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Renchun Tao

Peking University

8

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Effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 grown by molecular beam epitaxy

2021 CrystEngComm
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Impact of quantum dots on III-nitride lasers: a theoretical calculation on linewidth enhancement factors

2021 IEEE Journal of Selected Topics in Quantum Electronics
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Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

2021 Superlattices and Microstructures
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Strain effect on polarized optical properties of c-plane GaN and m-plane GaN

2009 Physica Status Solidi (a)
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CONDENSED MATTER: ELECTRONICSTRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Indium-Induced Effect on Polarized Electroluminescence from InGaN/GaN MQWs Light Emitting Diodes

2009 Chinese Physics Letters
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