F. Gaspard

UCLouvain

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R. Hérino

Université Joseph Fourier

Frank Müller

Saarland University

M. Ligeon

Centre National de la Recherche Scientifique

A. Bsiesy

Centre National de la Recherche Scientifique

Jean‐Claude Vial

Laboratoire Interdisciplinaire de Physique

R. Romestain

CEA Grenoble

Sophie Opfergelt

UCLouvain

Pierre Delmelle

UCLouvain

Adrien Bartoli

Centre National de la Recherche Scientifique

Georges Brière

Laboratoire Interdisciplinaire de Physique

Cooperative Institutions

Centre National de la Recherche Scientifique

Université Joseph Fourier

Université Grenoble Alpes

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Laboratoire Interdisciplinaire de Physique

CEA Grenoble

UCLouvain

CEA LIST

Laboratoire de Spectrométrie Ionique et Moléculaire

Institut Fourier

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Evidence from silicon isotopes for pulses of sub-ice microbial activity during winter in the Lena River

Goldschmidt Abstracts (2023)

Sophie Opfergelt F. Gaspard Catherine Hirst Laurence Monin Bennet Juhls

10.7185/gold2023.14938

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Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers

Surface Science Letters (1991)

A. Bsiesy Jean‐Claude Vial F. Gaspard R. Hérino M. Ligeon

Porous Silicon

10.1016/0167-2584(91)90037-r

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Citations (46)

Handling Missing Data in the Computation of 3D Affine Transformations

Lecture notes in computer science (2005)

Hanna Martinsson Adrien Bartoli F. Gaspard Jean‐Marc Lavest

Reprojection error

Rigid transformation

10.1007/11585978_7

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Citations (1)

Electrical Characterization of the Silicon‐Electrolyte Interface in the Conditions of Porous Silicon Formation

Journal of The Electrochemical Society (1991)

I. Ronga A. Bsiesy F. Gaspard R. Hérino M. Ligeon

A detailed experimental investigation of the electrical behavior of the silicon‐electrolyte interface is presented, which leads to the conclusion that electrochemical dissolution of p‐type silicon (doping range ) during porous silicon formation is mainly determined by the charge exchange at the silicon surface over the Schottky barrier formed at the interface through a thermoionic emission process. Impedance characterization of the interface allows the determination of the potential barrier formed between p‐silicon and hydrofluoric acid solutions, and analysis of I(V) characteristics shows that the silicon‐electrolyte junction behaves like a Schottky diode, with a particular dependence of the anodization potential vs. silicon doping which results from the voltage drop in the Helmholtz layer.

Hydrofluoric acid

Porous Silicon

10.1149/1.2085795

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Citations (58)

Comments on ``Effect of charge-transfer acceptors on dynamic scattering in a nematic liquid crystal''

Applied Physics Letters (1974)

F. Gaspard R. Hérino

Two recent papers describing the effects of charge-transfer acceptors on the electro-optical properties of a nematic liquid crystal are discussed on the basis of electrochemical considerations. A new interpretation is suggested which is consistent with the experimental facts.

Biaxial nematic

10.1063/1.1655007

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Citations (5)

3D optical measurement of curved edges

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (2007)

Sylvie Naudet-Collette F. Gaspard Hanna Martinsson Fabien Dekeyser

This paper presents a new photogrammetric approach to automatically reconstruct and measure the imprecision or deformations of metallic parts composed of curved edges. This approach uses images provided by a CCD camera moving around the part. The main purpose of the approach is to reconstruct curved edges automatically and accurately. For that, the solution uses data from the computer aided design model (CAD) and information extracted from the images. Experimental results on several parts present the precision and robustness of the process. They show that the proposed approach has a promising potential in automatic 3D control of industrial parts.

Robustness

10.1117/12.725663

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Adaptive Evolution of 3D Curves for Quality Control

IEEE International Symposium on Intelligent Signal Processing, (2007)

Hanna Martinsson F. Gaspard Alberto Bartoli Jean‐Marc Lavest

In the area of quality control by vision, the reconstruction of 3D curves is a convenient tool to detect and quantify possible anomalies. Whereas other methods exist that allow us to describe surface elements, the contour approach will prove to be useful to reconstruct the object close to discontinuities, such as holes or edges. We present an algorithm for the reconstruction of 3D parametric curves, based on a fixed complexity model, embedded in an iterative framework of control point insertion. The successive increase of degrees of freedom provides for a good precision while avoiding to over-parameterize the model. The curve is reconstructed by adapting the projections of a 3D NURBS snake to the observed curves in a multi-view setting. The sampling of the curve is adjusted as a function of the local visibility in the different views. The optimization of the curve is performed with respect to the control points using an gradient-based energy minimization method, whereas the insertion procedure relies on the computation of the distance from the curve to the image edges.

Classification of discontinuities

Control point

Curve fitting

Parametric equation

Visibility

10.1109/wisp.2007.4447556

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Citations (2)

Comportement électrochimique d'une électrode semiconductrice de Cdte-n en milieu non aqueux

Journal de Chimie Physique (1980)

F. Gaspard F. Mondon Fritz Muller

Dans la première partie de cette publication les différents processus susceptibles de donner lieu à un transfert de charge entre une électrode semiconductrice et une espèce électrochimiquement active en solution sont tout d'abord rappelés. L'étude expérimentale effectuée ensuite sur électrode polycristalline de CdTe de type n confirme en tout point la validité du modèle envisagé. Il est montré en particulier qu'il suffit de connaître la position des niveaux d'énergie d'une espèce redox donnée par rapport aux énergies des bandes du semiconducteur pour que le comportement électrochimique de l'espèce considérée puisse être entièrement prévu.

10.1051/jcp/1980770069

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Citations (1)

Architecture Générique de Stockage Multimedia Réparti avec Recherche et Indexation distribuées (Projet ITEA2 LINDO)

HAL (Le Centre pour la Communication Scientifique Directe) (2008)

F. Gaspard Olivier Pietquin Florence Sèdes Jean-François Seignole Jean-François Sulzer

Indexation

Source

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Porous n/sup +/-type sucon - polyaniline eleciroluminescent diode

International Conference on Science and Technology of Synthetic Metals (1994)

Y.F. Nicolau A. Bsiesy Frank Müller F. Gaspard

Summary form only given, as follows. Aniline is polymenzed inside the empty pores of porous n ⁺ -type Si (PS) films, on the inner surface of the PS, by repeated chemical bath deposition, from its dilute solution in a mixture of HCl - ethanol - water, using (NH ₄ )2S ₂ Q as oxidant. The autocatalytic heterogeneous polymerization of aniline allows the filling of the empty pores by the polymer. A convenient mean filling rate per step is 130 nm. The PANI-filled and covered PS hetemjunction behaves as a semiconductor diode. Electroluminescence (EL) is observed under a forward bias of several volts applying the positive polarity on a Au contact deposited on top of the PANI layer. The EL intensity is directly proportional to the forward current. The EL peak is like the PL peak of PS, indicating a common origin. The emeraldine pperties: (1) large band gap p ⁺ -type semiconductor, (2) weak absorbance for the green, yellow and orange light, and (3) stability of the conducting form in air, are well suited for making PS EL diodes. The detailed deposifich technology, electrical and spectmphotomtrical characterization of the diode will be presented.

10.1109/stsm.1994.836035

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