Eva C. Peters

Stuttgart Observatory

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Marko Burghard

Max Planck Institute for Solid State Research

Klaus Kern

École Polytechnique Fédérale de Lausanne

A. J. M. Giesbers

Philips (Netherlands)

Eduardo J. H. Lee

Universidad Autónoma de Madrid

Amit Kumar

Bhabha Atomic Research Centre

Cooperative Institutions

Max Planck Institute for Solid State Research

Max Planck Society

École Polytechnique Fédérale de Lausanne

Stuttgart Observatory

Paradigm (France)

Max Planck Institute for Metabolism Research

Eindhoven University of Technology

Nanothinx (Greece)

MacDiarmid Institute for Advanced Materials and Nanotechnology

Victoria University of Wellington

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Gate dependent photocurrents at a graphene p-n junction

Applied Physics Letters (2010)

Eva C. Peters Eduardo J. H. Lee Marko Burghard Klaus Kern

We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by local chemical doping of a graphene sheet. The photocurrent signal at the junction was found to be most prominent for gate voltages between the two Dirac points of the oppositely doped graphene regions. The gate dependence of this signal agrees well with simulations based upon the Fermi level difference between the two differently doped sections. It is concluded that the photocurrent maps are dominated by the built-in electric field, with only a minor photothermoelectric contribution.

Photocurrent

SIGNAL (programming language)

Photoconductivity

10.1063/1.3505926

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Citations (129)

Self-assembled magnetic nanoparticles of Prussian blue on graphene

RSC Advances (2014)

Amit Kumar Eva C. Peters Marko Burghard

Non-covalent deposition of Prussian blue on graphene.

Prussian blue

Deposition

10.1039/c4ra01079e

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Citations (6)

Magnetotransport in Graphene

Eva C. Peters

Keywords: Graphene ; Confinement ; Graphene Bilayer ; Electric and Magnetic Fields ; Quantum Hall Effect ; Band Gap ; Variable Range Hopping These Ecole polytechnique federale de Lausanne EPFL, n° 5896 (2013)Programme doctoral PhysiqueFaculte des sciences de baseInstitut de physique de la matiere condenseeLaboratoire de science a l'echelle nanometriqueJury: R. Houdre (president), J. Brugger, J. Eroms, P. Groning Public defense: 2013-9-18 Reference doi:10.5075/epfl-thesis-5896Print copy in library catalog Record created on 2013-09-09, modified on 2017-05-12

Bilayer graphene

10.5075/epfl-thesis-5896

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Scaling in the quantum Hall regime of graphene Corbino devices

Applied Physics Letters (2014)

Eva C. Peters A. J. M. Giesbers Marko Burghard Klaus Kern

The scaling behavior of graphene devices in Corbino geometry was investigated through temperature dependent conductivity measurements under magnetic field. Evaluation of the Landau level width as a function of temperature yielded a relatively low temperature exponent of κ = 0.16 ± 0.05. Furthermore, an unusually large value close to 7.6 ± 0.9 was found for the universal scaling constant γ, while the determined inelastic scattering exponent of p = 2 is consistent with established scattering mechanisms in graphene. The deviation of the scaling parameters from values characteristic of conventional two-dimensional electron gases is attributed to an inhomogeneous charge carrier distribution in the Corbino devices. Direct evidence for the presence of the latter could be gained by spatially resolved photocurrent microscopy away from the charge neutrality point of the devices.

Photocurrent

Landau quantization

Weak localization

Exponent

Scattering rate

10.1063/1.4878396

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Citations (25)