In this paper, we have proposed thermal and threshold voltage analysis of GaN MOSFET with AlGaN/GaN heterostructure for high power and high frequency applications. The extremely high 2 Dimensional Electron Gas density (2DEG) helps to carry more output current. Normally off behaviour of the device is obtained by the replacement of AlGaN barrier layer with gate insulator, which helps to reduce the power dissipation from the device. Initial 2 D simulations using Sentaurus TCAD shows significant improvements in the output current. Threshold voltage of the device is 0.932V and the value of OFF current obtained is 8.67 × 10 -7 A. Thermal analysis done on the device shows that the average temperature rise in the device is less as compared to the one with Si substrate.
An enhancement mode GaN MOSFET with AlGaN/GaN heterostructure for excessive frequency and excessive power applications is designed. The huge 2 dimensional electron gas density obtained at the AlGaN/GaN heterostructure helps to carry more output current, which needs for high output power generation. Normally off behaviour of the device is obtained by the replacement of AlGaN barrier layer with gate insulator, which helps to reduce the power dissipation from the device. Initial Two Dimensional simulations in Sentaurus TCAD showed that the threshold voltage of the device is nearly 0.6V and output current obtained is about 4.5×10 -2 A at 10 V gate supply.
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