Christophe Raynaud

Institut National des Sciences Appliquées de Lyon

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Dominique Planson

Laboratoire Ampère

101

Mihai Lazar

Centre de Nanosciences et de Nanotechnologies

Jean-Pierre Chante

Laboratoire Ampère

Pierre Brosselard

Université Claude Bernard Lyon 1

Hervé Morel

Laboratoire Ampère

Dominique Tournier

Laboratoire Ampère

Sigo Scharnholz

Institut Franco-Allemand de Recherches de Saint-Louis

Pascal Bevilacqua

Université Claude Bernard Lyon 1

Cyril Buttay

Laboratoire Ampère

Gabriel Ferro

Université Claude Bernard Lyon 1

Cooperative Institutions

Centre National de la Recherche Scientifique

165

Institut National des Sciences Appliquées de Lyon

105

Université Claude Bernard Lyon 1

Laboratoire Ampère

École Centrale de Lyon

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

CEA LETI

Laboratoire de Génie Électrique de Grenoble

CEA Grenoble

Institut polytechnique de Grenoble

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Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization

Christophe Raynaud Duy‐Minh Nguyen Nicolas Dheilly Dominique Tournier Pierre Brosselard

This chapter contains sections titled: Introduction Theory and principle of OBIC: calculation of the current Description of the experimental set-up Study of device termination technique Determination of carrier lifetime Determination of ionization coefficients Conclusion References

Characterization

10.1002/9783527629053.ch12

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Citations (1)

Deep Level Transient Fourier Spectroscopy Investigation of Electron Traps on AlGaN/GaN-on-Si Power Diodes

Energies (2023)

Florian Rigaud-Minet Christophe Raynaud J. Buckley Matthew Charles Patricia Pimenta‐Barros

Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact’s etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level ET ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 (ET = 0.47–0.48 eV; σ ≈ 10−15 cm2) and D7 (ET = 0.57 eV; σ = 4.45 × 10−12 cm2). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as CN-CGa. Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: NGa.

Deep-level transient spectroscopy

10.3390/en16020599

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Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Materials science forum (2009)

Christophe Raynaud Duy Minh Nguyen Pierre Brosselard Amador Pérez‐Tomás Dominique Planson

Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are protected with surrounding junction termination extension and p+ ring. Temperature dependence of the doping level is first calculated. Then admittance spectra allow detecting defects and extracting their activation energies and capture cross sections. Results seem to indicate the presence of interfacial defects and defects due to the implantation process.

Admittance

Metal–semiconductor junction

Characterization

Diffusion capacitance

10.4028/www.scientific.net/msf.615-617.671

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OBIC Analysis of Different Edge Terminations of Planar 1.6 kV 4H-SiC Diodes

Materials science forum (2007)

Christophe Raynaud Daniel Loup Philippe Godignon Raúl D. Rodriguez Dominique Tournier

High voltage SiC semiconductor devices have been successfully fabricated and some of them are commercially available [1]. To achieve experimental breakdown voltage values as close as possible to the theoretical value, i.e. value of the theoretical semi-infinite diode, it is necessary to protect the periphery of the devices against premature breakdown due to locally high electric fields. Mesa structures and junction termination extension (JTE) as well as guard rings, and combinations of these techniques, have been successfully employed. Each of them has particular drawbacks. Especially, JTE are difficult to optimize in terms of impurity dose to implant, as well as in terms of geometric dimensions. This paper is a study of the spreading of the electric field at the edge of bipolar diodes protected by JTE and field rings, by optical beam induced current.

PIN diode

High Voltage

10.4028/www.scientific.net/msf.556-557.1007

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Citations (2)

A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery

Materials science forum (2005)

Pierre Brosselard Thierry Bouchet Dominique Planson Sigo Scharnholz Gontran Pâques

Overcoming the physical limits of silicon, silicon carbide shows a high potential for making high voltage thyristors. After a simulation based optimization of the main thyristor parameters, including JTE protection and a SiO2 layer passivation, 4H-SiC GTO thyristors were realized and characterized. Designed for a theoretical blocking capability of nearly 6 kV, the electrical characterization of all device structures revealed a maximum blocking voltage of 3.5 kV. Comparing simulation and measurement suggests that a negative oxide charge density of ~ 2×1012 cm-2 causes the decrease in electrical strength.

Passivation

Blocking (statistics)

MOS-controlled thyristor

10.4028/www.scientific.net/msf.483-485.1005

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State of the art of high temperature power electronics

Materials Science and Engineering B (2010)

Cyril Buttay Dominique Planson Bruno Allard Dominique Bergogne Pascal Bevilacqua

Power Electronics

10.1016/j.mseb.2010.10.003

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Citations (353)

Determination of 4H-SiC ionization rates using OBIC based on two-photon absorption

H. Hamad Christophe Raynaud Pascal Bevilacqua S Sharnholz Bertrand Vergne

Two-Photon Absorption

Source

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Characterization of 4H-SiC junction barrier Schottky diodes by admittance vs. temperature analyses

HAL (Le Centre pour la Communication Scientifique Directe) (2008)

Christophe Raynaud Duc Toan Nguyen Pierre Brosselard Amador Pérez‐Tomás Dominique Planson

Admittance

Characterization

Wide-bandgap semiconductor

Metal–semiconductor junction

Source

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Deep SiC etching with RIE

HAL (Le Centre pour la Communication Scientifique Directe) (2006)

Mihai Lazar Heu Vang Pierre Brosselard Christophe Raynaud Pierre Cremilleu

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Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies

Materials science forum (2008)

Tarek Ben Salah Samien Risaletto Christophe Raynaud Kamel Besbes Dominique Bergogne

A novel experimental set-up is developed and validated to characterize high voltage diodes in transient switching mode. Parameters extracted from DMTVCA and OCVD techniques, like ambipolar lifetime, epilayer thickness and doping level, diode area, are validated in a buck converter with resistive load. The experimental set-up allows to measure the current and voltage transient characteristics without noise and influence of high parasitic wiring. Experimental results are compared with device simulations and a good correlation is found.

Ambipolar diffusion

Transient (computer programming)

Resistive touchscreen

10.4028/www.scientific.net/msf.600-603.1031

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