs) in the visible spectral range were directly observed at room temperature. Due to the slight tapering of the nanowires, the energies and orders of the WGMs were modulated when excitations were scanned along the c-axis (length) of the nanowires. The experimental results were explained and fitted well with a plane wave interference model and Cauchy dispersion formula for refractive indices.

Tapering

Whispering gallery

Crystal (programming language)

10.1063/1.3126443

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Citations (29)

One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature

A. A. P. Trichet Liaoxin Sun G. Pavlovic N. A. Gippius G. Malpuech

Phonon damping is the main source of pure dephasing in the solid state, limiting many fundamental quantum effects to low temperature observations. Here we show how excitons in semiconductors can be totally decoupled from the phonon bath, even at room temperature, thanks to their strong interaction with photons. To do so, we investigated ZnO microwires, a new semiconductor nanostructure made of large band-gap material where the light can be trapped and guided into whispering gallery modes. In this system, the very large coupling regime between exciton and photon results in unusual exciton-polariton of one-dimensional character and Rabi splitting as large as 300meV. We find that polariton modes of excitonic fraction up to 75% exhibit no thermal broadening up to room temperature. We show that this remarkable behavior is due to the very large Rabi splitting as compared to the LO phonon energy.

Dephasing

Homogeneous broadening

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Single-mode lasing and 3D confinement from perovskite micro-cubic cavity

Journal of Materials Chemistry C (2018)

Beier Zhou Hongxing Dong Mingming Jiang Weihao Zheng Liaoxin Sun

Single-mode lasing with extreme narrow linewidth of 0.064 nm is achieved based on 3D CsPbBr₃ microcube laser under room temperature.

Laser linewidth

Mode (computer interface)

10.1039/c8tc03543a

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Citations (39)

Selected‐Area Chemical Nanoengineering of Vanadium Dioxide Nanostructures Through Nonlithographic Direct Writing

Advanced Materials Interfaces (2018)

Shuxiao Wang Wei Wei Tiantian Huang Tianning Zhang Zhimin Chen

Abstract Nanoscale selected‐area chemical engineering is challenging but critical to manipulate carrier transport and realize multifunctional characteristics in advanced devices. Undesired chemical contaminants might occur in conventional lithographic processes and would degrade the characteristics of chemical‐sensitive vanadium oxide nanostructures. Here, a facile strategy is introduced to chemically engineer VO 2 nanostructures using a nonlithographic direct‐writing process without chemical reagents and sacrificial layers. Nanoscale selected‐area photooxidation promotes the formation of VO 2+ x patterns in VO 2 nanostructures. Selected‐area chemical nanoengineering allows direct designing and engineering of correlated vanadium oxides for controllable Mott field‐effect transistors and memory devices.

Nanoengineering

Vanadium Oxide

10.1002/admi.201800974

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Citations (12)