An attempt has been made to fabricate tunnel-injection type poly-crystalline Si thin film transistors (TFTs) with low-resistivity channel layer and Schottky barrier contacts at source and drain. The tunneling current through reverse-biased Schottky contact at the source is controlled by applying gate bias voltage. Although the optimized geometry of the devices is not designed because of limitation of our premature fabrication processes, it is confirmed that the performance similar to those of conventional poly-Si TFTs reported so far is achieved. The equivalent field-effect mobility estimated from FET characteristics is up to 120 cm 2 /V.s.
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