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L. Rebohle

26

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151

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The inverse energy transfer between Ge nanocrystals and erbium in SiO2 and its dependence on microstructure

2011 Optical Materials
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Rare-earth implanted Si-based light emitters and their use for smart biosensor applications

2009 Vacuum
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Energy transfer from Gd to Er atoms in SiO2(GdEr)-MOSLEDs produced by ion implantation

2008 Materials Science and Engineering B-advanced Functional Solid-state Materials
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Microarrays of silicon-based light emitters for novel biosensor and lab-on-a-chip applications

2005 Optical Materials
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The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide-semiconductor structures

2005 Materials Science and Engineering B-advanced Functional Solid-state Materials
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IR Quantum dot detectors with miniband tunnel extraction

2004
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Defect formation in oxygen- and boron-implanted MOS structures after gamma irradiation

2003 Applied Physics A
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Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

2002 Microelectronics Reliability
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Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing

2001 Optical Materials
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Studies of visible photoluminescence from Ge+-ion implanted SiOxNy annealed under hydrostatic pressure

2001
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