Paul Ronsheim

IBM (United States)

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M. Gribelyuk

Western Digital (United States)

A. Domenicucci

IBM (United States)

Michael Hatzistergos

GlobalFoundries (United States)

Oleg Gluschenkov

IBM (United States)

P. Flaitz

IBM (United States)

O. Dokumaci

Kahramanmaraş Sütçü İmam University

Marinus Hopstaken

IBM Research - Thomas J. Watson Research Center

J. S. McMurray

IBM (United States)

J. A. Ott

IBM Research - Thomas J. Watson Research Center

M. J. Tejwani

IBM (United States)

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IBM (United States)

177

IBM Research - Thomas J. Watson Research Center

GlobalFoundries (United States)

Semiconductor Research Corporation

Advanced Micro Devices (Canada)

Stanford University

University at Albany, State University of New York

Applied Materials (United States)

Massachusetts Institute of Technology

University of Wisconsin–Madison

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Electron Holography as Characterization Tool for 2-D Analysis of p-n Junctions

Meeting abstracts/Meeting abstracts (Electrochemical Society. CD-ROM) (2007)

M. Gribelyuk A. Domenicucci Paul Ronsheim Jeffrey McMurray Oleg Gluschenkov

Abstract not Available.

Characterization

Electron holography

10.1149/ma2007-02/19/1104

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Citations (0)

Comment on ‘‘Novel diffusion phenomenon of dopants in silicon at low temperatures’’

Physical Review Letters (1993)

Paul Ronsheim M. J. Tejwani

10.1103/physrevlett.71.947

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Citations (3)

Study of pre-equilibrium sputter rates for ultrashallow depth profiling with secondary ion mass spectrometry

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (2000)

Paul Ronsheim R. J. Murphy

Sputter rates for sub-keV primary beam energies are investigated with atomic force microscopy measurements of crater step heights. Using a 800 eV O2+ sputtering beam at an incidence angle of 50° with oxygen flooding, the surface swells as the implanted oxygen forms an altered layer. After a fluence of 1E17 O/cm2, the sputter rate reaches equilibrium. Characteristic parameters such as the depth scale offset, zd0, and the apparent initial silicon surface zSi0, are extracted from the data (0.6 and −1.3 nm, respectively), and the magnitude of the profile shift is discussed in terms of the final profile accuracy.

10.1116/1.591220

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Citations (4)

Effect of matrix stopping power on sputter depth profile broadening

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena (1994)

Paul Ronsheim M. J. Tejwani

Collision cascade mixing in the sputter depth profiling process broadens the measured width of abrupt dopant structures by displacing the target atoms, predominantly through collisions with the disturbed matrix atoms prior to sputter removal. Sputtering theory predicts a profile broadening dependence on the nuclear stopping power of the projectile in the target matrix, but this is not supported by experimental data. In this experiment, abrupt boron profiles were measured in a matrix of silicon or germanium, at a range of energies from 2.5 to 10.5 keV. The higher mass matrix gives access to high stopping powers, particularly for Xe+ projectiles. As with the projectile mass experiments, this work does not support the predicted change in decay length with the range of the projectile. The data indicate the decay length dependence on projectile energy alone is due to dopant displacements by primary recoils as well as the collision cascade mixing.

Collision cascade

Stopping power

10.1116/1.587149

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Citations (3)

Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs

ECS Transactions (2010)

Marinus Hopstaken Dirk Pfeiffer Michael Gordon E. Kiewra Yanning Sun

We investigate the sputtering behavior and depth resolution upon low energy ion irradiation during Secondary Ion Mass Spectrometry (SIMS) depth profiling of GaAs. We present a systematic and quantitative study of the impact of ion species, primary ion impact energy, and incident angle on the evolution of depth resolution, using a well-defined InGaAs/GaAs multilayer structure with highly abrupt hetero-interfaces. We demonstrate that for low energy O2+ ion beam irradiation, SIMS depth resolution becomes progressively degraded by (transient) incorporation of high surface O-concentration levels in the altered layer, leading to detrimental ion-beam induced formation of topography. In case of low energy oblique Cs+ ion beam irradiation, sputtering behavior of GaAs is well-behaved with no significant transient yield changes and a constant depth resolution. This enables SIMS depth profiling of sharp hetero-epitaxial III-V compound semiconductor structures and shallow dopant profiles with sufficiently good depth resolution with good detection efficiency.

10.1149/1.3367952

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Citations (1)

Dopant interactions during the diffusion of arsenic and boron in opposite directions in polycrystalline/monocrystalline silicon structures

Applied Physics Letters (1995)

Joachim N. Burghartz C. Stanis Paul Ronsheim

Experimental results of the effects of the arsenic doping concentration on the boron outdiffusion in n-polycrystalline/p-monocrystalline silicon structures are presented. The boron diffusivity is only 30 times larger in polycrystalline silicon than in monocrystalline silicon if the arsenic doping is high enough to cause enhanced grain growth. The diffusivity increase is about 130 if the polycrystalline silicon has small grains due to low arsenic doping. The boron loss from the base region of an advanced bipolar transistor doping profile by outdiffusion into the emitter polycrystalline silicon is of the order of 20% and needs to be considered for accurate device modeling.

Polycrystalline silicon

Nanocrystalline silicon

Strained silicon

10.1063/1.115147

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Citations (1)

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films (2008)

Michael Belyansky M. A. Chace Oleg Gluschenkov J.J. Kempisty N. Klymko

Various methods of generating high stress in thin plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) films are reported. Besides the mainstream variation of plasma power and other process parameters, novel techniques such as creation of high density layers in multilayer PECVD structures or exposure of SiN films to ultraviolet radiation are shown to increase intrinsic film stress. Thin PECVD SiN films have been analyzed by a variety of analytical techniques including Fourier transform infrared spectroscopy, x-ray reflectivity (XRR), time of flight secondary ion mass spectrometry, and transmission electron microscopy to collect data on bonding, density, chemical composition, and film thickness. The level of bonded hydrogen as well as film density has been found to correlate with film stress. Creation of multilayer structures and high density layers help to build up more stress compared to a standard single layer film deposition. Both the density and number of layers in a film, characterized by XRR, affect the stress. Higher density layers affect diffusion profiles and show impurity oscillations corresponding to a multilayer film structure. Ultraviolet cure allows the film to achieve higher level of tensile stress at relatively low temperatures (400–500°C), comparable to the result of film high temperature annealing.

X-ray reflectivity

10.1116/1.2906259

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Citations (31)

Indium channel implant for improved short-channel behavior of submicrometer NMOSFETs

IEEE Electron Device Letters (1993)

G. Shahidi B. Davari T. Bucelot Paul Ronsheim P. Coane

Indium has been used as an alternative channel implant in submicrometer-channel Si MOSFETs in order to obtain highly nonuniform channel doping. Superior device characteristics have been obtained down to 0.17- mu m channel length. The device characteristics have been compared to those of uniform boron-implanted short-channel MOSFETs used in a 0.25- mu m CMOS technology. Results indicate that NMOSFETs with nonuniform channel doping obtained with indium have superior short-channel effect (SCE) when compared to NMOSFETs with uniformly (boron) doped channel.< >

10.1109/55.225595

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Citations (71)

The Dependence of ETCH Pit Density on the Interfacial Oxygen Levels in Thin Silicon Layers Grown by Ultra High Vacuum Chemical Vapor Deposition

MRS Proceedings (1992)

M. J. Tejwani Paul Ronsheim

Hydrofluoric acid

Carbon fibers

10.1557/proc-259-467

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Citations (4)

ChemInform Abstract: ULSI Quality Silicon Epitaxial Growth at 850 °C.

ChemInform (1990)

V. J. Silvestri Karen Nummy Paul Ronsheim R. Bendernagel D. R. Kerr

Abstract ULSI (ultra large scale integration) quality silicon epitaxial films are grown in a commercially available cylindrical epi reactor at temp. as low as 850 °C and pressures as low as 10 torr using Si 2 H 6 as silicon source.

Torr

10.1002/chin.199037341

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Citations (0)