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Pascal Besson

10

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7

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First demonstration of low temperature $(\leq 500^{\circ}\mathrm{C})$ CMOS devices featuring functional RO and SRAM bitcells toward 3D VLSI integration

2020 VLSIT | Symposium on VLSI Technology
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L’espace public, au-delà du fantôme de la mixité

2018
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Integration of Low Temperature 480℃ SiOCN as Offset Spacer in view of 3D Sequential Integration

2016
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ECS Transactions - 10th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing: Preface

2007
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Direct metal gate 40nm planar double gate CMOS by bonding for multipurpose applications

2005 Japanese Journal of Applied Physics
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A method for wet cleaning of a surface, especially of a material such as silicon germanium

2004
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材料表面の湿式洗浄方法及びこれを用いた電子、光学、または光電子デバイスの作製プロセス

2004
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cleaning wet process of a surface including a germanium silicon type material.

2003
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