Eric N. Jin

United States Naval Research Laboratory

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Matthew T. Hardy

United States Naval Research Laboratory

D. S. Katzer

United States Naval Research Laboratory

Neeraj Nepal

United States Naval Research Laboratory

Brian P. Downey

United States Naval Research Laboratory

F. J. Walker

Yale University

Charles Ahn

Yale University

David J. Meyer

United States Naval Research Laboratory

Lior Kornblum

Technion – Israel Institute of Technology

Virginia D. Wheeler

United States Naval Research Laboratory

Vikrant J. Gokhale

United States Naval Research Laboratory

Cooperative Institutions

United States Naval Research Laboratory

University of California, Berkeley

United States Navy

University of Maryland, College Park

Interface (United States)

Yale University

Georgia Institute of Technology

Texas A&M University

Lawrence Berkeley National Laboratory

Massachusetts Institute of Technology

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Electronic transport of titanate heterostructures and their potential as channels on (001) Si

Journal of Applied Physics (2015)

Lior Kornblum Eric N. Jin Omor Shoron Mohamed Seghir Boucherit Siddharth Rajan

Perovskite oxides and their heterostructures have demonstrated considerable potential for devices that require high carrier densities. These oxides are typically grown on ceramic substrates that suffer from low thermal conductivity, which limits performance under high currents, and from the limited size of substrates, which precludes large scale integration and processing. We address both of these hurdles by integrating oxide heterostructures with high carrier density 2D electron gases (2DEGs) directly on (001) Si. 2DEGs grown on Si show significant improvement of the high current performance over those grown on oxide substrates, a consequence of the higher thermal conductivity of the substrate. Hall analysis, transmission line measurements, and the conductance technique are employed for a detailed analysis of the carrier density, contact resistance, mobility, and electron drift velocities. Current densities of 10 A/cm are observed at room temperature with 2.9 × 1014 electrons/cm2 at a drift velocity exceeding 3.5 × 105 cm/s. These results highlight the promise of oxide 2DEGs integration on Si as channels for high electron density devices.

Electron Mobility

10.1063/1.4930140

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Citations (12)

Switching a magnetic vortex by interlayer coupling in epitaxially grown Co/Cu/Py/Cu(001) trilayer disks

Journal of Physics Condensed Matter (2010)

J. Wu David Carlton E Oelker J S Park Eric N. Jin

Epitaxial Py/Cu/Co/Cu(001) trilayers were patterned into micron sized disks and imaged using element-specific photoemission electron microscopy.By varying the Cu spacer layer thickness, we study how the coupling between the two magnetic layers influences the formation of magnetic vortex states.We find that while the Py and Co disks form magnetic vortex domains when the interlayer coupling is ferromagnetic, the magnetic vortex domains of the Py and Co disks break into anti-parallel aligned multidomains when the interlayer coupling is antiferromagnetic.We explain this result in terms of magnetic flux closure between the Py and Co layers for the antiferromagnetic coupling case.

Inductive coupling

10.1088/0953-8984/22/34/342001

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Citations (12)

Band offset measurement of oxygen annealed SrTiO 3 /Si

APS (2016)

Eric N. Jin Lior Kornblum Charles Ahn F. J. Walker

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Design of a vector magnet for the measurements of anisotropic magnetoresistance and rotational magneto-optic Kerr effect

Review of Scientific Instruments (2012)

J. Li Eric N. Jin Ho Sung Son A. Tan Wei Cao

A vector magnet is designed and assembled with two electromagnets to produce a rotational magnetic field in any direction within a plane. This design allows a rotation of the magnetic field without a mechanical rotation of the magnets. The fast speed of the field rotation (~10 s for a complete 360° rotation) and the stability against mechanical vibration easily overcome the slow drifting effect in anisotropic magnetoresistance (AMR) and rotational magneto-optic Kerr effect (ROTMOKE) measurements. As an example we applied this vector magnet to carry out AMR and ROTMOKE measurements on epitaxial growth of Fe(10 nm)∕MgO(001) films. The result demonstrates the stability and high quality of the vector magnet in determining the magnetic anisotropy of magnetic thin films using AMR and ROTMOKE techniques.

Electromagnet

Magneto

10.1063/1.3698297

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Citations (27)

Effect of NiO spin orientation on the magnetic anisotropy of the Fe film in epitaxially grown Fe/NiO/Ag(001) and Fe/NiO/MgO(001)

Physical Review B (2010)

Wondong Kim Eric N. Jin J. Wu Andrew J. Park Elke Arenholz

Single-crystalline Fe/NiO bilayers were epitaxially grown on Ag(001) and on MgO(001), and investigated by low-energy electron-diffraction, magneto-optic Kerr effect, and x-ray magnetic linear dichroism (XMLD). We find that while the Fe film has an in-plane magnetization in both Fe/NiO/Ag(001) and Fe/NiO/MgO(001) systems, the NiO spin orientation changes from in-plane direction in Fe/NiO/Ag(001) to out-of-plane direction in Fe/NiO/MgO(001). These two different NiO spin orientations generate remarkable different effects that the NiO induced magnetic anisotropy in the Fe film is much greater in Fe/NiO/Ag(001) than in Fe/NiO/MgO(001). XMLD measurement shows that the much greater magnetic anisotropy in Fe/NiO/Ag(001) is due to a $90\ifmmode^\circ\else\textdegree\fi{}$ coupling between the in-plane NiO spins and the in-plane Fe spins.

Non-blocking I/O

10.1103/physrevb.81.174416

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Citations (42)

Epitaxial Single-Crystal ScAlN on 4H-SiC for High-Velocity, Low-Loss SAW Devices

Vikrant J. Gokhale Brian P. Downey Matthew T. Hardy Eric N. Jin J.A. Roussos

This report presents some of the first experimental characterization of surface acoustic wave (SAW) devices using single-crystal ScAlN epitaxially grown on SiC. Due to the excellent wave guiding provided by the ScAlN/SiC heterostructure, SAW phase velocities greater than 12,000 m/s are measured, higher than comparable ScAlN SAW devices on other substrates. The phase velocity dispersion for measured devices compares well with simulated values. We observe up to k ² =0.52% even for very small thickness to wavelength ratios ( ). We show that epitaxial ScAlN/SiC can achieve extremely low SAW propagation loss ( ), comparable to state-of-the-art piezoelectric/diamond SAW devices, and are linear at CW RF power levels up to ≈30 dBm (1W), with 1 dB gain compression at 34 dBm and an IIP3 of 45 dBm.

Crystal (programming language)

10.1109/mems46641.2020.9056271

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Continuous spin reorientation transition in epitaxial antiferromagnetic NiO thin films

Physical Review B (2011)

J. Li Elke Arenholz Yang Meng A. Tan Andrew J. Park

Fe/NiO/MgO/Ag(001) films were grown epitaxially, and the Fe and NiO spin orientations were determined using x-ray magnetic dichroism. We find that the NiO spins are aligned perpendicularly to the in-plane Fe spins. Analyzing both the in-plane and out-of-plane spin components of the NiO layer, we demonstrate unambiguously that the antiferromagnetic NiO spins undergo a continuous spin reorientation transition from the in-plane to out-of-plane directions with increasing of the MgO thickness.

Non-blocking I/O

10.1103/physrevb.84.012406

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Citations (21)

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

APL Materials (2021)

Eric N. Jin Brian P. Downey Vikrant J. Gokhale J.A. Roussos Matthew T. Hardy

Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical properties of high dielectric constant Sr1−xCaxTiO3 epitaxial layers grown on AlGaN/GaN/4H-SiC high-electron-mobility transistor structures with compositions ranging from x = 0 to x = 0.53 and oxide film thicknesses ranging from 7 to 126 nm. We show (111) orientation in the SrCaTiO3 (SCTO) thin films using a 1 nm (100) TiO2 buffer layer grown by RF-plasma-assisted oxide molecular beam epitaxy. Current–voltage measurements show up to 5 orders of magnitude reduced leakage with SCTO films when compared to Schottky contacted samples. Capacitance–voltage measurements show minimal hysteresis, an extracted dielectric constant (κ) as high as 290, and a fixed positive interface charge density of 2.38 × 1013 cm−2 at the SCTO/AlGaN interface. The direct integration of the SCTO layer does not significantly affect the two-dimensional electron gas (2DEG) density or the channel mobility with the 2DEG density as a function of SCTO thickness having good agreement with 1D Poisson–Schrödinger simulations. RF characterization of interdigitated capacitors using the SCTO films on unintentionally doped GaN/SiC shows that the films maintain their high κ into microwave frequencies and only exhibit a slight reduction in κ with increased lateral electric fields. These results demonstrate that the integration of a high-κ oxide with GaN can potentially improve electric field management in RF high-electron-mobility transistors and increase the device breakdown voltage without significant degradation to channel transport properties.

Electron Mobility

Wide-bandgap semiconductor

10.1063/5.0063295

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Citations (9)

Band offset engineering of 2DEG oxide systems on Si

Bulletin of the American Physical Society (2015)

Eric N. Jin Lior Kornblum Divine P. Kumah Ke Zou C. Broadbridge

Band offset

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RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena (2019)

D. S. Katzer Neeraj Nepal Matthew T. Hardy Brian P. Downey David F. Storm

RF-plasma molecular-beam epitaxy was used to epitaxially grow 3–150-nm-thick metallic TaNx thin films on hexagonal SiC substrates. Single-phase hexagonal γ-Ta2N films were obtained when the starting substrate temperature was ∼900 °C and the active N to Ta ratio was ∼2.5–3. The films were characterized using in situ reflection high-energy electron diffraction and ex situ atomic force microscopy, contactless sheet resistance, x-ray diffraction, and cross-sectional transmission electron microscopy. Smooth, single-crystal, low-resistivity films of epitaxial, hexagonal γ-Ta2N on SiC are demonstrated for films at least ∼50-nm-thick.

10.1116/1.5089779

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Citations (6)