Partial open defects in modern Static Random Access Memory (SRAM) address decoders are one of the main causes of small delays; these are hard to detect and may result in escapes and reliability problems. In addition, Aging failures - such as Bias Temperature Instability (BTI)-may worsen the situation and accelerate the degradation (i.e. increase the delay) and cause sooner field failures. This paper investigates the impact of partial opens and BTI in SRAM address decoders first separately and thereafter in a combined manner. Simulation results show that BTI impact strongly depends on the selected worldline, transistor location and addressing scheme; and it cause up to 14.27% additional delay. In addition, they show that partial opens, which do not cause hard faults and allow memory operations to pass correctly, contribute up to 23.65% additional delay. Combining these failure mechanisms reveals that the degradation can strongly be worsened and accelerate wear-out; an additional delay of up to 31.20% can be caused. This indicates the importance of incorporating appropriate design-for-reliability/testability schemes in order to guarantee the required lifetime of the memory system.
Emerging memristor-based architectures are promising for data-intensive applications as these can enhance the computation efficiency, solve the data transfer bottleneck and at the same time deliver high energy efficiency using their normally-off/instant-on attributes. However, their storing devices are more susceptible to manufacturing defects compared to the traditional memory technologies because they are fabricated with new materials and require different manufacturing processes. Hence, in order to ensure correct functionalities for these technologies, it is necessary to have accurate fault modeling as well as proper test methodologies with high test coverage. In this paper, we propose technology specific cell-level defect modeling, accurate fault analysis and yield improvement solutions for memristor-based memory as well as Computation-In-Memory (CIM) architectures. Our overall contributions cover three abstraction levels, namely, device, architecture and system. First, we propose a device-aware test methodology in which we have introduced a key device-level characteristic to develop accurate defect model. Second, we demonstrate a yield analysis framework for memristor arrays considering reliability and permanent faults due to parametric variations and explore fault-tolerant solutions. Third, a lightweight on-line test and repair schemes is proposed for emerging CIM devices in machine learning applications.
This paper presents an approach for testing word-oriented multi-port memories. Fault models for such memories are given based on fault models for bit-oriented multi-port memories. A distinction between intra-word faults and inter-word faults as made. A systematic way of converting bit-oriented multi-port memory tests into word-oriented multi-port memory tests is presented.
In recent years, we are witnessing a trend toward in-memory computing for future generations of computers that differs from traditional von-Neumann architecture in which there is a clear distinction between computing and memory units. Considering that data movements between the central processing unit (CPU) and memory consume several orders of magnitude more energy compared to simple arithmetic operations in the CPU, in-memory computing will lead to huge energy savings as data no longer needs to be moved around between these units. In an initial step toward this goal, new non-volatile memory technologies, e.g., resistive RAM (ReRAM) and phase-change memory (PCM), are being explored. This has led to a large body of research that mainly focuses on the design of the memory array and its peripheral circuitry. In this article, we mainly focus on the tile architecture (comprising a memory array and peripheral circuitry) in which storage and compute operations are performed in the (analog) memory array and the results are produced in the (digital) periphery. Such an architecture is termed compute-in-memory-periphery (CIM-P). More precisely, we derive an abstract CIM-tile architecture and define its main building blocks. To bridge the gap between higher-level programming languages and the underlying (analog) circuit designs, an instruction-set architecture is defined that is intended to control and, in turn, sequence the operations within this CIM tile to perform higher-level more complex operations. Moreover, we define a procedure to pipeline the CIM-tile operations to further improve the performance. To simulate the tile and perform design space exploration considering different technologies and parameters, we introduce the fully parameterized first-of-its-kind CIM tile simulator and compiler. Furthermore, the compiler is technology-aware when scheduling the CIM-tile instructions. Finally, using the simulator, we perform several preliminary design space explorations regarding the three competing technologies, ReRAM, PCM, and STT-MRAM concerning CIM-tile parameters, e.g., the number of ADCs. Additionally, we investigate the effect of pipelining in relation to the clock speeds of the digital periphery assuming the three technologies. In the end, we demonstrate that our simulator is also capable of reporting energy consumption for each building block within the CIM tile after the execution of in-memory kernels considering the data-dependency on the energy consumption of the memory array. All the source codes are publicly available.
Emerging non-volatile resistive RAM (RRAM) device technology has shown great potential to cultivate not only high-density memory storage, but also energy-efficient computing units. However, the unique challenges related to RRAM fabrication process render the traditional memory testing solutions inefficient and inadequate for high product quality. This paper presents low-cost design-for-testability (DFT) solutions that augment the testing process and improve the fault coverage. A computation-in-memory (CIM) based DFT is realized to expedite the detection and diagnosis of faults by developing logic designs involving multi-row activation. A novel addressing scheme is introduced to facilitate the diagnosis of faults. Reconfigurable logic designs are developed to detect unique RRAM faults that offer features such as programmable reference generations, period, and voltage of operation. DFT implementations are validated on a post-layout extracted platform and testing sequences are introduced by incorporating the proposed DFTs. Results show that more than 2.3× speedup and better coverage are achieved with 6× area reduction when compared with state-of-the-art solutions.
Spiking Neural Networks (SNNs) are a strong candidate to be used in future machine learning applications. SNNs can obtain the same accuracy of complex deep learning networks, while only using a fraction of its power. As a result, an increase in popularity of SNNs is expected in the near future for cyber physical systems, especially in the Internet of Things (IoT) segment. However, SNNs work very different than conventional neural network architectures. Consequently, applying SNNs in the field might introduce new unexpected security vulnerabilities. This paper explores and identifies potential sources of information leakage for the Izhikevich neuron, which is a popular neuron model used in digital implementations of SNNs. Simulations and experiments on FPGA implementation of the spiking neurons show that timing and power can be used to infer important information of the internal functionality of the network. Additionally, the paper demonstrates that is feasible to perform a reverse engineering attack using both power and timing leakage.
Alternatives to CMOS logic circuit implementations are under research for future scaled electronics. Memristor crossbar-based logic circuit is one of the promising candidates to at least partially replace CMOS technology, which is facing many challenges such as reduced scalability, reliability, and performance gain. Memristor crossbar offers many advantages including scalability, high integration density, nonvolatility, etc. The state-of-the-art for memristor crossbar logic circuit design can only implement simple and small circuits. This paper proposes a mapping methodology of large Boolean logic circuits on memristor crossbar. Appropriate place-and-route schemes, to efficiently map the circuits on the crossbar, as well as several optimization schemes are also proposed. To illustrate the potential of the methodology, a multibit adder and other nine more complex benchmarks are studied; the delay, area and power consumption induced by both crossbar and its CMOS control part are evaluated.
Due to the decreasing dimensions of manufactured devices, the effect of bit line capacitive coupling on the behavior of faulty memory cells cannot be ignored. Neighboring cells influence the faulty behavior of defective cells through coupling. This paper analyzes and validates this behavior theoretically and through electrical simulations. The paper evaluates the impact of bit line coupling in SRAMs on cell faulty behavior and identifies necessary conditions to induce worst-case coupling effects. We present a test that guarantees detecting all single-cell static faults in the presence of capacitive coupling and worst-case neighborhood data for any possible open defect.
Although it is an integral part of any manufactured chip and a crucial step to guarantee the required quality, VLSI Test technology seems to become less attractive/interesting for the research community. Funding bodies are minimizing their funding in the area, scientists are moving to other hot topics, industry is not seriously supporting academia in the field, etc.
