Suchinder K. Sharma

Helmholtz Institute Freiberg for Resource Technology

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Bruno Viana

Université Paris Sciences et Lettres

Didier Gourier

Chimie ParisTech

M.M. Malik

Maulana Azad National Institute of Technology

Jan Beyer

TU Bergakademie Freiberg

Richard Gloaguen

Helmholtz Institute Freiberg for Resource Technology

Johannes Heitmann

TU Bergakademie Freiberg

M.S. Qureshi

Infineon Technologies (Germany)

Shreyas S. Pitale

Bhabha Atomic Research Centre

Rama Dubey

Defence Research Laboratory

Aurélie Bessière

École Nationale Supérieure de Chimie de Montpellier

Cooperative Institutions

Centre National de la Recherche Scientifique

Chimie ParisTech

TU Bergakademie Freiberg

Université Paris Sciences et Lettres

Post Graduate Institute of Medical Education and Research

Helmholtz-Zentrum Dresden-Rossendorf

Institut de Recherche de Chimie Paris

Sorbonne Université

Délégation Paris 6

Maulana Azad National Institute of Technology

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Origin of the visible light induced persistent luminescence of Cr3+-doped zinc gallate

Journal of Physics and Chemistry of Solids (2014)

Didier Gourier Aurélie Bessière Suchinder K. Sharma Laurent Binet Bruno Viana

Persistent luminescence

Photostimulated luminescence

Photoluminescence excitation

Visible spectrum

Zinc sulfide

10.1016/j.jpcs.2014.03.005

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Citations (143)

Photoluminescence Properties and Fabrication of Red-Emitting LEDs based on Ca₉Eu(VO₄)₇ Phosphor

ECS Journal of Solid State Science and Technology (2019)

Suchinder K. Sharma Tobias Tingberg I. Carrasco Marco Bettinelli Dan Kuylenstierna

We study the photoluminescence properties of the red-emitting phosphor Ca9Eu(VO4)7 and establish a strong red emission centered at 613 nm under excitation at 395 nm (near ultra violet light, near-UV light) due to the intra-configurational 5D0 → 7F2 transition within the 4f6 configuration of the Eu3+ ions. The intensity of the emitted light decreases with increasing temperature and at T = 470 K about 50% of the intensity of the emitted light at room temperature is lost. Five different red-LED prototypes were constructed by applying a mixture of Ca9Eu(VO4)7 phosphor and silicone gel on the headers of near-UV LED chips. The prototypes showed a color output from violet for the lowest phosphor concentration (133 g phosphor /l silicone gel), reaching an almost pure red-light output for the highest phosphor concentration (670 g phosphor /l silicone gel). The luminous efficiency of optical radiation (LER) was found to decrease slightly with increasing applied current. For the highest phosphor concentration, the LER decreases from 238 lmW−1 for 1 mA current supply to 235 lmW−1 for 18 mA current supply. The external quantum efficiency decreased from 7.33% for the lowest phosphor containing LED prototype to 4.13% for the highest one.

Quantum Efficiency

10.1149/2.0052001jss

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Citations (13)

Influence of Ce, Pr, and Gd Doping on Optical and Electrochemical Energy Storage Capabilities of Ca_0.15Zr_0.85O_1.85

The Journal of Physical Chemistry C (2025)

Ankit Sharma Preeti Pathania Shamima Hussain Suchinder K. Sharma

The quest to find stable energy materials is ongoing. In this study, we investigate the influence of lanthanoid doping, specifically, Ce, Gd, and Pr, on the storage of optical and electrochemical energy at room temperature. The samples were prepared using the sol–gel method at room temperature, followed by annealing at 550 °C for 2 h to enhance crystallinity and phase purity. All samples crystallize in the rare Ca0.15Zr0.85O1.85 phase with a cubic crystal structure. The undoped sample exhibits a prominent photoluminescence emission at 345 nm (UV-A region). In contrast, the lanthanoid-doped samples show significant emissions at 310 and 355 nm (UV-A and UV-B regions). Lifetime studies were performed to understand the kinetics of charges in their excited state. All samples display strong persistent luminescence (PersL) in the UV region for at least 15 min due to the trapping, detrapping, and retrapping of charges at room temperature. Additionally, room temperature-induced tunneling is observed in the Pr-doped sample, which also demonstrates a strong redox peak at 0.25 V during electrochemical measurements. All samples exhibit a quasi-rectangular shape in the potential range of −1.0 to 1.0 V across different scan rates. Among the doped samples, the Pr-doped sample shows the highest conductivity, while the Ce-doped sample exhibits the highest resistance. Overall, we have successfully incorporated UV-B PersL into these samples, and with Pr doping, the conductivity of the material is improved, suggesting the potential use of this material for multifunctional energy applications.

Optical storage

10.1021/acs.jpcc.4c08202

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TL and PL studies on defect-assisted green luminescence from doped strontium sulfide phosphor

Journal of Luminescence (2008)

Shreyas S. Pitale Suchinder K. Sharma Rama Dubey M.S. Qureshi M.M. Malik

Persistent luminescence

10.1016/j.jlumin.2008.03.002

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Citations (21)

Spectral and kinetic characterization of orange-red emitting Sr3Al2O6:Eu3+/Sm3+phosphor

Journal of Alloys and Compounds (2009)

Suchinder K. Sharma Shreyas S. Pitale M.M. Malik M.S. Qureshi Rama Dubey

Nanocrystalline material

10.1016/j.jallcom.2009.04.058

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Citations (60)

Library of UV-Visible Absorption Spectra of Rare Earth Orthophosphates, LnPO4 (Ln = La-Lu, except Pm)

Crystals (2020)

Suchinder K. Sharma Thomas Behm T. Köhler Jan Beyer Richard Gloaguen

In recent times, rare earth orthophosphates ( L n PO 4 ) have shown great potential as efficient optical materials. They possess either m o n a z i t e or x e n o t i m e –type structures. These light or heavy rare earth bearing orthophosphates also exhibit an extraordinary stability over geological time scale in nature, ∼10 9 years. In the present contribution, we measure, collect, and present a library of absorption spectra of all the L n PO 4 hosts ( L n = La–Lu, except Pm) using their single crystal samples, to conclude that the observed spectral features for wavelengths longer than 200 nm were attributable to either Ln- or defect related centers, which corroborate the fact that they have a bandgap higher than 8.0 eV. The absorption band around wavelength, 275 nm, corresponds to defect absorption related to PO 3 centers and/or oxygen vacancies. The hosts can potentially be used to study and interpret unperturbed rare earth emissions due to absence of host related absorption above 300 nm. The information presented herein is expected to serve as a library of absorption spectra for geologists, physicists, material scientists, and chemists working in the field of rare earths.

Absorption band

Crystal (programming language)

10.3390/cryst10070593

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Citations (11)

Gd Doping-Induced Luminescence Red-Shift in the CaZrO₃ Perovskite for Optoelectronics

ACS Applied Optical Materials (2023)

Jinu James Ankit Sharma Shamima Hussain Suchinder K. Sharma

Herein, we present results on the structural and optical properties of an undoped and a series of Gd-doped perovskites, CaZrO3, for a possible application in optoelectronics. We prepared different samples using the solid-state synthesis method. The powder X-ray diffraction pattern confirmed the formation of the host lattice and also suggested that the Gd ions replaced Ca ions in the host lattice. The UV–vis reflectance spectra suggested that the host band gap was 4.96 eV at room temperature. A shift in the photoluminescence emission was observed from 370 nm (emission for an undoped sample) to 465 nm (emission for a Gd-doped sample). The red shift has been assigned to the presence of defect distribution close to the conduction band in the host lattice and also to the internal energy-transfer process between Gd and defect levels. The same was confirmed by time-correlated photon counting decay measurements. The sample with a high Gd concentration (Ca0.96Gd0.04ZrO3) gives photoluminescence emission with the highest relative intensity, with approximately a three-fold intensity increase as compared to an undoped sample. We understand the mechanism of charge recombination via a vacuum-referred binding energy diagram to determine the energy transfer process responsible for an increase in emission intensity and concentration quenching for samples containing a higher concentration of doped Gd ions. The decay time in ns-regime and emission between 350 and 650 nm makes the present host–dopant combination a promising option for optoelectronics.

10.1021/acsaom.3c00342

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Citations (2)

Long term in vivo imaging with Cr3+ doped spinel nanoparticles exhibiting persistent luminescence

Journal of Luminescence (2015)

Bruno Viana Suchinder K. Sharma Didier Gourier Thomas Maldiney Eliott Teston

Persistent luminescence

Cathodoluminescence

10.1016/j.jlumin.2015.09.014

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Citations (124)

Dynamics of Charges in Superlong Blacklight-Emitting CaB₂O₄:Ce³⁺ Persistent Phosphor

The Journal of Physical Chemistry (2019)

Suchinder K. Sharma Marco Bettinelli I. Carrasco Jan Beyer Richard Gloaguen

The optical and persistent luminescence properties of CaB₂O₄:Ce³⁺ phosphor are presented. The optical emission for excitation in the 250–340 nm wavelength region is dominated by two bands at 365 and 460 nm. Lifetime measurements suggested that the 365 nm emission band is due to interconfigurational Ce³⁺ 5d → 4f transitions. Upon excitation with a 254 nm UV lamp, a superlong persistent luminescence in the UVA1 region (340–400 nm, blacklight) was observed, lasting for at least 15 h, and with excellent reproducibility, which is perfectly suitable for phototherapy application. The initial-rise method was applied on the thermoluminescence glow curves to determine the trap distribution and trap depth. The results suggest that one distinct trap, with an activation energy of ∼0.52 eV, was solely responsible for the persistent luminescence in the CaB₂O₄:Ce³⁺ phosphor. The other traps had a quasi-continuous distribution, with activation energies between 0.56 and 1.15 eV. The proposed persistent luminescence and the thermoluminescence mechanisms are elucidated using experimental parameters obtained from the optical and thermoluminescence results and the theoretically calculated electronic structure of the Ce³⁺ ion in CaB₂O₄. The lowest Ce³⁺ 5d₁ level was found to be ∼0.97 eV below the conduction band, and the persistent luminescence/thermoluminescence emission was dominated by the radiative transitions between Ce³⁺ energy levels, 5d → ²F₅/₂,₇/₂.

Persistent luminescence

Optically stimulated luminescence

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Delayed tunneling of charges to deep traps in ZnO impurity containing Cr³⁺ doped Zn₂TiO₄ inverse spinel

Physical Chemistry Chemical Physics (2024)

Ankit Sharma Suchinder K. Sharma

In this investigation, we have examined how different excitation wavelengths affect charge storage in Cr doped Zn 2 TiO 4 .

Zinc compounds

10.1039/d4cp01469c

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Citations (1)