author-photo

Jang-Eun Heo

3

Papers

28

Citations

Citation Trend

Filter By

Papers (3) Sort By

Journal Conference Others

Highly reliable 0.15 μm/14 F2 cell ferroelectric random access memory capacitor using SrRuO3 buffer layer

2006 Japanese Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (13)
Plasma-assisted dry etching of ferroelectric capacitor modules and application to a 32M ferroelectric random access memory devices with submicron feature sizes

2002 Japanese Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (4)
Integration of ferroelectric random access memory devices with Ir/IrO2/Pb(ZrxTi1-x)O3/Ir capacitors formed by metalorganic chemical vapor deposition-grown Pb(ZrxTi1-x)O3

2002 Japanese Journal of Applied Physics
Show All
- Source
- Cite
- Save
Citations (11)