Ren‐Bing Tan

Chongqing University of Science and Technology

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Hua Qin

Yangzhou University

Xiao-Fei Zhang

Women's Hospital, School of Medicine, Zhejiang University

Baoshun Zhang

Suzhou Institute of Nano-tech and Nano-bionics

Lin Wen

Chongqing Normal University

Shougang Zhang

National Time Service Center

Yajun Wang

Shanxi University

Xinxing Li

Chinese Academy of Sciences

Lin-Xue Wang

Shaanxi University of Science and Technology

Xiaoyu Zhang

Xinzhou Teachers University

Zhongxin Zheng

Suzhou Institute of Nano-tech and Nano-bionics

Cooperative Institutions

Chinese Academy of Sciences

University of Chinese Academy of Sciences

Suzhou Institute of Nano-tech and Nano-bionics

University of Science and Technology of China

Chongqing University

Chongqing University of Science and Technology

National Time Service Center

Central South University

Sichuan University

National Space Science Center

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Coupler for butt-coupling between edge-emitting lasers and inverted Si taper waveguide

International Journal of Modern Physics B (2019)

Baoguang Sun Congzhong Cai Haojie Ni Ren‐Bing Tan

A novel design and analysis of a butt-coupler are presented to be coupled with an edge-emitting laser and a silicon waveguide. The coupler is fairly effective when used with an edge-emitting laser of a certain integrated size and a high refractive index core material. Butt-coupling is not sensitive to polarization as both TE and TM modes achieve similar efficiency. The laser alignment tolerance and silicon waveguide gap in both lateral and vertical positions were studied. Although the air gap between the laser and the silicon cladding reduces coupling efficiency greatly, gap filling can help solve this problem. This design is proved to be quite effective in dealing with high index contrast and huge size mismatch between the laser and semiconductor waveguide.

Cladding (metalworking)

Waveguide

10.1142/s0217979219500747

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Citations (1)

Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas

Applied Physics Letters (2011)

Y. F. Sun J. D. Sun Yu Zhou Ren‐Bing Tan Cheng Zeng

This letter focuses on the fabrication and characterization of a terahertz detector integrated with a group of low pass filters and resonant antennas. The detector operates as a self-mixer on GaN/AlGaN high electron mobility transistor (HEMT). At room temperature, a strong dc photocurrent is produced with the aid of the antennas and filters. The responsivity of our HEMT device is estimated to be 53 mA/W and a noise equivalent power of 1 nW/Hz can be achieved at 300 K. In addition, the sensor properties of a similar HEMT detector without filter are tested as a comparison.

Photocurrent

Noise-equivalent power

Wide-bandgap semiconductor

10.1063/1.3601489

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Citations (39)

Vortices in a rotating two-component Bose–Einstein condensate with tunable interactions and harmonic potential

Annals of Physics (2014)

Xiao-Fei Zhang Zhijing Du Ren‐Bing Tan Ruifang Dong Hong Chang

Harmonic potential

Harmonic

Component (thermodynamics)

Lattice (music)

10.1016/j.aop.2014.04.015

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Citations (12)

Terahertz filters based on frequency selective surfaces for high-speed terahertz switch

Journal of Applied Physics (2013)

Xiaoyu Zhang Ren‐Bing Tan Zhongxin Zheng Xinxing Li Zhipeng Zhang

We design and fabricate two terahertz (THz) filters based on frequency selective surfaces' structures (FSSs) on single crystal sapphire substrate, which show high and low transmissivities to THz electromagnetic waves, respectively. The difference of THz transmissivity between two filters reaches up to 72% at the resonance frequency of 1.35 THz. The THz filtering effect is due to the resonant coupling between THz wave and periodic metallic elements and the filter operating frequency can be tuned systematically by the geometry of FSSs. The good agreement between experiments and finite difference time domain simulation indicates that a high-speed THz switch could be realized for THz active devices based on the FSSs.

Selective surface

10.1063/1.4773341

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Citations (28)

Spin–Orbit-Coupled Bose–Einstein Condensates in Radially Periodic Potentials

Journal of the Physical Society of Japan (2019)

Yajun Wang Lin Wen Hui Guo Ren‐Bing Tan Shougang Zhang

We consider a pseudospin-1/2 Bose–Einstein condensate with Rashba type of spin–orbit coupling and trapped in radially periodic potentials. The effects of spin–orbit coupling, amplitude of the lattice potential, and contact interaction, on the ground-state phases of the system are investigated numerically for two different types of radial lattices, i.e., with phase constant δ = 0 and π. We show that the system has a rich variety of ground-state phases, showing strong dependence on these controllable parameters. In addition, we find that for both types of radial lattices, such parameters can be used to induce desirable ground-state structures.

Coupling constant

Lattice (music)

Spin–orbit interaction

Orbit (dynamics)

10.7566/jpsj.88.024005

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Citations (5)

Direct observation of sub-threshold field emission from silicon nanomembranes

Journal of Applied Physics (2011)

Hua Qin Ren‐Bing Tan Jonghoo Park Hyun‐Seok Kim Robert H. Blick

Excited by an energetic electron beam, field enhanced electron emission from a silicon nanomembrane is examined by using a local current probe. The experiments reveal clear transitions from conventional secondary electron emission (SEE) to sub-threshold field electron emission (SFE) and then to conventional field electron emission (FEE). An electron yield of more than 104 is obtained and a model of sub-threshold emission is verified. Ultra sensitive charge/particle detectors could be realized by implementing sub-threshold field emission in nano scale structures, where electron excitations occur within the screen depth of surface electric field.

Secondary emission

10.1063/1.3597782

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Citations (4)

Enhancement of localized surface plasmon resonance by inter-band transitions in an Au based nanoshell structure

Journal of Applied Physics (2019)

H. M. Dong Fangwei Han Yifeng Duan X. P. Shen Fei Huang

We present a theoretical study on plasmonic properties of an Au based nanoshell structure in which the localized surface plasmon resonances (LSPRs) and the inter-band electronic transitions (IBTs) are presented. The optical properties of Au nanoshell are depicted by a corrected dielectric function of Drude-Lorentz mode, and Mie theory is applied to calculate the absorption efficiencies. It shows that there are two localized surface plasmon absorption peaks, which are induced from the outside LSPRs and the inside LSPRs, respectively. The positions of these two peaks can shift by changing core radius and shell thickness. By varying the core radius and thickness of the shells, the LSPRs are modulated with the IBTs, leading to the strong interactions between the LSPRs and the IBTs. It is found that the LSPRs and IBTs can couple with each other and the new resonance absorption peaks can be observed. Our results show that the LSPRs are enhanced by the IBTs. This enhancement can be applied to improve biosensor signals and advanced plasmonic applications.

Nanoshell

Localized surface plasmon

10.1063/1.5058186

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Citations (1)

Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors

Chinese Physics B (2013)

Ren‐Bing Tan Hua Qin Xiaoyu Zhang Wen Xu

We present a theoretical study on the electric field driven plasmon dispersion of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs). By introducing a drifted Fermi—Dirac distribution, we calculate the transport properties of the 2DEG in the AlGaN/GaN interface by employing the balance-equation approach based on the Boltzmann equation. Then, the nonequilibrium Fermi—Dirac function is obtained by applying the calculated electron drift velocity and electron temperature. Under random phase approximation (RPA), the electric field driven plasmon dispersion is investigated. The calculated results indicate that the plasmon frequency is dominated by both the electric field E and the angle between wavevector q and electric field E. Importantly, the plasmon frequency could be tuned by the applied source—drain bias voltage besides the gate voltage (change of the electron density).

Random phase approximation

10.1088/1674-1056/22/11/117306

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Citations (6)

Modeling an antenna-coupled graphene field-effect terahertz detector

Applied Physics Letters (2013)

Ren‐Bing Tan Hua Qin Jiandong Sun Xiaoyu Zhang Baoshun Zhang

The effect of ambipolar carriers on terahertz self-mixing is theoretically investigated in an antenna-coupled graphene field-effect terahertz (GFET) detector by taking into account the spatial distributions of the charge carriers and the terahertz field. The model predicts that the charge and field distributions can be tuned by the gate voltage so that they match up with each other and enhance the photocurrent. Such a cooperative self-mixing does not occur in unipolar FET detectors. A GFET detector with a moderate carrier mobility could offer current responsivity of a few A/W and noise-equivalent power below 50 pW/Hz at room temperature.

Ambipolar diffusion

Noise-equivalent power

Photocurrent

Electron Mobility

Charge carrier

10.1063/1.4826118

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Citations (11)

Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor

Chinese Physics B (2015)

Xiaoyu Zhang Ren‐Bing Tan Jiandong Sun Xinxing Li Yu Zhou

An AlGaN/GaN high electron mobility transistor (HEMT) device is prepared by using a semiconductor nanofabrication process. A reflective radio-frequency (RF) readout circuit is designed and the HEMT device is assembled in an RF circuit through a coplanar waveguide transmission line. A gate capacitor of the HEMT and a surface-mounted inductor on the transmission line are formed to generate LC resonance. By tuning the gate voltage V-g, the variations of gate capacitance and conductance of the HEMT are reflected sensitively from the resonance frequency and the magnitude of the RF reflection signal. The aim of the designed RF readout setup is to develop a highly sensitive HEMT-based detector.

10.1088/1674-1056/24/10/105201

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Citations (6)