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D. Nagalingam
D. Nagalingam
GlobalFoundries
Electronic engineering
Materials science
Semiconductor device fabrication
Leakage (electronics)
Engineering
6
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11
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Cross Sectional Passive Voltage Contrast Approach for Gate Oxide Breakdown Defect Isolation and Visualization for TEM Analysis
2020
S. L. Ting
Pik Kee Tan
Y. L. Pan
H. H. W. Thoungh
S.Y. Thum
F. Rivai
P. T. Ng
S. J. Moon
D. Nagalingam
T.T. Yu
S.P. Neo
C. Q. Chen
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Sample Preparation in Recover Physical Defects on MIM Related failure for Different Devices In Wafer Fabrication
2019
IPFA | International Symposium on the Physical and Failure Analysis of Integrated Circuits
H. P. Ng
N.Y. Xu
D. Nagalingam
Francis Rivai
Angela Teo
Pik Kee Tan
C. Q. Chen
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Static fault localization of subtle metallization defects using near infrared photon emission microscopy
2017
Microelectronics Reliability
A. C. T. Quah
D. Nagalingam
S. Moon
Edy Susanto
G. B. Ang
S.P. Neo
Jeffrey Lam
Zhihong Mai
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Citations (9)
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