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P Ranade
HIndex: 8
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Work function
Gate dielectric
Ion implantation
Electronic component
Permittivity
Annealing
X-ray crystallography
Process integration
Threshold voltage
International System of Units
Dielectric
Spectroscopy
Molybdenum
Transmission electron microscopy
Nitrogen
Argon
Etching
Degradation
Electron mobility
Lithography
Index term
CMOS
Electrode
Hydrogen
Silicon
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Work function
Gate dielectric
Ion implantation
Electronic component
Permittivity
Annealing
X-ray crystallography
Process integration
Threshold voltage
International System of Units
Dielectric
Spectroscopy
Molybdenum
Transmission electron microscopy
Nitrogen
Argon
Etching
Degradation
Electron mobility
Lithography
Index term
CMOS
Electrode
Hydrogen
Silicon
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P Ranade
Intel
12
P Ranade
University Of California
11
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