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Satish D. Athavale

IBM

5

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193

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Depot de materiau a constante dielectrique elevee pour obtention d'une capacitance elevee

2001
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Leicht entfernbare Hartmaskenschicht für die Herstellung einer Halbleitervorrichtung

2001
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Three dimensional (BA, SR) TIO3 stack capacitors for dram application

2001 Integrated Ferroelectrics
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(Ba,Sr)TiO 3 dielectrics for future stacked- capacitor DRAM

1999 Ibm Journal of Research and Development
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