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Amporn Poyai

National Electronics and Computer Technology Center

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Charndet Hruanun

National Science and Technology Development Agency

Toempong Phetchakul

King Mongkut's Institute of Technology Ladkrabang

Wutthinan Jeamsaksiri

National Electronics and Computer Technology Center

Cor Claeys

KU Leuven

Eddy Simoen

IMEC

Win Bunjongpru

National Science and Technology Development Agency

Surasak Niemcharoen

King Mongkut's Institute of Technology Ladkrabang

Supanit Porntheeraphat

National Electronics and Computer Technology Center

Nithi Atthi

National Science and Technology Development Agency

J. Nukeaw

King Mongkut's Institute of Technology Ladkrabang

Cooperative Institutions

King Mongkut's Institute of Technology Ladkrabang

National Electronics and Computer Technology Center

National Science and Technology Development Agency

Mahidol University

IMEC

KU Leuven

Thailand Center of Excellence in Physics

National Institute of Technology, Kumamoto College

National Nanotechnology Center

King Mongkut's University of Technology Thonburi

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Magnetotransistor Based on the Carrier Recombination—Deflection Effect

IEEE Sensors Journal (2010)

Chana Leepattarapongpan Toempong Phetchakul Naritchapan Penpondee Putapon Pengpad Ekalak Chaowicharat

This paper presents the three-terminal magnetotransistor based on the carrier recombination-deflection effect. Three-terminal magnetotransistor can detect vertical and lateral magnetic field direction. The structure of magnetotransistor consists of one emitter, one collector and one base contact. The devices can detect magnetic field by relying on the difference between base current and collector current (¿I _CB ). The result from experiments closely matched the simulated 3-D modeling with base width of 20 ¿m at substrate thickness of 600 ¿m . From the experiment, the magnetotransistor had the highest sensitivity of 10.25%/T when emitter current was at 10 mA. This research on the three-terminal magnetotransistor can achieve magnetic sensors with small size, high performance and wide range of applications.

10.1109/jsen.2009.2033812

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Citations (14)

An Effect of Viscosity of Coating Materials on Silicon Micro-Patterning Arrays for Superhydrophobic Surface

Advanced materials research (2010)

Nithi Atthi On-Uma Nimittrakoolchai Sitthisuntorn Supothina Jakrapong Supadech Wutthinan Jeamsaksiri

Two different viscous coating materials, which are Polydimethylsiloxane (PDMS) mixed with 10%wt of Dicumylperoxide (DCP), and Semifluorinate Silane (SFS), were applied to silicon micro-asperity. The cosine’s Young and viscosity of those coating materials are -0.3584,-0.3496 and 3.176x10-3, 1.339 x10-3 Pas, respectively. The rough surfaces with nine asperity shapes were studied. The results shown that, pillar shape has an effect on water contact angle (WCA): Stripe asperity cannot make the average WCA greater than 150. When consider the pillar asperity, the WCA falls between 152 and 157, which exhibits a superhydrophobic surface property. However, actual WCA of the micro-asperity coated with PDMS+10%wt of DCP is lower than that coated with SFS around 1 to 7. High viscous material makes the asperity size bigger than the design and decreases the WCA: the low viscous material is more suitable for coating on the asperities.

Asperity (geotechnical engineering)

Polydimethylsiloxane

Pillar

10.4028/www.scientific.net/amr.93-94.447

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Contributing parameters for magnetoresistance effect of the new design on Hall plate structure

Toempong Phetchakul P. Taisettavatkul Wittawat Yamwong Amporn Poyai

This paper presents the parameters which contribute magnetoresistance effect of the new design on Hall plate structure when it is compared with series resistance structure. The new design is designed with rectangular aluminum ring surrounding on Hall plate. It creates zero Hall voltage area which the carriers move and deflect freely. The new and classical designs have percentage of magnetoresistance effect about 20% at doping concentration 2 × 10 ¹⁵ cm ^-3 , temperature 300 K at magnetic field 3 Tesla when classical one has metal space about 10 μm. The new design one is easier design than the classical series resistance and has no effect of metal space. Parameters which are used in this experiment are silicon and gallium arsenide at doping concentration 2 × 10 ¹⁴ , 2 × 10 ¹⁵ and 2 × 10 ¹⁶ at temperature 200, 250 and 300 K with Sentaurus TCAD program for simulation. The new design has the percentage of magnetoresistance effect much higher up to 906% over than the classical series resistance when it is designed with high mobility material, low doping concentration and low temperature.

10.1109/ecticon.2013.6559502

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High-energy boron-implantation and proton-irradiation effects in diodes with shallow trench isolation

Amporn Poyai Eddy Simoen Cor Claeys K. Hayama K. Kobayashi

Shallow trench isolation

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Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well

Amporn Poyai Eddy Simoen Cor Claeys R. Rooyackers G. Badenes

Leakage (economics)

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Silicon substrate effects on the leakage current of advanced p-n junction diodes

Amporn Poyai Eddy Simoen Cor Claeys Adam Czerwiński

Leakage (economics)

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Current transients in almost-ideal Czochralski silicon p–n junction diodes

Applied Physics Letters (1999)

Amporn Poyai E. Simoen Cor Claeys

The nature of the reverse current transients in large-area nearly ideal p–n junction diodes fabricated on Czochralski silicon substrates is investigated. It is shown that they can be generated by an electrical or optical excitation pulse. A typical nonexponential behavior with time is observed. The best fit is found for a power-law function. The impact of the reverse bias and the temperature on the prefactor and on the exponent will be presented. From the observations, it is concluded that the capture of electrons is a necessary step for the generation of the transients. A discussion of the possible nature of the underlying defects is given, and the implications for practical current–voltage characterization will be discussed.

p–n junction

Exponent

Reverse bias

10.1063/1.125345

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Activation energy analysis as a tool for extraction and investigation of p–n junction leakage current components

Journal of Applied Physics (2003)

A. Czerwiński E. Simoen Amporn Poyai C. Claeys

The origin of p–n junction reverse current is investigated by a method based on the analysis of the leakage current activation energy. Its main advantages lie in the possibility to distinguish multiple reverse-bias dependent leakage components and determine their mechanisms, which can be different than the Shockley–Read–Hall or field-enhanced generation mechanisms. This is illustrated for state-of-the-art silicided shallow junctions, exhibiting a local Schottky effect, due to small-area silicide penetrations. An estimate of the area of the Schottky (or Shannon) contacts follows from the analysis. The method may be used for various semiconductor materials and leakage current origins.

Leakage (economics)

Reverse bias

Metal–semiconductor junction

Schottky effect

p–n junction

10.1063/1.1582553

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Citations (41)

A silicon nitride ISFET based immunosensor for Ag85B detection of tuberculosis

The Analyst (2016)

Pawasuth Saengdee Woraphan Chaisriratanakul Win Bunjongpru Witsaroot Sripumkhai Awirut Srisuwan

An ISFET-based sensor was developed for Ag85B detection by immobilization of anti-Ag85B. The precision (CV%) and accuracy of this sensor were 9.73–10.99% and 95.29%, respectively.

ISFET

10.1039/c6an00568c

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Citations (31)

P-N junction diagnostics of the electrical epi-layer quality: a feasibility study

Eddy Simoen Amporn Poyai Cor Claeys Adam Czerwiński

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