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S. Huang-Lu

3

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21

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Channel soft breakdown enhanced excess low-frequency noise in ultra-thin gate oxide PD analog SOI devices [MOSFETs]

2005 IRPS | International Reliability Physics Symposium
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Symmetrical 45nm PMOS on [110] substrate with excellent S/D extension distribution and mobility enhancement

2004 VLSIT | Symposium on VLSI Technology
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Hot carrier degradation in novel strained-Si nMOSFETs

2004 IRPS | International Reliability Physics Symposium
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