L. Vasanelli

Innovation Engineering (Italy)

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A. Cola

Institute for Microelectronics and Microsystems

R. Rella

Institute for Microelectronics and Microsystems

Pietro Siciliano

Institute for Microelectronics and Microsystems

F. Quaranta

Institute for Microelectronics and Microsystems

A.M. Mancini

Innovation Engineering (Italy)

A. Quirini

Centro Sviluppo Materiali (Italy)

G. Leo

Policlinico di Modena

A. Valentini

Istituto Nazionale di Fisica Nucleare, Sezione di Bari

Aurora Rizzo

Istituto Nanoscienze

R. Murri

Università di Camerino

Cooperative Institutions

Istituto Nazionale di Fisica Nucleare, Sezione di Lecce

University of Salento

National Research Council

Istituto Nazionale per la Fisica della Materia

Innovation Engineering (Italy)

Istituto Nazionale di Fisica Nucleare

Institute for Microelectronics and Microsystems

University of Bari Aldo Moro

Istituto Nazionale di Fisica Nucleare, Sezione di Bari

University of Padua

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[Uses in nuclear medicine of detectors of cadmium telluride gamma radiation].

PubMed (1980)

Christian Bacci C. Furetta L. Vasanelli

Nuclear Radiation

Cadmium zinc telluride

Source

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Citations (0)

ZnO/CdTe Solar Cells Prepared by RF Sputtering

Springer eBooks (1987)

L. Vasanelli A. Valentini A. Quirini A.M. Mancini Aurora M. Losacco

Cadmium telluride photovoltaics

Deposition

10.1007/978-94-009-3817-5_113

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Citations (0)

Determination of deep-level parameters by a new analysis method of isothermal capacitance transients

Journal of Applied Physics (1991)

A. Cola Maria Grazia Lupo L. Vasanelli

A new method to analyze isothermal capacitance transients of Schottky barriers is proposed. Isothermal capacitance transients, recorded at different temperatures by an automatized measurement system, are analyzed by comparing the capacitance values at the same time but different temperatures. This method is similar to that used in the standard deep-level transient spectroscopy (DLTS), by inverting the role of time and temperature. The main parameters of the deep levels can be obtained as in the DLTS analysis. The analysis method is applied to Mo/GaAs Schottky barriers. Results have been compared with those obtained by standard DLTS analysis.

Isothermal process

Deep-level transient spectroscopy

Transient analysis

Transient (computer programming)

10.1063/1.348569

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Citations (4)

X-ray imaging using a pixel GaAs detector

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment (1995)

E. Bertolucci M.G. Bisogni U. Bottigli A. Cola M.E. Fantacci

X-ray detector

Charge sharing

Crystal (programming language)

Charge-coupled device

10.1016/0168-9002(95)00215-4

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Citations (9)

<title>Optical properties of Li-doped ZnO films</title>

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE (1991)

A. Valentini F. Quaranta L. Vasanelli R. Piccolo

The difficulty to achieve a refractive index matching between active substrate and active layer grown on, is one of the main problem in integrated optical devices based on gallium arsenide, because of its high refractive index value. One possible solution could be an active layer whose refractive index is variable during the grown. Zinc oxide is a very interesting material because of its electro-optic and acousto- optic properties. It has a low cost and can be prepared by a variety of techniques. In this paper deposition of lithium doped zinc oxide films by reactive sputtering has been investigated in order to study the dependence of optical properties on lithium content and deposition parameters. A ZnO:Li target was used. The film depositions were performed varying the oxygen content in sputtering gas. For comparison undoped ZnO films were also prepared. We have performed optical and electrical measurement on films relating the results to Li contents and O/Zn ratio obtained by nuclear reaction and Rutherford backscattering measurements respectively. The film analysis has shown that dopant concentration is mainly controlled by gas mixture. The optical properties are dependent on deposition conditions. Optical waveguides have been prepared and characterized. The results are presented and discussed.

Deposition

10.1117/12.47846

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Citations (1)

Gas mixture analysis by a micro-hotplates gas sensors array

Sensors and Microsystems (2000)

S. Capone Pietro Siciliano L. Vasanelli Nicolae Bârsan R. Kümer

Gas analysis

10.1142/9789812792013_0046

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Citations (1)

X-ray reflectivity analysis of thin TiN and TiOxNy films deposited by dual-ion-beam sputtering on (100)Si substrates

Thin Solid Films (1997)

M. Alvisi A. Rizzo L. Tapfer L. Vasanelli

Tin oxide

10.1016/s0040-6090(96)09208-5

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Citations (10)

Hall effect measurements in gas sensors based on nanosized os-doped sol-gel derived SnO/sub 2/ thin films

IEEE Sensors Journal (2003)

Mauro Epifani A. Forleo S. Capone F. Quaranta R. Rella

The influence of dopants on the electrical properties of gas sensitive layers used in semiconductor gas sensors has to be carefully understood for getting a deeper insight in the relationship between the sensor performance and its chemical composition. In this work, undoped and Os-doped SnO ₂ thin films have been prepared by the sol-gel process with an Os-Sn atomic ratio of 5%. The films have been characterized by resistivity and Hall effect measurements in a temperature range from 100 K to 500 K, both in air and in vacuum. The results have been investigated according to grain boundary scattering mechanism. We found that in air, the ambient oxygen species adsorbed on the film increase the height of the grain boundary barriers and the activation energy for the electrical conductivity increases in the doped film. In vacuum, the results showed that the height of the intergranular barrier is lower than the corresponding value in air. Both in air and in vacuum, the conductivity of the Os-doped sample is higher than the value in the undoped SnO ₂ sample. The same occurs for the Hall mobility and the carrier concentration. The experimental results have been used to explain the better methane sensitivity, at low temperature, of the Os-doped films as compared with the undoped ones.

Ultra-high vacuum

10.1109/jsen.2003.820322

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Citations (13)

Growth of epitaxial CdS films on CdTe substrates by chemical vapour deposition

Il Nuovo Cimento D (1988)

A.M. Mancini N. Lovergine C. De Blasi L. Vasanelli

Cadmium telluride photovoltaics

Deposition

Atmospheric temperature range

Limiting

10.1007/bf02450089