S. Chandramohan

SRM Institute of Science and Technology

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Chang‐Hee Hong

University of Ulsan

R. Sathyamoorthy

Vellore Institute of Technology University

Beo Deul Ryu

Jeonbuk National University

Eun‐Kyung Suh

Jeonbuk National University

Sudhagar Pitchaimuthu

Heriot-Watt University

Tae Hoon Seo

Korea Institute of Industrial Technology

Hyun Kyu Kim

Korea Institute for Advanced Study

Ji Hye Kang

Ferdinand-Braun-Institut

Nam Han

Chungnam National University

Santhosh Durairaj

SRM Institute of Science and Technology

Cooperative Institutions

Jeonbuk National University

Government of the Republic of Korea

Korea Institute of Science and Technology

SRM Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Sungkyunkwan University

Chonbuk National University Hospital

Institute of Physics, Bhubaneshwar

Jeonju University

Seoul National University

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Growth Behavior, nucleation control and excellent optical properties of atomically thin WS2 thin films processed via Gas-phase chemical vapor deposition

Applied Surface Science (2021)

Nitin Babu Shinde Beo Deul Ryu Chang‐Hee Hong Bellarmine Francis S. Chandramohan

10.1016/j.apsusc.2021.150908

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Citations (9)

Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres

Materials Letters (2014)

Nam Han Young Jae Park Min Han Beo Deul Ryu Kang Bok Ko

Groove (engineering)

Threading (protein sequence)

10.1016/j.matlet.2014.02.091

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Citations (5)

Ion erosion induced nanostructured semiconductor surfaces

International Journal of Nanotechnology (2012)

V. Velmurugan T. Basu S.K. Garg J.K. Tripathi S. Chandramohan

We consider nanostructures formed on semiconductor surfaces of Si(100), InP(100) and GaAs using medium energy (50–100 keV) Ar+–ion beam sputtering. The issues of dependence of nanostructure formation on these semiconductor substrates on ion–energy, –fluence, –flux, angle of incidence, and crystallographic orientation are addressed. The threshold fluence for formation of nano–islands on Si(100) implanted with normally incident 50 keV Ar+–ions was found to be 2 × 1017 ions/cm². For InP(100) implanted with 100 keV Ar+–ions an increase in angle of incidence results in decrease of surface roughness. Surfaces of GaAs(100) and GaAs(111) implanted with normally incident 50 keV Ar+–ions show nanopits of density 3–4 × 109/cm². The existing theories are applied to explain the formation of observed surface nanostructures.

10.1504/ijnt.2012.049462

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Citations (1)

Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diode

Optics Letters (2013)

Hyun Kyu Kim Young Jae Park Ji Hye Kang Nam Han Min Han

In this Letter, a light-emitting diode (LED) with prism-shaped-air-ring microstructures (PSAMs) formed on flat sapphire substrate is demonstrated as an alternative design to face-up LEDs on patterned sapphire substrate (PSS) for enhanced light extraction efficiency. In this LED design, the emitted photons can be deflected to the top of the chip for its effective extraction, contrary to the PSS-LED wherein photons are guided to sapphire and get absorbed by packaging materials. The PSAM-LED showed an enhancement in the radiometric power as high as 10% with a low far-field angle of 129° over that of a PSS-LED under an injection current of 20 mA.

Incandescent light bulb

Prism

10.1364/ol.38.001491

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Citations (2)

Optical properties of swift ion beam irradiated CdTe thin films

Thin Solid Films (2007)

S. Chandramohan R. Sathyamoorthy Sudhagar Pitchaimuthu D. Kanjilal D. Kabiraj

Swift heavy ion

10.1016/j.tsf.2007.07.057

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Citations (28)

WSN Using Collective Scheme of Energy Efﬁcient Grouping and Evidence Retrieval

DergiPark (Istanbul University) (2017)

Shekhar Kumar S. Chandramohan

The two-layer network structure has been widely adopted in wireless sensor networks (WSNs) for managing sensor nodes. In such a structure, the low layer nodes communicate with their cluster head, followed by the cluster-head nodes communicating with the base station operating in either a one hop or a multi-hop manner. The main focus of node-clustering algorithms is minimizing energy consumption due to strictly limited resources in WSNs. Also, WSNs are data intensive networks with the capability of providing users with accurate data. Unfortunately, data missing is common in WSNs. In this paper, we propose a novel joint design of sensor nodes clustering and data recovery, where the WSNs is organized in a two-layer manner with our developed clustering algorithm, and then the missing data is recovered based on this two-layer structure. Furthermore, in the proposed clustering algorithm, we take both the energy-efﬁciency and data forecasting accuracy into consideration and investigate the tradeoff between them. This is based on the key observation that the high energy-efﬁciency of the network can be achieved by reducing the distances among the nodes in a cluster, while the accuracy of the forecasting results can be improved by increasing the correlation of the data stream among the nodes in a cluster. Simulation results demonstrate that our joint design outperforms the existing algorithms in terms of energy consumption and forecasting accuracy.

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Minimization of wafer bowing in GaN-based vertical light-emitting diodes by selective area growth using metal-organic chemical vapor deposition

Journal of Crystal Growth (2010)

Jae Hyoung Ryu S. Chandramohan Hee Yun Kim Hyun Kyu Kim Ji Hye Kang

Bowing

10.1016/j.jcrysgro.2010.10.104

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Citations (6)

Boron nitride nanotubes as a heat sinking and stress-relaxation layer for high performance light-emitting diodes

Nanoscale (2017)

Tae Hoon Seo Gun Hee Lee Ah Hyun Park Hyunjin Cho Junhee Kim

High-density threading dislocations, the presence of biaxial compressive strain, and heat generation are the major limitations obstructing the performance and reliability of light emitting diodes (LEDs). Herein, we demonstrate a facile epitaxial lateral overgrowth (ELOG) method by incorporating boron nitride nanotubes (BNNTs) on a sapphire substrate by spray coating to resolve the above issues. Atomic force microscopy, X-ray diffraction, micro-Raman, and photoluminescence measurements confirmed the growth of a high quality GaN epilayer on the BNNT-coated sapphire substrate with reduced threading dislocations and compressive strain owing to the ELOG process. GaN LEDs fabricated using this approach showed a significant enhancement in the internal quantum efficiency and electroluminescence intensity compared to conventional LEDs grown on sapphire. Moreover, reduced efficiency droop and surface temperature at high injection currents were achieved due to the excellent thermal stability and conductivity of BNNTs. Based on our findings we infer that the BNNTs would be a promising material for high power devices vulnerable to self-heating problems.

Stress relaxation

10.1039/c7nr04508e

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Citations (9)

Self-Assembled Periodic Silica Nanosphere Arrays on Wet-Etched Patterned Sapphire Substrate for a High-Light-Extraction-Efficiency Light-Emitting Diode

IEEE Electron Device Letters (2011)

Nam Han Hyung-Gu Kim Hee‐Yun Kim Jihye Kang Beo-Deul Ryu

We have developed a periodical self-assembled method of patterning the sapphire substrate with silica nanospheres for light-emitting diode (LED) applications. Using this method, silica nanospheres were directed to self-assemble in a periodic fashion on a wet-etched patterned sapphire substrate (WPSS). Moreover, we fabricated an InGaN/GaN-based LED on the silica-nanosphere-assembled WPSS. The light output power of the resultant LED was about 2.23 and 1.7 times higher than that of the LEDs grown on planar sapphire and WPSS, respectively. Moreover, the light extraction efficiency of the silica-nanosphere-assembled WPSS LED was 37% higher than that of conventional LED.

10.1109/led.2010.2103922

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Citations (9)

Maximum Cost Saving Approach for Optimal Capacitor Placement in Radial Distribution Systems using Modified ABC Algorithm

International Journal on Electrical Engineering and Informatics (2015)

N Gnanasekaran S. Chandramohan T. D. Sudhakar P .Sathish Kumar

This paper proposes an efficient methodology for optimal location and sizing of static shunt capacitors in radial distribution systems to reduce real power loss, improve voltage profile and to maximize total cost saving.The solution methodology has two parts: In part one, the buses to be compensated is identified using loss sensitivity factors.In the second part, modified artificial bee colony algorithm is used to select the optimal size of capacitors to be placed at the candidate buses.In addition the number of candidate buses is selected by searching for maximum cost saving.The results of proposed approach have been presented and compared with previous methods reported in the literature using four test cases.The presented results indicate the efficiency and quality of solution.

10.15676/ijeei.2015.7.4.10

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Citations (10)