Login
中文
L F Eastman
HIndex: 42
Follow
Share
I Know This Author
Publication
Citation
Affiliation
Research Interests
Anything in here will be replaced on browsers that support the canvas element
Room temperature
Electron
Field-effect transistor
Epitaxy
Electron transport chain
Doping
Oscillation
High-electron-mobility transistor
Passivation
Band gap
Gallium arsenide
2DEG
Molecular beam epitaxy
Ohmic contact
Temperature
Quantum well
Fabrication
Breakdown voltage
Wide-bandgap semiconductor
Electric field
High frequency
Semiconductor device
Current density
Electron mobility
Voltage
Co-author Map
More
Mentorship
More
Papers
Ranking by:
Time
Paper rank
Research Area:
All Area
Room temperature
Electron
Field-effect transistor
Epitaxy
Electron transport chain
Doping
Oscillation
High-electron-mobility transistor
Passivation
Band gap
Gallium arsenide
2DEG
Molecular beam epitaxy
Ohmic contact
Temperature
Quantum well
Fabrication
Breakdown voltage
Wide-bandgap semiconductor
Electric field
High frequency
Semiconductor device
Current density
Electron mobility
Voltage
Paper Recommendation
×
Match this author profile with one of the following researchers:
Author Name
Affiliation
Papers
L F Eastman
Princeton University
741
×
Share to your followers
Submit